DAN222M Datasheet, PDF (1/2 Pages) Rohm – Switching diode

WILLAS
SOT-723 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
DAN222M _THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SWITCHINopGtimDizIeObDoEard space.
• Low power loss, high efficiency.
FEATUR^• E^HiS^{gh current capability, low forward voltage drop.}
SOD-123H
SOT-723 0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z Ultra ^••S_GHm^iuga_ahrll_dsruS_irnu^ggerf_fa_ocarc^poe^avebM_rilvo^itoyu_l.tn_at_gin_e g_prT_oty_ep_ce_tion.
z Ultra •HUigltrha Shipgeh-esdpeSewd sitwcihtcinhigngA. pplications
z High ^•R^Se^illⁱi^ca^obⁿil^eit^py^{itaxial planar chip, metal silicon junction.}
z Pb-Fr^•e^LMe^eIaLp^d-a_S-c^fTrk^eDa^e-g_1p9e^a5rti_0ss_0ma_/2ev_2ea_8ti^elaⁿb^vil^re^{onmental standards of}
0.071(1.8)
0.056(1.4)
RoHS^{• R}p^oro^Hd^Su^pc^rot ^dfo^ucr^tp^foa^rc^pk^ai^cn^kg^ingco^cod^de^e s^suu^ff^ff^ixix^"G”G^" ”
Haloge^Hn^alf^or^ge^eeⁿp^frr^eo^ed^pu^roc^dt^uf^co^tr^fop^ra^pc^ak^ckinⁱⁿg^{g c}c^oo^dd^ee^sus^fu^fixff^"ix^H"“H”
z
Mechanical data
Moisture Sensitivity Level 1
• Epoxy : UL94-V0 rated flame retardant
MARKIN^•G^C:^aN^{se : Molded plastic, SOD-123H}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{Method 2026}
r MAXIMU_•M_PoR_laA_riT_tyIN_{: In}G_dS_ica(_teT_da=_by2_c5_a℃_th
unless
ode band
otherwise
noted
)
Sym_•bo_Ml_{ounting Position : Any}
Parameter
a _{VRR•MWeight : ApPperaokxiRmeavteedrs0e.0V1o1ltgargaem}
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Value
Unit
80
V
in ^{VRWM MAWXIoMrkUinMg PReAaTkIRNeGveSrsAeNVDoltEagLeECTRICAL CHARACTERISTIC8S0}
V
Ra_Vtin_Rg_(Rs_Ma_St₎ 25℃ amb_Rie_Mn_St te_Rm_ep_ve_er_ra_st_eur_Ve _ou_ln_tale_gs_es otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For ca^IOpacitive load, ^Cde^orⁿa^ttⁱeⁿc^uu^or^ure^sn^Ft b^oy^rw2^a0%^{rd Current}
56
V
100
mA
lim ^IFM
P^Rea^Ak^TIF^No^Gr^Sward Current
SYMBOL FM120-MH FM130-MH FM140-MH FM₃15₀0₀-MH FM160-MH FM180-MmH AFM1100-MH FM1150-MH FM1200-MH UN
Marking Code
12
13
14
15
16
Maxim^IFu^Sm^M Recurrent P^Nea^okⁿR^-Rev^ee^prs^ee^tiV^tivo^elta^Pge^{eak Forward}V^SRR^uM^{rge Cu}2^r0^{rent (t=}3¹0^µs) 40
50⁴
60
18
10
80 ^A 100
115 120
150
200 Vo
e _{MaximPumD RMS VoltagPeower Dissipation}
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
r _RθJA
Thermal Resistance from Junction to Ambient
Maximum Average Forward Rectified Current
IO
T_j
Junction Temperature
P _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
28
3₁5₅₀ 42
56 _mW 70
40
50
60
80
100
833
℃/W
1.0
150
℃
30
105
140 ^Vo
150
200 ^Vo
Am
Am
superi_Tm_sp_to_gsed on rated lSoatodr(aJEgDeETCemmeptheorda)ture
-55~+150
℃
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
EL_TE_ypC_icT_alR_JuIC_ncA_tioL_{n C}C_aH_paA_citR_anA_ceC_(NT_oE_teR₁I₎STICS(T_a=25℃_CJunless otherwise specified)
120
P
Operating Temperature Range
Parameter
Storage Temperature Range
Symbol
TJ
TSTG
-55 to +125
Test conditions
-55 to +150
M_{- 6}in₅
to
Typ
+175
Max
Unit
℃
℃
Reverse voltage
= V_(BR) I_R 100uA
80
V
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Rev_Me_ars_xie_muc_mur_Fr_oe_rn_wt_{ard V}= _{oltage at 1.0A DC} IR V_VR_F 70V
0.50
0.70
0.85 ^0.1
0^µ.^A9
0.92 Vo
Forw^Maa^xrⁱd^muv^mol^Ata^veg^re^{age Re}= ^{verse Current at @}V^TF ^A=25℃ IFIR 100mA
Rated DC Blocking Voltage
@T A=125℃
0.5
1.2
V
mA
10
Total capacitance
NOTES:
= = C_tot V_R 6V,f 1MHz
Rev1e- rMseeasruerecdoavte1rMyHtZimaned applied reverse votrlrtage of 4.0 VDCI.F= IR=5mA, VR=6V,RL=50Ω
3.5
pF
4
ns
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.