C1815 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

WILLAS
SOT-23 Plastic-Encap sulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
&115 THRU
FM1200-
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
Package outline
TRANSISTO_•R_Lboe(_wtN^{t ep}P^rrN^roef)^vi _{leerssuerlfeaackeamgoeucnutrerde} ^natpapnl _{idc at} ^ht _{ieornmianlorredsei} ^{sr ttaon c e .}
SOT-2^SO3 ^D-123H
FEATURES ^{optimize board space.}
• Low power loss, high efficiency.
Power d_•i_Hss_igi_hp_ca_ut_ri_ro_en_{nt capability, low forward voltage drop.}
Pb-Free pa•cHkiaghgseurigse acavpaaiblialitby.le
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
RoHS produ^• c^Gt^uf^ao^rdr^ripⁿa^g c^fok^ri^on^vg^erc^voo^ld^tae^ges^pu^roff^ti^ex^ct”^ioG^n.”
• Ultra high-speed switching.
Halogen fre•eSpilircoodn uepcittafxoiarl pplaancakrinchgipc, modeteal ssiulicffoixn j“uHnc”tion.
• Lead-free parts meet environmental standards of
MARKING : HMFIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MAXIMUM RAHTaIlNogGenSfre(Te ap=ro2d5uc℃t four npalecksinsg ocotdheesruwffiixs"eH"noted)
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
Mechanical data
Symbol _{• Epoxy : UL94-V0 rated flame reta}P_ra_dr_aa_nm_t eter
Value
Unit 0.040(1.0)
0.024(0.6)
V_CBO
V_CEO
• Case^C:^oM^llo^el^cd^te^od^r-p^Bla^as^sti^ec,^VS^oO^ltD^a-^g1^e23H
•
TermCinoalllesc:tPolra-tEemd ittetermr Vinoaltlsa,gseolderable
per
,
MIL-STD-750
60
0.031(0.8) Typ.
50
V
0.031(0.8) Typ.
V
V_EBO
I_C
P_C
T_j
T_stg
Emitte^Mr-B^eta^hs^oe^dV²o⁰l²ta⁶ge
5
V
• Polarity : Indicated by cathode band
Collector Current -Continuous
• Mounting Position : Any
Collector Power Dissipation
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
150
mA
200
mW
Junction Temperature
150
℃
St^Mor^Aag^Xe^IMTe^Um^Mpe^Rra^Atu^Tr^Ie^{NGS AND ELECTRICAL CHARACTERISTICS}-55-150
℃
Ratings at 25℃ ambient temperature unless otherwise specified.
ELECTR^SICⁱⁿA^gleL^pC^haH^seA^hR^alA^{f w}C^aT^veE^, R⁶⁰I^HS^zT^, I^reC^sS^isti(^vT^ea^o=^f 2ⁱⁿ5^du℃^ctivu^en^lole^ads^.s otherwise specified)
For capacitive load, derate current by 20%
Parameter ^RATINGS
Marking Code
CollectMoar-xbimausme RberceuarrkedntoPwenakvRoelvtaergsee Voltage
Collect^Mo^ar-^xe^imm^ui^mtt^Rer^Mb^Sr^Ve^oa^ltk^ad^geown voltage
Maximum DC Blocking Voltage
CollectMoraxcimuut-mofAfvceurargreeFnotrward Rectified Current
Symb^So^Yl^{MBOL F}T^Me¹s²t^0-Mc^Ho^Fn^Md¹i³t⁰i^-o^Mn^Hs^{FM140-MH FM1}M⁵⁰i^-n^{MH FM160}T^-My^Hp^FM180-MM^H a^Fx^M1100-MU^Hn^Fit^{M1150-MH FM120}
12
13
14
15
16
18
10
115 120
V_(BR)CBVORRM I_C== 1200uA, I3_E0 0
40
5060 60
80
100 V 150
200
V_(BR)CE^V_O^RMS I= _C= 0¹.⁴1mA, I_B²¹0
28
VDC
20
30
40
35₅₀
42
50
60
56
70 _V 105
140
80
100
150
200
I_{CBO I}= _O V_CB=60V, I_E 0
1.0
0.1
uA
Collect^Po^er^akcu^Fot^r-^wo^af^rf^dc^Su^ur^rgr^een^Ct^{urrent 8.3 ms single half sine-wav}I^eCEO _IFS= _M VCE=50V, IB 0
superimposed on rated load (JEDEC method)
Emitter_Tyc_pu_ict_a-o_{l T}ff_hec_ru_mr_ar_le_Rn_et_{sistance (Note 2)}
I_{EBO R}= _ΘJA V_EB= 5V, I_C 0
DC cur^Tre^ypn^ict^ag^l a^Juin^{nction Capacitance (Note 1)}
Operating Temperature Range
h_FE
CJ
TJ
V_CE= 6V, I_-C5=_{5 t}2_om₊A₁₂₅
Collect^So^tr^o-^re^agm^ei^Ttt^ee^mr^ps^ea^rat^tu^ur^reat^Rio^ann^gevoltage
V_CE(sat^T) ^STG I_C=100mA, I_B= 10mA
30
0.1
uA
40
0.1
uA
130
120
4_-50₅0 _{to +150}
- 65 to +175 _0.25
V
Base-emitter saturation_CHv_Ao_Rlt_Aa_Cg_Te_ERISTICS
V_BE(saSt)_YMBOLI_CF=M112000-MmHAF,MI1_B3=0-1M0HmFMA140-MH FM150-MH FM160-MH FM180-MH1FM1100-MH VFM1150-MH F_M1200
Maximum Forward Voltage at 1.0A DC
TransitMioanximfruemquAevenrcagye Reverse Current at @T A=25℃ fT
Rated DC Blocking Voltage
@T A=125℃
VF
IR
V_CE=10V, I_C= 1m⁰A^.5, ⁰
f=30MHz
0.70
0.85
0.9
0.9
80
0.5
MHz
10
NOTES:
CLAS₁S_{- M}IF_eI_aC_suA_reT_{d a}IO_{t 1}N_MHO_{Z a}F_ndh_{apFpElied reverse voltage of 4.0 VDC.}
Rank 2- Thermal Resistance From Junction to Ambient L
Range
130-200
H
200-400
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.