DTA114TCA Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Digital transistors (built-in resistors)

WILLAS
FM120-M+
DTA114TCATHRU
PNP Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Features• Low profile surface mounted application in order to
optimize board space.
• ^{Pb-Fre••e}_HL^poigwa_h^cpcok_uw^a_rre^g_ern^eltocsis_asp, ^a_ahib^vgiahlitieyl_,^afflib_ocwi^lee_{fnocryw. ard voltage drop.}
RoHS p• rHoigdhuscutrgfoercpapaacbkiliintyg. code suffix ”G”
Haloge^•n^Gf^ure^are^drpⁱⁿr^go^fd^ou^{r o}c^vt^ef^ro^vr^olp^taa^gc^ek^pin^rog^tec^cto^iodⁿe^. suffix “H”
• Epoxy m^{• U}ee^ltrts^{a h}U^igL^h9^-s4^peV^e-^d0^sf^wla^itm^chmⁱⁿa^gb^. ility rating
•
x
B^Mu^oilⁱt^s-^uin^reb^•• i^SLSMa^eies_IlaLi^ncr^d-oe^s_S-n^ifs_T^trii^eeDvs^epit_-^to^i1yptr^a9as^Lx5riet0e^asv₀n^lmepa_/2l^leb^a21elⁿ⁸e^taertⁿh^cve^hiripc^o,o^nmn^mf^eeig^tnau^tlar^sa^lisltⁱi^tco^aon^nndo^jauf^rnda^csn^tiooi^fnⁿv^. erter circuit
without _•c_Ron_oHn_Sec_pt_ri_on_dg_uce_tx_fote_r r_pn_aa_ckl _ii_nn_gp_cu_ot_dr_ee_ss_ui_fs_fit_xo_"r_Gs_"(see equivalent circuit)
x The bias _Hre_as_loi_gs_eto_nr_fs_rec_eo_pn_ros_dis_ut_cto_fof _rth_pi_an_c-_kf_ii_nlm_{g c}r_oe_ds_eis_suto_ffr_ixs_"w_H"ith complete
isolation_Mto_ea_cll_how_anne_ig_ca_ati_lve_db_aia_ts_aing of the input. They also have the
advantage of almost completely eliminating parasitic effects
x Only the^• o^En^po/o^xf^yf ^:c^Uo^Ln⁹d⁴it^-i^Vo⁰ns^ran^tee^de^fd^lat^mo^eb^re^ets^ae^rdt ^afoⁿr^t operation, making
device d^•e^Cs^aig^sn^{e :}e^Ma^os^ly^{ded plastic, SOD-123H}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
SOT-23 ^0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.122(3.10)
0.071(1.8)
.106(2.70) 0.056(1.4)
0.031(0.8) Typ.
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Absolute Maximum Ra^Mt^ein^thg^os^{d 2026}
P^•a^Pr^oa^lm^are^itt^ye^:r^{Indicated by ca}S^ty^hm^odb^eo^bl^and Value
Unit
Dimensions in inches and (millimeters)
Collector-Base^•V^Molt^oa^ugⁿe^{ting Position : Any} V_CBO
-50
V
Collector-Emitte_•r_WVo_el_it_ga_hge_{t : Approximated 0.0}V_1C1EOgram
-50
V
Emitter-Base voltage
V_EBO
-5
V
Collector Current-Contin_Muo_Aus_{XIMUM RATIN}I_{GC S AND EL}-_E10_C0_{TRICAL CH}m_AA_RACTERISTICS
Collecto_Rr _aD_ti_is_ns_gi_spa_at_tio₂n_{5℃ ambient temperature} P_{unC less otherwise}20_s0_pecified.
mW
JunctionSTinegmleppehraatsuerehRaalfnwgaeve, 60Hz, resistiveT_Jof inductive -l5o5a~d1. 50
к
Storage^FT^oe^rm^cap^pe^ara^ctⁱu^tir^ve^eR^loa^an^dg^,e^{derate current by}T²_S⁰_TG^%
-55~150
к
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-M_.0H₀F₈M₍₀1_.210₀0₎ -MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18 _.003(0.1₀0₈₎
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
Electrical Characteristics
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
S_Vy_(Bm_{R)CMMBOaaxxiimmuuC(ImmCo=lADl-e5vCc0etourBarAl-goB,ecIak}P_EFis=noa_e0grr_)wBVa_aroem_rldatake_Rgdt_eeoe_cwr_{tinfieVdoCltaurgreent}
Min Typ
VDC
-50
IO ^---
Max Unit
20
30
40
---
V
50
60
80
.004(0.10)MAX.
1.0
100
150
200
V_{(BR)CPEeOak Fo}^C(I_rCw^o=l_a^l-e_r1d^cmt_S^oA_u^r-_r,g^EI_eB^m=_C^i0t_u^t)e_rr^r_e^B_nt^re_8.^a₃^k_m^do_s^w_sⁿ_ing^V_le^ol_h^ta_a^g_lf^e_sine-w-_a5_v0_e
V_(BR)E^s_B^u_O^perimE(p_IE^mo₌^si-et5tde0ro_u-^nBAar_,^asIt_C^ee=dB0lo_)re^{aadk(dJEoDwEnCVmoletathgoed)}
-5
---
IFSM
---
---
---
V
V
I_CBO^{TTyyppiiccaallC(T}_VJ^o_uhC^l_nB^ele=_cr^cmt_-i5to^oa_0n^rl_V^RCC,eauIs_Ep^t-=iaso0_ct^fa_)fitna^Ccnuecr_e^r(eN(n_No^ttoete2)1)
RΘJA
---
CJ ^---
-0.5
uA
30
.020(0.50)
40 ^.012(0.30)
120
Ih_EFBEO^{OStpoeraragteiE(D(n}_VVT^mg_CECeBE^iT_Ctm==t^ee-u-_pm45rreVrVC^p_{er,ae,untrIIttuC}^a_C^-==G_r^oteu_0-faf^r_1)ReiCmnaR^uA_n^rag_)r^ne_eg^net
---
100
V_{CE(sMat)aximu}^C(_mIC^o=l_F^l-e1_o^c_r0tw^om_a^rA-_r^E_d,mIVB^Ci=_o^tHt_l-et1aA^rm_gR^S_eA^Aa_a)t^Cu_t ^Tr₁^aE.0tRi_A^oInSDTV_CI^oCltSage
---
R₁
Input Resistor
7
f_T
Maximu_Tm_raA_nsv_ie_tir_oa_nge_FrR_ee_qv_ue_er_nse_cyCurrent at @T
Rated D(VC_CEB=lo-1c0kiVn,gIV_C=o-l5tamgeA, f=100MHz)@T
A=25℃
A=125℃^---
TJ _---
-0.5 ^{-55 to} u⁺A¹²⁵
Dimensions in inches_-5an₅d_to(m₊il₁li₅m₀eters)
TSTG
250
600
---
- 65 to +175
SYMB_-O_--L
VF
10
FM120_--₀M_.3H
13
FM130-M_VH FM140-MH
K¡^0.50
FM150-MH FM^S1^u6^g0-^gM^eH^sF^tM^e1^d80-^SM^oH^lF^dM^e1^r100-MH
0.70 ^{Pad Layo}0^u.8^t 5
FM1150-MH
0.9
FM1200-MH
0.92
IR₂₅₀
---
MHz
.0301 .5
.800
10
.035
NOTES:
.900
*Mark¹i^-n^Mg^e:^a9^su4^{red at 1 MHZ and applied reverse voltage of 4.0 VDC.}
2- Thermal Resistance From Junction to Ambient
.079
2.000
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.