DTA114EE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built-in resistors)

WILLAS
FM120-M+
DTA114EE THRU
1^P.0A^NS^PUR^DFA^igCE^itM^aO^lU^TN^rT^aSⁿCH^sO^isTT^tK^oY^rBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Features• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
xxx
Epitaxi^•al^HP^igla^hn^sa^ur^rgD^ei^ce^aC^pao^bn^ils^itt^yru^. ction
Untrl S^•m^Ga^ull^aS^rdu^rrⁱⁿfa^gc^fe^orM^ovo^eu^rn^vot ^lP^taa^gc^ek^pa^rg^oe^tection.
Built-In^• B^Ui^la^{t r}s^ain^hg^{i g}R^{h -}e^ss^pi^es^eto^d r^ss^{w i t c h i n g .}
• _Pb-Fre^•_e^S_pⁱ_a^lic_c^o_kⁿ_a^e_g^p_e^it_i^a_s^xi_a^a_v^l _a^p_i^la_laⁿ_b^a_l^r_e^{chip, metal silicon junction.}
RoHS p^•r^LMo^ed_IaLu^d-c_S-t^fTrf^eo_Der_-1p^p9a^a5rc^t0k^s0in^m/g_2e2ec_8to^edⁿe^vis^ru^onff^mix^e”ⁿG^ta” ^{l standards of}
Haloge•n^Rfr^oe^He^Sp^pr^ro^dd^uu^cc^tt^fofo^r r^pap^ca^kcⁱⁿk^gin^cg^odc^eo^sd^ue^ffis^xu^"Gffi^"x “H”
•
•
EMpooisxuyr_Mem^H_See^aee^l_c^otn^gs_h^e_sⁿUi_ati^fLv^r_n^e_it^e9_iyc4^p_L^r_a^oVe^d_lv-^u0e_d^c_l^tf_al^f_1a^o_t^rm_a^pm^aca^kib^ngilit^cy^odr^eat^si^un^fg^{fix "H"}
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
SOT-523 ^0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
Absolute •mTaexrmiminualms :Pralattiendgtser@min2a5ls_к, solderable per MIL-STD-750,
.014(0.35)
Symbol
M_Pae_rt_ah_mod_et2_e0_r 26
Min Typ Max Unit
.010(0.25)
V_CC
•^SuP^po^pl^la^yr^Vit^oy^lt:^aI^gn^edicated by cathode band ^---
-50 ^---
V
I_C
Collector current
---
-50 -100 mA
V_IN
•_InM_po_utu_vn_ot_li_tan_gg_ePosition : Any
-40
--- 10
V
.043_D(_im1._e1_ns0_io) _{ns in inches and (millimeters)}
.035(0.90)
P_d
•^PW^owe^eig^r h^dt^is:^sA^ipp^ap^tioroⁿximated 0.011 gram ^{--- 150 ---}
mW
T_j
Junction temperature
--- 150 ---
ć
T_stg
Storage _Mtem_Ap_Xe_Ir_Matu_Ure_{M RATINGS AND}-5_E5_LECT---_RICA15_L0_{CHAćRACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Electrical
Characteristics @
RATINGS
25_к
Symbol
Parameter
VV_I^{MMI((oonfaaf))rxkiminugmCInoRpdeuectuvroreltnatgPee}((V^aV_O^kC=^CR-^=0e-.^v53eVVr,s, ^eIIOO=V=^-o-^11lt00^a0mg­eAA)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Min Typ Max Unit
-0.5 --- ^{12--- 13} V ¹⁴
15
16
18
10
115 120
---^VRRM --- ²⁰-3.0 ³⁰ V ⁴⁰
50
60
80
100
150
200
V_{O(Mona) ximum}Ou_Rt_Mpu_St v_Vo_ol_lt_ta_ag_ge_e (I_O=-10mA,I_i=-0.5mA)
---_VRMS --- 14-0.3 21 V 28
35
42
56
70
105
140
M^II aximum^InD^pC^utB^clo^uc^rrk^einⁿg^{t (}V^Vo^I=lt^-a⁵g^Ve⁾
I_O(off)
Output current (V_CC=-50V, V_I=0)
---- ---
---^VDC ----
20^--00..858
30_­^mAA
40
50
60
80
100
150
200
G^M_I^aximumD^AC^vec^ru^ar^gren^Ft^og^ra^win^ar(^dV^R_O=^e-^c5^tiV^fie, ^dI_O^C=-^u5^rrm^eA^nt)
30 ^IO ---
R₁
Input resistance
7
10
R₂^P/R^ea₁^{k Forw}R^ae^rdsi^Ss^uta^rgn^ece^Cura^rrt^eio^{nt 8.3 ms single half sine-wave}0.8 IFSM 1.0
---
13
K_¡
0.2
1.0
.008(0.20)
30^.004(0.10)
s_TfTu_yp_pe_icri_am_l p_To_hT(s_Vere_a2rd_mn=o_sa-n_1ilti0Rr_oa_Vente_,sfd_iIrs2el_t=o_aqa_5nud_mcee(_nAJ_cE_(,NyD_f=oE_1teC₀₀₂m_)Me_Hth_zo₎d)
--- 250
RΘJA
--- MHz
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
.004(0.10)MA^-X⁶.^{5 to +175}
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
M^VFarking:14
0.50
IR
0.70
0.85
0.5^.014(0.35)
10 _.006(0.15)
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.