DTA114TE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built in resistor)

WILLAS
FM120-M+
DTA114TE THRU
1^P.0A^NS^PUR^DFA^igCE^itM^aO^lU^TN^rT^aSⁿCH^sO^isTT^tK^oY^rBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Featuresoptimize board space.
• Low power loss, high efficiency.
• ^{Pb-Free•pHaicgkhacguerreisntacvaapialbaibliltey, low forward voltage drop.}
RoHS pr^••od_GHu^iugc_aht_rdsfo_ruir^rngp_gea_focc^ark^poin^avg_ebrilc_vito_oyld^.tae_gs_eu_pf_rfi_ox_te”_cG_ti”_on.
Halogen•frUeletraprhoigdhu-cstpfeoerdpsawciktcinhigngc.ode suffix “H”
• Epoxy m^•e^Seⁱt^ls^icU^onL^e9^p4^itaV^xi-^a0^{l p}fl^la^am^nam^{r c}a^hb^ipil^,it^my ^era^tat^lin^sg^{ilicon junction.}
• Moisure ^•S^Le^en^as^dit^-i^fv^reit^ey ^pL^ae^rtv^se^ml 1^{eet environmental standards of}
x Built-in bia^Ms ^Ir^Le^-s^Si^Ts^Dto^-r¹s⁹⁵e⁰n⁰a^/b²l²e⁸the configuration of an inverter circuit
without c^•o^Rn^on^He^Sct^pin^rog^due^cx^tt^fe^or^rn^pa^al^ckinⁱⁿp^gu^ct^or^de^es^sis^ut^ffo^ixrs^"G(^"see equivalent circuit)
x The bias re^Hs^ai^ls^ogto^erⁿs^frc^eo^en^ps^rois^dt^uco^tf^foth^r i^pn^a-^cfi^klⁱm^ngr^ce^os^di^est^so^ur^fs^fixw^"Hit^"h complete
isolation ^Mto ^eal^clo^hw^anⁿegⁱa^ct^aiv^le^dbi^aas^ti^ang of the input. They also have the
advantag^•e^Eo^pf^oa^xylm^: o^Us^Lt⁹c⁴o^-Vm⁰p^rl^ae^tt^ee^dly^flae^mlim^{e r}in^eta^at^rin^dagⁿp^t arasitic effects
x Only the _•o_Cn/_ao_sf_ef c_{: M}on_od_ldit_eio_dn_ps_lan_ste_ice_,d_St_Oo_Db_-e₁₂s₃e_Ht for operation, making
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Package outline
SOD-123H
SOT-523 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
.067(1.⁰7^.00⁵)^6(1.4)
.059(1.50)
0.031(0.8) Typ.
.043(1.10)
.035(0.90)
0.040(1.0)
0.024(0.6)
.014(0.35)
.010(0.25)0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Absolute Ma^•x^Mim^ouuⁿm^tinR^ga^Pt^oi^sn^itg^ios^{n : Any}
Pa^•r^Wam^eige^hte^{t :}r^ApproximatedS⁰y^.0m¹¹bo^grl^am Value
Unit
Collector-Base Voltage
V_CBO
-50
V
Collector-Emitter Voltage ^{MAXIMUM RAT}V^IN_CE^G_O ^{S AND EL}-5^E0^{CTRICAL CH}V^{ARACTERISTICS}
Emitter-BRaasetinvgosltaagt e25℃ ambient temperaturVe_EBu_Onless otherwis-e5 specified.
V
Collector_SC_inu_grr_le_en_pt-_hC_ao_sn_etin_hu_ao_lfu_ws_{ave, 60Hz, resistiv}I_{Ce of inductive l}-_o1_a0_d0_.
mA
Collector_FD_oi_rss_ci_ap_pa_atio_cin_{tive load, derate current by}P_2C0%
150
mW
Junction Temperature Range _RATINGS
T_J
Storage MTeamrkpinegraCtuodree Range
T_STG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
-5_S5_Y~_M1_B5_O0_{L FM120-MH FM}к_{130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M}
-55~150
12
к₁₃
14
15
16
18
10
115 120
VRRM
20
30
40
50
60 ^.0088⁽0^0.20) 100
150
200
VRMS
14
21
28
35
42 ^.0045⁽6^0.10) 70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Electrical Characteristics
Sym ^{Peak Forward Surg}P^ea^Cr^ua^rrm^ente⁸t^.e³ r^{ms single half sine}M^-wi^an^ve IFTSyMp Max Unit
.004(0.10)MAX₃. ₀
V_(BR)CB^s_TO^u_y^p_p^e_ic^ri_a^C(m_IlC^op_T=l^ol_h-e^s_5e^ec0_r^dt_m^ouorA_a^-n_l^B, _R^r_Ia^a_Ee^s=te_s^e0d_is)B^l_t^o_a^rae_n^da_c^k_e^(JdE₍^o_N^Dw_o^En_te^CV₂^mo₎^elttahgoed)
-50
---
RΘJA
---
V
40
V_(BR)CET_Oypica^C(Il_C^oJ_=lu^l-en_1cc_mtt^oi_Ao^r-n_,EIC_B^m=a^i0tp^t)eac^r i^Bta^rn^ec^ae^kd(N^owotⁿe ^V1)^oltage
V_(BR)EB^OS_{O tpoerarag}^E(t_IeiE^mn_=Tg^i-t_e5t^Te_m0^eru-_pm^BA_ep^a_r,ae^sI_Ctr^e_ua=rt^B0_eu)r^rReea_aR^k_na^d_gn^o_eg^{wen Voltage}
-50
C-J--
TJ
-5
---
TSTG
---
V
-55 to +125
---
V
120 _.014(0.35)
-55 to +150
.006(0.15)
- 65 to +175
I_CBO
I_EBO
Collector Cut-off Current
E(Vm^CBit=te-5r ^{0CVu,t-IoE=ffC0CH)} u^Ar^Rre^An^Ct ^TERISTICS
Maxim_(Vum_EB=F_-o₄r_Vw_,a_Ir_Cd₌V₀₎oltage at 1.0A DC
---
---
-0.5
uA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
---
VF^---
-0.5
uA _0.50
Dim₀e_.n₇s₀ions in inches a_0.n₈d₅(millimeters₀)_.9
0.92
V_C^h_EF(Esat^RM₎ ^{aatxeidmCD((VIDu}_C^ComC₌^{ClEl-Ce=1ABcu-0vl5toromerVcrer}_A-^k,anEiIg_,^ntCme_I^g=G_B^{i=-RVta1t-eeoi1mnrvl}_m^tAeaSArg)ase_)t^{euCrautirorennVt oalttag@@eTT}
A=25₁℃₀₀
A=125℃
---
I²R⁵⁰
---
600
-0.3
---
V
0.5
10
R₁ ^NOTESIn^: put Resistor
7
10
13
K¡
f_T
1-
2-
Mea_Ts_ru_are_nd_sia_tit_o1_nM_FH_reZ_qa_un_ed_nca_ypplied reverse voltage
The⁽rm^VCaEl⁼R^-e¹s⁰is^Vta^, n^ICc⁼e^-F⁵r^mom^A,J^fu⁼n¹c⁰ti⁰o^Mn t^Ho^zA⁾mbient
of 4.0
---
VDC.
250
---
MHz
*Marking: 94
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.