BSS138LT1 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 200 mA, 50 V

WILLAS
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SOD-123+ PACKAGE
FM120-M+
BSS8LT^TH1 ^RU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
N–^•C^Loh^wa^pon^wen^r e^losl^s SOT–23 ^{, high efficiency.}
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Typi•caHligahpspulricgaetcioanpasbailirtey. dc–dc converters, power management in
porta^• b^Gle^uaa^rdn^rd^ingba^fot^rte^or^vy^e–^rvp^oo^lw^tae^gr^ee^pd^rop^tero^ctd^iouⁿc^.ts such as computers, printers,
PCM^•C^UI^lA^trac^haⁱr^gd^hs^-,^spc^ee^ell^dul^sa^wr^ita^cn^hd^ingc^.ordless telephones.
• ^{• Silicon epitaxial planar chip, metal silicon junction.}
Lo_• w_LeT_ah_d-r_fe_res_eho_pl_ad_rtV_so_mlt_ea_eg_te_en(V_{virGoSn(mth)e:n0ta.5l Vst.a..n1d.5aVrd)smofakes it ideal for low}
voltMaIgLe-SaTpDp-l1ic9a5t0io0n/2s28
• M^•in^RHi^oa_aHlt_ou^Sgr_ee^pnroS_frdeO^uecT^tp–^froo2^rd3^puacS^{ct k}u_foir^nrf^ga_pacc^oce_kdieM_ngso^ucu^fofn^idxet^"GP_su"a_ffc_ixka_"Hg_"e saves board space
• PMb-Fercehe apancikcaagledisaatavailable
0.071(1.8)
0.056(1.4)
R•oEHpSoxpyr:oUdLu9c4t-fVo0r rpaatecdkfilnagmceoredtearsduanfftix ”G”
H•aCloagseen: Mfroeledepdropldaustcict ,fSoOr pDa-1c2k3inHg code suffix “H”
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
SOT –23
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
N - Channel
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20¹%
MARKING DIAGRAM
& PIN ASSIGNMENT
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
2 ₁₂
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
80
56
J¹⁷⁰1₀₀
150
200 Volts
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
MAXIMUM RATINGS (TA = 25^oC unless otherwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
superimposed on rate_Rd_alo_ta_ind_g(JEDEC method)
Symbol Value
Unit
Typ_Dic_ra_al_iT_nh_–e_torm_–Sa_ol R_ure_cs_eis_Vta_on_lc_tae_g(_eNote 2)
Typical Junction Capacitance (Note 1)
Ope^Gra^at^ti^eng^–tT^oe^–m^Sope^ur^ra^ct^eur^Ve^oR^ltaan^gg^ee^{– Continuous}
V_DS^R_SC^ΘJJA
V_GSTJ
50
± 20
Vdc
-5^V5^dt^co +125
1.0
J1 = Device Code
30
M = Month Code
40
1_O20_{RDERING-55INtoF+O1R50MATION}
Amps
Amps
℃/W
PF
℃
StorDargaeinTeCmurpreernatture Range
– Continuous @ TA = 25°C
– Pulsed Dra_Cin_HAC_Ru_Arr_Cen_Tt_E(_Rtp_IS≤_TI1_C0_Sµs)
TSTG
mA
D-e6v5icteo +175 Package
Shipping
℃
I_D
200
I_{DSMYMBOL F}8_M0₁0_{20-MH FM130-MH FM140-MH FM150-M}^B_H^S_F^S_M¹₁³₆⁸₀^L_-M^T_H¹_FM180-^S_M^O_H ^T_FM^–2₁³_100-MH³⁰_F⁰_M⁰₁₁^T₅^a₀^p_-M^e_H^&_F^R_M1^e₂^e₀^l_{0-MH UNIT}
MaxTimotuaml PFoowrwerarDdisVsoipltaagtieonat@1.0TA_AD=C25°C
P_D VF
225
mW 0.50
0.70
0.85
0.9
0.92 Volts
Max_Oim_pu_em_ratA_inv_ger_aa_ng_de R_Se_tov_re_ar_gs_ee C_Teu_mrre_pn_et_raat_tur@_e T A=25℃ _{TJ, TstgIR – 55 to}
°C
0.5
RatedRDaCngBelocking Voltage
@T A=125℃
150
10
mAmps
NOT^TE^hS^e: ^{rmal Resistance – Junction–to–Ambient R}θJA
1- M_Mea_as_xu_ir_med_umat 1_LeM_aH_dZ_Ta_en_md _pa_epp_ralie_tud_rerev_foe_rs_Se_ov_lo_dl_eta_rg_ine_gof 4.0 VD_TC_L .
2- Ther^Pm^ua^rl^pR^oe^ss^eis^st^,an^foc^re¹F⁰ro^sm^ecJu^onⁿc^dti^son to Ambient
556 °C/W
260
°C
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.