BSS84WT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – Small Signal MOSFET 115 mA, 60 V

WILLAS
P_1.o_0Aw_SUe_Rr_FAM_CEO_MOS_UF_NTE_ST_{CHO1T3TK0Y B}m_ARA_RIEm_{R R}p_Es_CT,_IF5_IE0_RSV_-20o_Vl_- t₂₀s_0V
SOD-123+ PACKAGE
FM120-M+
BSS84WT^T1^HRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
•
op_Ptim_–iz_Ce b_ho_aar_nd s_npa_ec_le._SOT–323
Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
• Hig_Th_hs_eur_sg_ee c_map_ina_ib_ai_tli_uty_r._{e surface mount MOSFETs reduce power loss}
• G_cu_oa_nr_sdr_ein_rvg_efo_er o_nv_ee_rr_gv_yo_,lta_mg_ae_kp_inro_gtec_thti_io_sn._{device ideal for use in small power}
• U_mltr_aa_nh_aig_gh_e-_msp_ee_ne_td_cs_iw_rci_utc_ih_tri_yn_.g_T. _{ypical applications are dc–dc converters, load}
• S_sil_wic_io_tcn_he_ip_ni_gta_,xi_pa_ol p_wla_en_rar_mch_ai_np,_am_geet_mal_es_nil_tico_inn ju_pn_oc_rti_to_an_b._{le and battery–powered}
• LM_peI_raL_od-_{dS-fuTrecDet-s1p9s}a5_urt0_cs0_hm/2_ae2_se8t_ce_on_mvir_po_un_tm_ere_sn_,ta_pl_rs_inta_ten_rd_sa_,rd_cs_elo_luf _{lar and cordless telephones.}
• R•oHESnperordguyctEfoffricpiaecnkitng code suffix "G"
1
H_•alo_Mge_inn_if_are_tue_rp_ero_Sdu_Oc_Tt f_–or₃p₂a₃ck_Sin_ug_rc_faod_ce_es_Muff_oix_u"_nH_t"_{Package Saves Board Space}
M_•ec_Ph_ba_-Fn_rei_eca_pal_cd_ka_agt_ea _{is available}
• Epo_Rxy_o:_HU_SL9_p4_r-_oV_d0_ur_ca_tte_fod_rfl_pa_am_ce_kr_ie_nt_gar_cd_oa_dn_et _{suffix ”G”}
• Cas_He _a: M_loo_gl_ede_nd_frp_ela_es_ptic_ro, S_dO_ucD_t-_f1_o2_r3_pH_{acking code suffix “H”}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
0.012(0.3) Typ.
0.071(1.8)
0.056(13.4)
2
SOT –0.304203(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
THERMAL CHARACTERISTICS
• Mounting Position : Any
Dimensions in inches and (millimeters)
Marking Diagram
• Weight : Approx^Ci^hm^aa^rt^ae^cd^te0^r.^is0^t1^ic1 gram
Symbol Max Unit
Total Device Dissipation FR–5 Board
P_D
225
mW
(NMoteA3X.)IMT_AU=M25R°CATINGS AND ELECTRICAL CH1.A8 RACmTWE/°RCISTICS
Ratings at 25℃^Dera^am^tebi^ae^bn^ot^vte^em²⁵p^°e^Crature unless otherwise specified.
PD
Single phas^Te^hh^ea^rl^mf w^ala^Rve^e,^s6^is0^taHⁿz^c,^er^,e^Js^uisⁿti^cv^te^iooⁿf^ti^ond^Au^mc^btiⁱv^ee^ntload. ^RθJA
556 °C/W
For capacitiv_Te_otl_ao_la_Dd_e, _vd_ie_cera_Dte_isc_su_iprr_ae_tn_iot_nby 20%
P_D
300
mW
Alumina_RS_Au_Tb_Is_Nt_Gra_Ste,(Note
Derate above 25°C
4.)
TA
=
25°C_SYMBOL
FM120-MH
FM130-MH^mF^WM1^/4^°C0-MH
2.4
FM150-MH
FM160-MH
FM1_P80_D-MH₌F_DM_e11_v0_i0_c-_eMH_CF_oM_d11_e50-MH FM1200-MH
UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Re^Tcu^hr^ere^rmnt^aP^l e^Ra^ek^sR^ise^tavⁿer^cs^ee^, V^Juoⁿlta^cg^tie^{on to Ambient}VRRM ^RθJA 20 ⁴¹3⁷0 ^°C/4^W0
50
60
80^{M = Mo}1ⁿ00^{th Code}150
200 Volts
Maximum RMJSunVcotlitoangeand Storage Temperature
VRMST_J, T_stg14 –o552t1o
°C28
35
42
Maximum DC Blocking Voltage
VDC
20 ⁺¹⁵3⁰0
40
50
60
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0_{ORDERING INFORMATION}
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
IFSM
RΘJA
D3e0vice
BSS₄8₀4WT1
Package
Shipping
SOT-323 3000/Tape&Reel
Amps
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating TeMmApXerIaMtuUreMRaRnAgeTINGS (TJ = 25^°C unless ToJtherwise noted^-)^{55 to +125}
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
Rating
Symbol Value Unit
3 Drain
Drain^C–^Hto^A–^RS^Ao^Cu^Trc^Ee^RV^ISo^Tlt^Ia^Cg^Se
SYMBOL _VFM_DS12_S0-MH FM1₅3₀0-MH FM1_V4_d0_c-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forwa_Gr_ad_tV_e–o_tlt_oa_–g_Se_oa_ut_r1_c._e0A_VoD_ltC_{age – Continuous} VF
V_GS
Maximum Average Reverse Current at @T A=25℃
Rated DC Block^Din^rg^a–iV^nCo^Cl_ot^ua_ng^rtrie^ennutous _{@ TA =}@₂T₅A_°=_C125℃
IR
I_D
± 20 ^0.50 Vdc
mA
130
0.70
0.5
10
1
0.85
0.9
-
0.92 Volts
mAmps
NOTES:
– Pulsed Drain Current (t_p ≤ 10 µs)
I_DM
520
Gate
1- Measured at 1TMoHtaZl PanodwaeprpDlieisdsriepvaetrisoenv@oltaTg_Ae=of245.0°CVDC.
P_D
225
mW
2- Thermal Resis_Ota_pnc_ee_raF_tr_inom_{g a}Ju_nn_dc_Stio_tn_ort_ao_gA_em_Tb_eie_mnt_perature
Range
T_J, T_stg – 55 to
°C
150
2
Source
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
R_θJA
T_L
556 °C/W
260
°C
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.