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BR1005 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER
WILLAS
BR1005
SINGLE-PHASE SILICON BRIDGE RECTIFIER
THRU
1V.O0LATASGUERFRAACNGEEM5O0UtNo T10S0C0 HVoOltTsTKCYURBRAERNRTIE10RASRmOEpDCe-rT1eIs2F3IE+RSP-A2C0VK-AB2G0RE01V010
FM
FM
Pb
Features
• Batch process design, excellent power dissipation offers
FEATURbEeStter reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
* Surge ovoeprtloimadizreatbinoga:r1d5s0paamcpee. res peak
*
*
PLbo-wFrfeo•erwLpaaorcwdkavpgooelwtaisegreavldoarsiolaspb, lheigh
efficiency.
RoHS p•roHdiugcht fcour prraecnkitncgacpodaebsiluitffyix, l”oGw” forward voltage drop.
Haloge•n Hfreigehprsoudurgctefocrappaackbinilgityc.ode suffix “H”
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
MECHA•NLIeCaAdL-fDreAeTpAarts meet environmental standards of
* UL listed MtheILr-eScoTgDn-iz1e9d5c0o0mp/2o2ne8nt directory, file #E195711
* Epoxy:•DReoviHceShparsodUuLcftlafomrmpaabcikliitnygclcaosdsieficsautifofinx 9"G4V" -O
* Lead: MilH-SaTlDog-2e0n2Efremeetphroodd2u0c8tCfogrupaaracnktienegdcode suffix "H"
*
*
Mechanic Mounting position: Any
Weight: 7.86 grams
a
l
data
* Mounti•ngE:pHooxlye :thUrLu 9fo4r-V# 06rsactreedwflame retardant
• Case : Molded plastic, SOD-123H
,
MAXIMU•MTRerAmTIiNnGalSs A:PNlDatEeLdEtCeTrmRIiCnAaLlsC, HsoAlRdAeCraTbElReISpTeIrCMSIL-STD-750
Ratings at 25 oC ambient teMmepethraotudre2u0n2le6ss otherwise specified.
Single ph•asPeo, hlaarlfitwya:veIn, 6d0icHazt,erdesbisytivceaotrhiondduectbivaenlodad.
For capacitive load, derate current by 20%.
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
BR-10
.296 (7.5)
.255 (6.5)
0.012(0
0.071(1.
0.056(1.
.042 (1.10)
.038 (0.97) DIA.
TYP.
.75 MIN.
(19.1)
.770 (19.6)
.730 (18.5)
HOLE FOR
NO. 6 SCREW
0.040(1.
0.024(0.
0.031(0.8) Typ.
0.031(
AC .520 (13.2)
.480 (12.2)
.770 (19.6)
AC
.730 (18.5)
Dimensions in inches and (millimeters)
.520 (13.2)
.480 (12.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TMA =A2X5oCIMunlUessMothRerwAisTe InNoteGd) S AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ amRbAiTeInNtGtSemperature unless otherwiSsYeMsBpOeLcifieBdR.1005
MMaaSxxiimminuugmmleRReMpcShuraVresonelttaPhgeeaalkf Rweavevrese, V6o0ltHagze, resistive of inductive loaVVdRRRM.MS
50
35
MaFximorumcaDpCaBcloitcivkiengloVoaldta,gederate current by 20%
VDC
50
BR101
100
70
100
BR102
200
140
200
BR104
400
280
400
BR106
600
420
600
BR108
800
560
800
BR1010
1000
700
1000
UNITS
Volts
Volts
Volts
Maximum Average Forward
Rectified Output Current at:
Tc
Tc
=
=
R1500A0oCoTCIN
G
S
Marking Code
TA = 50oC
SYMBOL FM120-MH FM130-MH FM1401-M0.0H FM150-MH FM160-MH FM180-MH FM1100-MH FM
IO
6.0
Amps
12
13
14 6.0 15
16
18
10
PeMakaFxoimrwuarmd SRuregceuCrurerrnent tP8e.3amksRseinvgelerhsaelfVsionelt-awgaeve
suMpearimxipmosuemd oRn MraStedVlooaltda(gJEeDEC method)
Operating Temperature Range
StoMraagxeimTeummperDatCureBRloancgkeing Voltage
VRIFRSMM
20
30
40
50
150
60
VRMS
14
21
28
35
42
TJ
-55 to + 125
VTDSCTG
20
30
4-505 to + 150 50
60
80
100
Amps
56
70
0C
800 C
100
Maximum Average Forward Rectified Current
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
Peak Forward SurgCeHCAuRrAreCnTtE8R.I3STmICsSsingle half sine-wave
MasxuimpuemrimFoprowsaerddVoonltargaeteDdrolopapder(JelEemDeEnCt amt 5e.0thAoDdC)
MaTxyimpuicmaRl eTvheersremCaulrrRenetsaist tRaantecde (Note 2) @TA = 25oC
DCTBylpoicckainlgJVuonltcatgieonpeCr ealepmaecnittance (Note 1)@TC = 100oC
Operating Temperature Range
Storage Temperature Range
IO
SIYFSMMBOL
VF
RΘJA
CJIR
TJ
TSTG
1.0
BR1005 BR101 BR102
-55 to +125
BR104
1.1
5
0.2
BR106
BR108 3B0R1010 UNITS
Volts
40
uAmps
120 mAmps
-55 to +150
- 65 to +175
2012-11
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM1W40-IMLHLFMA1S50-MEHLFEM1C60T-MRH FOMN180I-CMHCFMO11R00P-M.H FM
VF
0.50
0.70
0.85