BSS138WT1 Datasheet, PDF (1/5 Pages) WILLAS ELECTRONIC CORP – 200 mAmps, 50 Volts

WILLAS
Power MOSFET 200 mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BSS138_TW_HRT_U1
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
N–Channel SOT-323 ^{• Low power loss, high efficiency.}
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• H_Tyig_ph_ics_au_lrg_ae_pc_pa_lip_ca_ab_tii_olit_ny_s. _{are dc–dc converters, power management in}
• Guardring for overvoltage protection.
• ^pU^olt^rr^ta^ah^bi^lg^eh-^asⁿp^dee^bd^as^tw^teit^rc^yh^–i^pn^og.^{wered products such as computers, printers,}
• ^PSi^Clic^Mo^Cn ^Ie^Api^cta^ax^ri^da^sl ^,pl^ca^en^la^lur^lc^ah^rip^a,ⁿm^de^ct^oal^rdsi^ll^eic^so^sn^tj^eu^ln^ec^pt^hio^onⁿ. ^es.
• _•Lea_Ld_o-_wfre_Te_hp_ra_er_sts_hom_ldee_Vt _oe_ln_tavi_gro_en₍m_Ve_Gn_Sta_(thl ₎s_:t₀an_.5d_Va_.r_.d_.1s_.o₅f_{V) makes it ideal for low}
•
R^Mo^IH^Lv-oS^Sltp^Tar^Do^gd^-e1uc^9at^5pf⁰o^p0r^lip^c/2a^ac^2tk^8ioinⁿg^scode suffix "G"
•_HalM_ogi_en_nia_ft_ru_eere_prS_odO_uT_ct–_f3_or2_p3_acS_ku_inr_gfa_cc_oe_deM_so_ufu_fin_x t_"HP_"ackage
saves
board
space
1
2
0.071(1.8)
3 0.056(1.4)
M_•e_Pc_bh_-Fa_rn_eeic_pa_acl _kd_aa_gt_ea_{is available}
• Epo_Rx_oy_H: _SUL_p9_r4_o-_dV_u0_cr_ta_ft_oed_{r p}fl_aam_cke_inre_gta_cr_od_da_ent_{suffix ”G”}
SOT–323 ^0.040(1.0)
0.024(0.6)
• Ca_Hse_a:_loM_go_eld_ne_fd_rep_elas_pt_ri_oc,_dS_uO_ctD_f-_o1_r2_p3_aH_{cking code suffix “H”}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Ap^Opr^Ro^Dxi^Em^Ra^It^Ned^G0^I.^N01^F1^Og^Rra^Mm^ATION
D_Me_Avi_Xce_IMUMM_Ra_Ark_Tin_INg _{GS AND}Sh_Eip_Lp_Ein_Cg_{TRICAL CHARACTERISTICS}
Drain
3
Ratings at 25B℃SS1a3m8bWieTn1t temperaJt1ure unles3s0o0t0hTearwpeise&sRpeeeclified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160^G-M^aH^teFM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
80
1₂0_S0_ource 150
200 Volts
56
70
105
140 ^Volts
Maximum _MDC_AB_Xl_Io_Mck_Uin_Mg V_Ro_Alta_Tg_Ie_{NGS (TA = 25}o_{C unlesVsDCotherw}2_i0_{se note}3_d0₎
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
Rating
Peak Forward Surge Current 8.3 ms single half sine-wave
Drain–to–Source Voltage
superimposed on rated load (JEDEC method)
Typical The^Grm^aa^tel R^–te^os^–is^Sta^on^uc^rce^e(N^Vo^ot^le^ta2^g)^{e – Continuous}
IO
Symbol
IFSM_VDSS
RΘJA^VGS
Value
50
± 20
Unit
Vdc
Vdc
1.0
30
Marking Diagram
40
Amps
Amps
℃/W
Typical JuncDtiroaninCCapuarrceitnatnce (Note 1)
CJ
mA
120
PF
Operating Temp^–e^Cra^otuⁿr^teⁱⁿR^uoa^un^sge^{@ TA = 25°C}
TJ ^ID
2-0505 to +125
-55 to +150
℃
Storage Tempe^–ra^Ptu^ur^le^seR^dan^Dg^re^{ain Current (tp ≤ 10 µs)} TSTG^IDM
800
J1 ^{- 65 to +175}
℃
Total Power Dissipation @ TA = 25°C
P_D
150
mW
Operatin^Cg^Ha^An^Rd^AS^Ct^To^Era^Rg^Ie^STT^Ie^Cm^Sperature
Maximum Forw_Ra_ar_nd_gV_eoltage at 1.0A DC
SY_VM_FB_TO_J,L_TsF_tgM120-M_–H₁₅F₅₅M_0t1_o30-M₀H_.5°F_C0M140-MH
FM150-MH FM160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UNIT
Volts
Maximum
Rated DC
A_Tve_hr_ea_rg_me_aR_l e_Rv_ee_sr_is_se_taC_nu_cr_ere_–nt_Ja_ut_nc@_tioT_nA_–=_to2_–5_A℃_mbient
Blocking Voltage
@T A=125℃
IR
R_{θ JA}
556 °C/W
0.5 ^{J1 = Device Code}
10 ^{M = Month Code}
mAmps
Maximum Lead Temperature for Soldering
T_L
260
°C
NOTES:
Purposes, for 10 seconds
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.