BCX53 Datasheet, PDF (1/3 Pages) Weitron Technology – PNP Plastic-Encapsulate Transistor

WILLAS ^FM120-M+
SO_1.T_0A-8_SU9_RP_FAl_Ca_Es_Mti_Oc_U-_NE_T n_SCc_Ha_Op_TTs_Ku_Yl_Ba_At_Re_RIT_ERra_REn_Cs_Ti_IFs_IEt_Ro_Sr_-s_{20V- 200V}
BCX53 ^THRU
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
TRANSISTO^bR^ett(^eP^r N^reP^ve)^{rse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
FEATURES_•
optimize board space.
Low power loss, high efficiency.
z Pb-Fre• eHipghaccukraregnet ciaspaabvilaityil,alobwleforward voltage drop.
RoHS^•p^Hro^igd^hu^sc^ut^rgf^eo^cr^ap^pa^ac^bk^ilii^tn^y.g code suffix ”G”
• Guardring for overvoltage protection.
Haloge_• n_Ulf_tr_raee_higp_hr_-o_sd_peu_ec_dt _sfo_wr_itcp_ha_inc_gk_.ing code suffix “H”
z Low V^•o^Sltⁱa^lig^coe^{n epitaxial planar chip, metal silicon junction.}
z High C^•u^Lr^er^ae^dn^-t^{free parts meet environmental standards of}
MIL-STD-19500 /228
APPLICAT^•IO^RHoaN^HloS^{Sgepnrofrdeuectpfroordpuacct kfoinrgpacockdiengsucfofidxe"Gsu"ffix} _"H"
z Medium_MeP_cow_he_ar_nG_ie_cn_ae_lra_dl_aP_tu_arposes
z Driver_•S_Eta_pog_xe_ys_{: U}o_Lf ₉A₄u_-Vd₀io_raA_tem_d p_flalif_mie_er_rs_etardant
MARKING:_•B_CC_asX_e5_:3_M:_oA_ldH_e,_dB_plC_asX_ti5_c,3_S-1_O0_D:_-A₁₂K₃,_HBCX53-16:AL
,
MAXIMUM^•R^TeA^rT^mIⁱN^naG^lsS^:P(^lT^at_a^e=^d2^t5^er℃^minu^an^lsl^,e^ss^os^ldo^ert^ah^be^lerw^pei^rs^Me^ILn^-o^St^Te^Dd^-7)⁵⁰
Method 2026
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
3. EMITTER
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol ^{• Polarity : Indicate}P^da^br^yam^cae^thte^or^{de band}
Value
Unit ^{Dimensions in inches and (millimeters)}
V_CBO ^{• M}C^oo^ulⁿle^ticⁿt^gor^P-B^oa^sis^tie^onVo^{: A}ltaⁿg^ye
V_CEO • WCeoigllhetc:toArp-EprmoxititmeraVteodlta0.g0e11 gram
-100
V
-80
V
V_EBO
Emitt_Mer_A-B_Xa_Is_Me_UVo_Mlta_Rg_Ae_{TINGS AND ELECTRICAL CHA}-_R5_ACTERISTV_ICS
I_{RCatings at} C₂₅o_℃llec_at_mor_bC_ieu_ntrr_te_emnt_{perature unless otherwise specified.}
-1
A
PS_Cingle phaCseolhleaclftworavPeo, w60eHr zD, irsessiipstaivtieonof inductive load.
500
mW
R^F_θJ^o_A^{r capaci}T^tivh^ee^lr^om^ada^,l ^dR^ee^ras^ti^est^ca^un^rc^reeⁿF^{t b}ro^ym²⁰J^%unction To Ambient
250
℃/W
T_j
Junction T^Rem^ATp^Ie^Nr^Ga^Sture
Marking Code
T_Msatgximum
Storage Temperature
Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM1₁3₅0-₀MH FM140-MH F_℃M150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VRRM
12
20
-55¹³~³⁰+150
14
40
℃₅₁₀₅
16
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
ELEC_MT_aR_ximIC_umA_DL_CC_BH_locA_kinR_gA_VC_oltT_agE_eRISTICS (T_a=25℃ _Vu_Dn_Cless o₂₀therw₃is₀e spe₄c₀ified)₅₀
60
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
Parameter
Symbol T est conditions
Peak Forward Surge Current 8.3 ms single half
CCoollllee_scc_utt_poo_err_ri--_mbe_pmaos_sieett_deborrneb_raar_tekedadklo_odwadon(wJv_EnoDvElto_Calg_mtaeegtheod)
sine_V-w₍a_Bv_Re_)CBOIFSM
V_(BR)CEO*
I_C=-100µA,I_E=0
I_C=-10mA,I_B=0
Typical Thermal Resistance (Note 2)
RΘJA
Emitt_Te_yr_p-_ib_caa_ls_Je_unb_ctr_ioe_na_Ckd_apo_aw_cin_tanv_co_el₍t_Na_og_te_{e 1)}
V_{(BR)EBO CJ} I_E=-100µA,I_C=0
Colle^Oc^pt^eo^rr^atcⁱⁿu^gt-^To^ef^mf^pc^eu^rar^tr^ue^rent^Range
I_CBO ^TJ V_CB=-30V,I^-_E⁵=⁵0^{to +125}
Emitt^Se^tor^rc^agu^et-^To^ef^mf ^pc^eu^rarr^tue^rn^et^Range
I_EBO ^TSTGV_EB=-5V,I_C=0
1.0
Min Typ Max
Unit
-100 ³⁰
V
-80
40
V
-5 ₁₂₀
V
-0.^-1^{55 to +1}µ⁵A⁰
- 65 to +175 _-0.1
µA
CHARACTERISTICS
h_{FE(1)S* YMBO}V_{L CFEM}=₁-₂2_0-V_M,_HI_CF=_M-₁5₃m_0-MA_{H FM140-MH FM150-M}6_H3_{FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M}
DC c^Mu^ar^xr^imen^umt g^Fa^oi^rn^{ward Voltage at 1.0A DC}
h_FE(2)* ^VF V_CE=-2V, I_C=-150m^0.5A⁰
0₆.7₃0
2⁰5^.80⁵
0.9
0.92
Maximum Average Reverse Current at @T A=25℃_{hFE(3)* IR VCE=-2V, IC=-0.5A}
Rated DC Blocking Voltage
@T A=125℃
Collector-emitter saturation voltage
V_CE(sat)* I_C=-0.5A,I_B=-50mA
40 ^0.5
10
-0.5
V
Base^NO-e^Tm^ESit^: ter voltage
V_BE*
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Tran₂s_-it_Ti_ho_en_rmf_ar_le_Rq_eu_sie_stn_anc_cy_{e From Junction to Ambient}
f_T
* Pulse Test
V_CE=-2V, I_C=-0.5A
VCE=-5V,IC=-10mA, f=100MHz
-1
V
50
MHz
CLASSIFICATION OF h_FE(2)
RANK
RANGE
BCX53
63–250
BCX53-10
63–160
BCX53-16
100–250
2012-06
WILLAS ELECTRONIC COR
2012-0
WILLAS ELECTRONIC CORP.