|
BCW69LT1 Datasheet, PDF (1/7 Pages) Motorola, Inc – General Purpose Transistors | |||
|
WILLAS
BCW69LTF1M120-M+
THRU
1.0GA SeUnRFeArCaE lMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEiRsRtoECrTsIFIERS -20V- 200VBCW70LTF1M1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
PNP Silicon ⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Featrâ¢uLoeopswtimpirzoefibleosaurdrfaspceacmeo. unted application in order to
We dâ¢eLcolawrepothwaet rthloesms,ahteigrhiael offficpireondcuyc.t
comâ¢plHiaingchecwuritrhenRtocHaSparbeiqliutyir,elmowenfotsr.ward voltage drop.
3
COLLECTOR
SOD-123H
0.146(3.7)
0.130(3.3)
Pb-Fâ¢reHeigphacskuarggee cisapaavabiillaitby.le
RoHâ¢SGpruoadrudcrtinfogrfpoarcokvinegrvcooldtaegseufpfirxoâtGecâ tion. 1
Haloâ¢geUnltfrraeehipgrho-dsupcet efodr spwacitkcinhgincgo.de suffix âHâ BASE
⢠Silicon epitaxial planar chip, metal silicon junction.
⢠Lead-free parts meet environmental standards of
MIL-STD-19500 /228
2
EMITTER
⢠RoHS product for packing code suffix "G"
MAXIMHUalMogRenAfTreIeNpGroSduct for packing code suffix "H"
Mechanical data
Rating
Symbol
Value
Unit
⢠Epoxy : UL94-V0 rated flame retardant
CollectorâEmitter Voltage
⢠Case : Molded plastic,
SOD-V1C2E3OH
â 45
Vdc
Em⢠itTteerrâmBiansaelsV:oPltlaagteed terminals,VsEoBlOderable peâr5M.0IL-STD-7V5d0c,
0.031(0.8) Typ.
SOTâ23
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Collector CurrenMt âetChodnti2n0u2o6us I C
â 100
mAdc
⢠Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
THER⢠MMAouLnCtinHgAPRoAsiCtiTonER: AISnyTICS
Châ¢aWraecitgehrits:tiAc pproximated 0.011 gram
Symbol
Max
Unit
RatingTTsoAt=aatl2D255e°âCvicMeaDmAibsXiseIipMnat UttieoMmn pFReRrAâat5TurIBeNouaGnrdlSe,s(As1)oNthDerEwLisEe CspTePRciDfIieCdA. L
Derate above 25°C
CHA2R2A5 CTERISmTWICS
1.8
mW/°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction to Ambient
For capacitive load, derate current by 20%
RθJA
556
°C/W
Total Device Dissipation
Alumina SubstraRteA, (T2I)NTGAS= 25°C
MarkinDgeCroadtee above 25°C
SYMBOLPFDM120-MH FM13300-M0H FM140-MmH WFM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
12
132.4 14 mW/°C15
16
18
10
115 120
MaximTumheRrmecaul rRreenstisPtaeankceR,eJvuenrcsteioVnotlotaAgembient
VRRM RθJA 20
34017 40 °C/W50
60
MaximJuumncRtMioSn aVnodltaSgteorage Temperature
VRMSTJ , Tstg14 â5521to +150 28 °C 35
42
80
100
150
200
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
MaDxEimVumICAEveMraAgeRFKoIrNwGard Rectified Current
IO
1.0
Peak FoBrwCaWrd6S9uLrTge1C=uHrre1n;t 8B.3CmWs7s0inLgTle1 h=aHlf 2sine-wave IFSM
30
superimposed on rated load (JEDEC method)
TyEpiLcaEl CThTeRrmICalARLesCisHtaAncReA(NCoTteE2R) ISTICS (TA = 25°CRuÎnJAless otherwise noted.)
40
Typical Junction CapCahciataranccete(rNisottiec 1)
Operating Temperature Range
StoOraFgFe TCeHmApeRraAtuCreTREaRnIgSeTICS
CJ
TJ
TSTG
Symbol
-55 to +125
Min
Max120 Unit
-55 to +150
- 65 to +175
CollectorâEmitter Breakdown Voltage (IC = â2.0 mAdc, IB = 0 )
V (BR)CEO
â 45
â
Vdc
CollectorâEmCittHeAr RBAreCaTkEdRowISnTIVCoSltage (IC = â100SYµMABdcO,LVFEMB1=200-M) H FM13V0-(MBRH)CFEMS 140-MH FâM51050-MH FM1â60-MH FM1V80d-cMH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
EmitterâBase Breakdown Voltage (I
Maximum Average Reverse Current at @T
RatedCDoClleBclotocrkiCngutVooffltCaguerrent
@T
AE==2â51â0 µAdc,
A=125â
IC
IR
=
0)
V (BR)EBO
I CEO
â 5.0
â
Vdc
0.5
10
(VCE = â20 Vdc, I E = 0 )
NOTES:
1- Meas(VurCeEd=atâ120MHVZdca,nIdEa=pp0lie, dTArev=er1s0e0v°oClta) ge of 4.0 VDC.
2- T1h.eFrmRaâl 5Re=s1is.t0anxce0.F7r5omx J0u.0n6ct2ioinnt.o Ambient
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
â
â 100
nAdc
â
â 10
µAdc
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
|
▷ |