DS521-30WB Datasheet, PDF (1/2 Pages) WILLAS ELECTRONIC CORP – WBFBP-02C Plastic-Encapsulate Diodes

WILLAS
FM120-M+
DS521-30WTBHRU
WBFBP-02C Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Schottky^• B^Baa^tr^cr^hie^pr^roD^ci^eo^sd^se^{design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
DESCRIP_• T_LoIO_w N_{profile surface mounted application in order to}
Silicon Epi^ota^ptx^imiaⁱl^zeP^bla^on^aa^rdr^space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
FEATUR^•E^HS^{igh surge capability.}
z S^••m_UGa_lutl_ral_ars^dhu^riigr^nhf^ga_-sfc^ope^reoem^vdeo_sru^vwon_itlt_cti^ahn^gig_negpt_.y^rop^te^ection.
z H•igShilicroenliaepbiitlaitxyial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
APPLICA• TRIoOHSNproduct for packing code suffix "G"
High speed^Has^low^geitⁿc^fh^rein^eg^prf^oo^dr^ucd^t e^fot^re^pc^at^cio^kin^{ng code suffix "H"}
Mechanical data
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
• Epoxy : UL94-V0 rated flame retardant
DVD-ROM, Note Book PC, etc.)
• Case : Molded plastic, SOD-123H
,
Pb-Free^{• T}p^era^mcⁱⁿk^aa^lsg^:Pe^lai^tes^d a^tev^rmaⁱiⁿl^aa^lsb^, l^se^{olderable per MIL-STD-750}
Method 2026
RoHS
p_•r_Po_od_lau_rc_ityt
for packing code suffix
: Indicated by cathode band
”G”
Halogen• MfroeuentinpgroPodsuiticotn f:oAnrypacking code suffix “H”
Package outline
WBFBP-_S0_O2_DC_-123H
(1.0×0.6×0.5)
unit: mm
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MARKING: F _{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Ma_Mx_ai_rm_kinu_gm_CodR_eatings and Electrical Characteristics,₁₂Single₁₃Diode₁@₄ Ta=2₁₅5℃ ₁₆
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 V
Maximum RMS^PV^ao^rlt^aag^me^eter
Sym_VRb_Mo_Sl ₁₄
21
28 ^Lim3ⁱ5^t
42
56
70 ^Unit 105
140 ^V
Maximum DC Blocking Voltage
DC_Mar_xe_imve_umrs_Ae_vv_ero_al_gt_eag_Foe_{rward Rectified Current}
VDC
20
30
40
50
60
80
100
150
200 ^V
V_RIO
30
V
1.0
A
MPeeaank FreorcwtaifrdyiSnugrgecCuurrrreenntt8.3 ms single half sine-wave I_OIFSM
superimposed on rated load (JEDEC method)
Pe_Ta_ypk_icf_ao_l r_Tw_hea_rr_md_als_Ru_er_sg_ise_tac_nu_cerr₍e_Nn_ott_{e 2)}
I_FSRMΘJA
100
30
mA
A
1
40
A
℃
Typical Junction Capacitance (Note 1)
P_Oow_pee_rar_tid_ngis_Ts_ei_mpa_peti_ro_atn_{ure Range}
Storage Temperature Range
Thermal Resistance from
Junction to Ambie^Cn^Ht^{ARACTERISTICS}
Maximum Forward Voltage at 1.0A DC
CJ
PDTJ
TSTG
120
-55 to +125
100
-55 to +15_m0 _W
- 65 to +175
RθJA
1000
℃/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
JuMnacxtimiounmtAevmerpageeraRteuvreerse Current at @T A=25℃ T_{j IR}
Rated DC Blocking Voltage
@T A=125℃
125
0.5
℃
m
10
S^Nto^Or^Ta^Eg^Se^: temperature
T_stg
-55~+150
℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Ele^2-c^Tt^hr^ei^rc^ma^all^RR^esa^ist^tain^ncg^e s^Fro@^m T^Jua^nc=^ti2^on5^t℃^{o Ambient}
Parameter
Symbol Min
Typ Max Unit
Conditions
Forward voltage
V_F
0.35
V
I_F=10mA
Rev₂er₀s₁e ₂cu_-0rr₆ent
I_R
10
μA
WILLA^VRS⁼¹E^0VLECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.