BSS84LT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Power MOSFET 130 mA, 50 V

WILLAS
1.0^PA^oSU^wRF^eA^rCE^MM^OOU^SN^FT S^EC^THOT¹T³K⁰Y B^mAR^AR^mIER^pR^sE^,CT⁵IF⁰IER^VS^o-2^l0^tV^s- 200V
SOD-123+ PACKAGE
FM120-M+
BSS84LTT1HRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
P^•–^LC^owh^poa^wn^ern^loe^ssl^, S^higO^{h e}T^ff–^ici2^en3^cy.
• High current capability, low forward voltage drop.
•^TH^hi^egh^sesur^mgeⁱⁿcⁱa^ap^tua^rb^eility^s.^{urface mount MOSFETs reduce power loss}
co•nGsuearrvderinegnfeorrgoyv,ermvoaltkaignegptrhotisecdtioenv.ice ideal for use in small power
0.146(3.7)
0.130(3.3)
m•aUnlatrgaehmigehn-stpceiercdusiwtryit.chTiynpgi.cal applications are dc–dc converters, load
sw• iStcilhicionnge, ppitaoxwiaelrplamnaarncahgipe,mmeentatl sinilicopnojrutanbctlieon.and battery–powered
pr^•o^Ld^eu^ac^dt^-s^frs^eu^ec^ph^ara^tss^mc^eo^em^{t e}pⁿu^vtⁱe^rorsⁿ,^mp^erⁿin^tate^{l s}rs^ta,ⁿc^de^al^rlu^dl^sa^or^fand cordless telephones.
•_• E_R^Mn_o^I_H^Le^-_Sr^Sg_p^Ty_r^D_oE_d^-1f_uf_c⁹ic_t⁵i_f⁰e_o⁰_rn_p^/t²_ac²_k⁸_{ing code suffix "G"}
• M_Hain_loia_getu_nr_fe_reeS_pO_roT_d–_u2_ct3_foS_r u_parf_ca_kic_ne_{g c}M_odo_eu_sn_ut_ffP_ixa_"Hck_" age Saves Board Space
• ^MP^eb-^cF^hre^aeⁿpⁱa^cc^ak^lag^de^ai^ts^aavailable
• _REp_oo_Hx_Sy :_pU_rL_o9_d4_u-_cV_t0_fora_rte_pd_af_cla_km_ine_gr_ce_ota_drd_ea_sn_ut _{ffix ”G”}
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• _HC_aas_loe_g:_eM_nol_fd_ree_ed p_pl_ra_os_dtic_u,_cS_t O_foD_r-1_p2_a3_cH_{king code suffix “H”}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
SOT –23^{0.031(0.8) Typ.}
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
•
Weight
:
Approximated
3 Drain
0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RSiantginlegsphaat _{s2e5℃halfawmabvieen,} t6t0e_{1Hmzp,ererastiusrtieveunolfeisnsd-uocthtievrewliosaeds.pecified.}
For capacitive load, derateGcautrerent by 20%
RATINGS
Marking Code
2
Maximum Recurrent Peak Reverse Voltage ^Source
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16 ^Ma1^r8^{king D}1ⁱ0^agram 115 120
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
20
30
IO
40
50
60
1.0
80
100
PD
150
200 ^Volts
Amps
Peak
MAXIMUM
Forward Surge
R_CuA_rrT_eI_nN_{t 8}G_.3S_m(_sT_sJ_in=_gl2_e5_h^°_aC_lf
s^uiⁿne^le-w^ssav^oe^ther_I^w_FS^is_M^e
noted)
superimposed on rated _Rloa_ad_tin(J_gEDEC method)
Symbol Value Unit
Typical Thermal Resistance (Note 2)
Typical J^Dun^ractⁱiⁿo^–n^toC^–a^Sp^oa^uci^rt^ca^enc^Ve^o(^lN^tao^gt^ee 1)
RΘJA
C^VJ^DSS
50
Vdc
Operating^GT^ae^tem^–p^toe^–ra^Stu^or^ue^rcR^ea^Vng^oe^{ltage – Continuous}
T^VJ GS
± 20-55 to +V1d2c 5
30
40 _{PD = Device Code}
120 _{M =-M55otnot+h1C50ode}
Amps
℃/W
PF
℃
Storage T_De_rm_aip_ne_Cra_utu_rrr_ee_nR_t ange
TSTG
mA
- 65 to +175
℃
– Continuous @ T_A = 25°C
– Pulse_Cd_HD_Ar_Rai_An_CC_Tu_Er_Rre_ISnt_T(_ICt_pS≤ 10 µs)
Maximum_ToF_to_ar_lw_Pa_ord_wV_erol_Dta_isg_se_ipa_at _t1_io.0_nA_@DC_{TA = 25°C}
Maximum_OA_pv_ee_rara_tig_ne_gR_ae_nv_der_Ss_te_orC_au_gr_ere_Tn_et _mat_pe@_raT_tuA_r=_e25℃
Rated DC B_Rlo_ac_nk_gin_eg Voltage
@T A=125℃
I_D
130
SYM^IBDOML
VF_PD
TI_JR, T_stg
FM120-⁵M²H⁰FM130-MH FM140-MH
225
m⁰W^.50
– 55 to °C
150
FM150-M₀H_.7F₀M160-_OMH_RF_DM_E18_R0-_IM_N0H_G.8F₅M_IN11_F0_O0-M_RH_MF_AM_T1₀1_I.O5₉0_N-MH
FM1200-MH
0.92
Dev₀i_.c₅e
Package
Shipping
BSS8140LT1 SOT-23 3000/Tape&Reel
UNIT
Volts
mAmps
NOTES: Thermal Resistance – Junction–to–Ambient R_θJA
1- Measur_Med_aa_xt_im1 _uM_mHZ_Lean_ad_da_Tp_ep_mlie_pd_er_re_av_te_ur_rs_ee _fv_oo_rlt_Sag_oe_ldo_ef_r4_in.0_gVDC. _TL
2- Thermal RPeusirsptaonsceesF, rfoomr 1J0unsceticoonntodsAmbient
556 °C/W
260
°C
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.