BCW68GLT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistor

WILLAS ^FM120-M+
1.0^GA S^eUⁿRF^eA^rC^aE ^lM^POU^uN^rT^pSC^oH^sOT^eTK^TY^rB^aAⁿRR^sIEⁱR^sR^toEC^rT^sIFIERS
-20V-
BCW68GLT1 THRU
200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
PNP Silicon • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Ro^•H^LS^owpr^po^rd^ou^fic^let f^so^ur^rp^faa^cc^ekin^mg^oc^uoⁿd^tee^ds^au^pff^pix^li"^cG^at"ⁱ,^{on in order to}
optimize board space.
•
Ha_•lo_Lg_oe_wn_pf_ore_we_ep_r r_lood_ssu_,c_ht _if_go_hr p_ea_ffc_ick_iin_eg_ncc_yo_.de suffix "H" _.
W^•ei^Hgh^igt^h: ^c0^u.0^r0^re8ⁿg^{t capability, low forward voltage drop.}
• High surge capability.
ORDE_• R_GI_uN_aG_rdI_rN_inF_gO_foR_r M_ovA_eT_rvIO_olN_{tage protection.}
• UDlteravihceigh-speed sMwaitrckhiningg.
Shipping
• Silicon epitaxi
BCW68GLT1
al
pl
anar
DG
chip,
m
etal₃s₀i₀li₀c_/o_Tn_apju_en_&c_Rti_eo_en_l .
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MAXIM^HU^alM^ogeRⁿA^frT^eI^eN^pG^roS^{duct for packing code suffix "H"}
Mechanical data
• Epo^Rx^ay^tin: ^gUL94-V0 rated flam^Se^ymre^bt^oa^lrdant ^Value
Unit
Co_•ll_Cec_at_so_er–_:E_Mm_oitt_le_dr_eV_do_plt_la_ag_se_{tic, SOD-}V_12CE3OH
– 45
Vdc
Co•llTeectromr–inBaalsse:VPolalttaegdeterminals,Vs_Co_Bl_Oderable pe–r M60IL-STD-7V5d0c^,
Emitter–Base Vo^Mlt^eag^the^{od 2026} V EBO
Co^•ll^Pec^ot^lo^ar^rC^itu^yr^:re^Innt^d—^icaC^teon^dti^bn^yuo^cu^as^thodI^e_C^band
• Mounting Position : Any
– 5.0
– 800
Vdc
mAdc
THER• MWAeiLghCt H: AApRpAroCxTimEaRteISdT0I.C01S1 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
SOT–23
0.040(1.0)
0.024(0.6)
3
0.031(0.8) Typ.
COLLECTOR
1
Dimensions in iBnAcShEes and (millimeters)
2
EMITTER
Characteri_Msti_Ac _{XIMUM RATINGS AND ELEC}S_Tym_Rb_ICol_{AL CHA}M_Ra_Ax_CTERISU_Tni_It_CS
RSiantginleg^TTs^o_pA^t_ha=aat^l2_s2^D5_e5^e°℃h_Cvia^c_l^e_fawm^D_aⁱb^s_vi^seeⁱn^p_, t^a_6t^t_0e^io_Hmⁿ_zp^F_,er^R_era^–_stiu⁵_srt^B_iev^o_eu^ano^rl^d_fe^,_isn⁽s¹_d⁾_{uocthtievrewliosaeds.pe}Pci_Dfied.
For ca^Dp^ea^rc^ai^tt^eive^ablo^oa^vd^e,²d⁵e^°r^Cate current by 20%
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
R_θJA
556
°C/W
Total Device Diss^Rip^Aa^Tti^Io^Nn^GS
Markin_Ag _lC_umod_ine_{a Substrate, (2) TA = 25°C}
Maximu_Dm_erR_ate_ecu_ar_bre_on_vt_eP₂e₅a_°k_CReverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
P_{D 12}
13³⁰⁰ 14 ^mW 15
16
18
10
115 120
VRRM
20
30^2.4 40 ^mW/°C50
60
80
100
150
200
Maximu_Tm_heR_rmM_aS_l V_Ro_el_sta_isg_te_{ance, Junction to Ambient}
VRMS _RθJA 14
21₄₁₇ 28 _°C/W35
42
56
70
105
140
MaximuJmunDctCioBnlaonckdinSgtoVroalgtaegTeemperature
VDC T_J , T_stg20 –5530to +150 40 °C 50
60
80
100
150
200
Ma_Exi_Lm_Eu_Cm_TA_Rve_ICra_Age_LF_Cor_Hw_Aar_Rd _ARe_Cc_Ttif_Eie_Rd _IC_Su_Trr_Ie_Cn_St _{(TA = 25°C} I_uO_{nless otherwise noted.)}
1.0
Peak Forward Surge C_Cu_hrr_ae_rn_at _c8_t._e3_rm_iss_tis_cingle half sine-wave
superimposed on rated load (JEDEC method)
Typ^Oic^Fa^Fl T^Che^Hrm^Aa^Rl R^Ae^Csi^Tst^Ean^Rc^Ie^S(^TN^Io^Cte^S2)
IFSM
RΘJA
Typica_Cl J_ou_lln_ec_ct_ti_on_r–C_Ea_mp_ia_ttc_eit_ra_Bn_rc_ee_a(_kN_do_ot_we _n1)_{Voltage (IC = –10 m}C_AdJ _{c, IB = 0 )}
Operat_Cin_og_lleT_ce_tm_orp_–e_Era_mtu_itr_te_erR_Ba_rn_eg_ae_{kdown Voltage (IC = –10 µA}T_dJ_{c, VEB = 0 )}
Storage Temperature Range
TSTG
Emitter–Base Breakdown Voltage (I _E= –10 µAdc, I _C = 0)
Symbol
V _(BR)CEO
-55 to +125
V _(BR)CES
V _(BR)EBO
Min
– 45
– 60
– 5.0
Typ M3a0x Unit
40
— ¹â€”²⁰ Vdc
—
—
Vdc ^{-55 to +150}
- 65 to +175
— — Vdc
Collector Cut_Cof_Hf C_ARur_Are_Cn_Tt_ERISTICS
SYMBOL FM120-MH FM130^I-MCEHS FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maxim₍u_Vm_CEF₌or_–w₄a₅rd_VV_do_cl_,ta_Ig_Ee₌a₀t ₎1.0A DC
VF
Maxim₍u_Vm_CEA₌ve_–r₄a₅ge_VR_dce_,ve_I r_Bs₌e₀C_,u_Trr_Aen₌t₁a₅t _0°@_CT₎ A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
Emitter Cutoff Current (V_EB = – 4.0 Vdc, I _C = 0)
0.50
—
0_—.70 _{– 20 nAd}0_c.85
—
— –^0.1⁵0 µAdc
10
I _EBO
—
— – 20 nAdc
0.9
0.92
NO₁T_.E_FS_R: _{– 5 = 1.0 x 0.75 x 0.062 in.}
1- M₂e_. a_As_lu_ur_med_ina_at 1₌ M_0.H₄Z_xa₀n_.d₃a_xpp₀l_.i₀ed₂₄re_iv_ne_.r₉se_9.v₅o_%ltag_ae_luo_mf _i4_n.0_a.VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.