BCX51 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP medium power transistors

WILLAS
SO_1.0T_A-_S8_U9_RFP_ACla_E s_MOti_Uc_N-_TE_Sn_CHc_Oa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IET_Rr_Ra_En_CTs_IFi_Is_ERto_S r_-2s_{0V- 200V}
SOD-123+ PACKAGE
FM120-M+
BCX51 ^THRU
FM1200-M+
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TRANSIS•TLOowRp(rPofNilePs)urface mounted application in order to
optimize board space.
SOT-89
SOD-123H
• Low power loss, high efficiency.
FEATURE• SHigh current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z NPN^•C^Ho^igm^hp^sl^ue^rm^gee^cn^at^ps^abto^ilitB^y.CX54,BCX55,BCX56
z
• Guardring for overvoltage protection.
Low V_{• U}ol_ltt_ra_ag_he_{igh-speed switching.}
z High ^•C^Su^ilr^icre^onnt^{epitaxial planar chip, metal silicon junction.}
1. BASE
2. COLLECTOR
0.071(1.8)
0.056(1.4)
z Pb-F^•re^LMee_IaLp^d-S-a^fTrc^eDk^e-1a^p9g^a5re^t0s0i^ms_/2e2a^e8v^{t e}aⁿi^vla^irb^onle^{mental standards of}
RoHS^{• R}p^or^Ho^Sd^pu^roc^dt^uf^co^t r^fop^{r p}a^ac^ck^kiⁱⁿn^gg^coc^do^ed^se^uffs^ixu^"f^Gfi^"x ”G”
Halogen free product for packing code suffix "H"
Halog_Me_en_cfr_he_ae _npr_io_cd_au_lc_dt f_ao_tr_apacking code suffix “H”
3. EMITTER
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
0.024(0.6)
• Case : Molded plastic, SOD-123H
APPLICATIONS
,
z
• Terminals :Plated terminals, solderable per MIL-STD-750
Medium Power _MG_ee_thn_oe_dra₂₀l ₂P₆urposes
y _{z Drive•rPSotlaargiteys: IonfdiAcautdeidobAy cmapthloifdieerbsand}
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
r _{• Mounting Position : Any}
a _{• Weight : Approximated 0.011 gram}
MARKING:BCX5_M1_A:A_XA_IM, _UB_MCX_R5_A1_T-_I1_N0_G:A_SC_A,_NB_DC_EX_L5_E1_C-1_T6_R:A_ICD_{AL CHARACTERISTICS}
in _{Ratings a}B_{t 2}C_5℃X5_a3_m:A_bieH_n,_{t t}B_emC_pX_er5_a3_tu-_r1_e0_u:_nA_leK_ss,_oB_thC_erX_wi5_se3-_s1_pe6_c:_iA_fieL_d.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim ^RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
MA_MX_aI_xM_imU_umM_RR_MSA_VT_oI_lN_tagG_e S (T_a=25℃ unless oth_Ve_Rr_Mw_Sise n₁o₄ ted) ₂₁
28
35
42
18
10
115 120
80
100
150
200
56
70
105
140
e _{Maximum DC Blocking Voltage}
Symbol
Parameter
r _{Maximum Average Forward Rectified Current}
VDC
20
30
40
50
60
80
100
150
200
Value
Unit
IO
1.0
BCX51
P ^P_V^ea_C^k_B^F_O^{orward S}_C^ur_o^g_l^e_le^C_c^u_t^r_o^re_rⁿ_-B^{t 8}_a^.3_s^m_e^s_V^s_oⁱⁿ_l^g_ta^le_g^h_e^{alf sine-wave} IFSM
-45
V
30
superimposed on rated load (JEDEC method)
BCX53
-100
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
OS_VtpoCerar_Eag_OteinTgeTmepme_Cprae_{otrlualerteuc}rRe_toaRrn-ag_Ene_mge_{itter Voltage}
BCX51^CJ
TJ
BCX5^T3^STG
-55 to +1^-42⁵5
-80
120
V
-55 to +150
- 65 to +175
V_EBO
Emitt^Ce^Hr-^AB^Ra^As^Ce^TEV^Ro^Il^Sta^Tg^ICe^S
Maximum Forward Voltage at 1.0A DC
Ma^Ix^Cimum
Collector Current
Average Reverse Current
at
@T A=25℃
Ra^Pte^Cd DC Bloc^Ckin^og^lleV^co^tlt^oa^rge^{Power Dissi}@^paT^tA^io=ⁿ125℃
SYMBOL FM120-MH FM130-MH_-5FM140-MH FM150_V-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0_-.₁50
A^0.70
0.85
0.9
0.92
IR
0.5
500
mW
10
NO^RT^θE^JS^A:
Thermal Resistance From Junction To Ambient
250
℃/W
1- MTejasured at 1JuMnHcZtiaonnd aTpepmliepderervaetruserevoltage of 4.0 VDC.
150
℃
2- _TTh_se_tgrmal Resi_Ssta_tonc_rae _gF_erom_TeJ_mun_pct_eio_rn_at_to_uA_rembient
-55~+150
℃
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.