BCW66GLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
FM120-M+
BCW66GLT1THRU
1.0A^GSU^eRⁿFA^eC^rE^aM^lO^PUN^uT^rS^pCH^oO^sTT^eKY^TB^rA^aRⁿRI^sER^isR^tE^oCT^rIF^sIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
NPNFeSaitluicroesn
• Batch process design, excellent power dissipation offers
ƽ _Wb_ee_dtt_ee_cr_lare_reve_tr_hs_ae_t l_te_ha_ek_mag_ae_tec_ru_iarr_le_on_ft_pa_rn_od_duth_ce_t rmal resistance.
c^•o^Lm^owpli^pa^rn^oc^fie^lew^si^uth^rfR^aco^eH^mS^or^ueⁿq^tu^ei^dre^am^ppe^ln^icts^a.^{tion in order to}
Pb^o-^pF^trⁱe^me^izp^eac^bk^oa^ag^rde ^sis^paa^cv^ea^.ilable
R^• o^LH^oS^w p^pr^oo^wdu^ec^r t^lofo^sr^sp^, a^hc^igk^hin^eg^fc^fio^cd^ieeⁿs^cu^yf^.fix ”G”
H^• a^Hlo^igg^hen^cufr^re^reeⁿp^tr^co^adu^pc^at^bfⁱo^lir^typ^,a^lc^ok^win^fg^orc^wo^ad^re^ds^vu^off^li^tx^a“^gH^e”^drop.
• High surge capability.
DEV•ICGEuaMrAdrRinKgINfoGr oAveNrDvoOltaRgDeEpRroINteGctiIoNnF. ORMATION
• Ultra high-speed switching.
• Silic^Do^en^ve^icp^eitaxial planar ch^Mip^a,^rm^kieⁿt^gal silicon juncti^So^hnⁱ.^pping
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT–23
0.071(1.8)
0.056(1.4)
•_BL_Ce_Wa₆d₆-f_Gre_Le_T1parts meet enviro_En_Gmental standa₃rd₀₀s₀o_/Tf _ape&Reel
MIL-STD-19500 /228
MAX_•IM_RoU_HM_{S p}R_rA_odT_uI_cN_t G_foS_{r packing code suffix "G"}
Halo_Rg_ae_tin_ngfree product for pack_Sin_yg_mc_bo_od_le suffix "H_Va"_lue
Unit
Mechanical data
3
COLLECTOR
Collector–Emitter Voltage
• Epoxy : UL94-V0 rated
V _CEO
flame retardant
45
Vdc
C_•ol_Cle_act_so_er–_:B_Ma_ose_ldV_eo_dlt_pag_lae_{stic, SOD-}V_12C3BOH
75
Vdc
E_•m_Tit_ete_rr_m–B_ina_as_le_sV_:Pol_lt_aa_tg_ee_{d terminals,}V_soEB_ldO_{erable per7M.0IL-STD-75V0d}^,_c
0.031(0.8) Typ.
1
BASE
0.040(1.0)
0.024(0.6)
2
0.031(0.8) Typ.
EMITTER
y _{Collector CurrenMt e—thCoodn2tin0u2o6us I C}
800
mAdc
r _{• Polarity : Indicated by cathode band}
THE_•R_MM_oA_uL_ntC_inH_gA_PR_osA_itC_ioT_nE_:R_AI_nS_yTICS
Dimensions in inches and (millimeters)
a _{C•hWaraecigtehrtis:tAicpproximated 0.011 gram}
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
in TA = 25°C^{MAXIMUM RATINGS AND ELECTRPDICAL CHAR22A5CTERISmTWICS}
RatingDsearta2te5℃aboavme b2i5e°nCt temperature unless otherwise specified.
1.8
mW/°C
SingleTphhearsmeahl Ralef swisatvaen,c6e0, JHuzn,crteiosnistoiveAmofbiinednut ctive load. R_θJA
556
°C/W
For caTpoatcailtiDvevloicaedD, idsesripaatetiocnurrent by 20%
lim ^{Alumina SubstraRteA,T(I2N)GTAS= 25°C}
Marking^DC^eo^rad^te^{e above 25°C}
Maximu^Tm^heR^re^mc^au^lrr^Re^en^st ⁱP^se^taaⁿk^cR^e,e^Jve^urⁿs^ce^tioVⁿol^tt^oag^Ae^mbient
Junction and Storage Temperature
e _{Maximum RMS Voltage}
P_D
300
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13^2.4 14 ^mW/°1^C5
16
VRRM ^RθJA 20
30⁴¹⁷ 40 ^°C/W50
60
VRMS^{TJ , Tst}1^g 4
–5₂5₁to +150₂₈ °C ₃₅
42
18
10
115 120
80
100
150
200
56
70
105
140
r Ma_Exim_LEum_CTD_RC_IB_Clo_Ac_Lkin_Cg_HV_Aolt_Rag_Ae_{CTERISTICS (TA = 25°C}VD_uC_{nless ot}2_h0_{erwise n}3_o0_ted.) 40
50
60
80
100
Maximum Average Forward Rectified Current
IO
1.0
Characteristic
Symbol
Min
Typ
Max
Unit
P _{Peak Forward Surge Current 8.3 ms single half sine-wave}
sup^Oer^Fim^Fpo^Cse^Hd^Aon^Rr^Aate^Cd^Tlo^Ea^Rd (^IJ^SE^TD^IE^CC^Smethod)
IFSM
30
150
200
TypicalCTohlelercmtoarl–REemsiistttaenr cBere(Nakodteow2)n Voltage
Typical_(IJ_Cu₌nc₁ti₀o_mn _AC_da_cp_,a_Ic_Bit₌an₀ce₎ (Note 1)
Operat_Cin_og_llT_ee_cm_top_r–er_Ea_mtu_ir_te_teR_r a_Bn_reg_ae_{kdown Voltage}
Storage Temperature Range
(I_C = 10 µAdc, V _EB = 0 )
V
RΘJA
(BR)CEO
CJ
TJ
V _(BR)TCESSTG
45
—
-55 to +125
75
—
—
40 _Vdc
120
-55 to +150
— - 65 to +17V5dc
Emitter–BaseCHBAreRaAkCdoTwEnRIVSoTlItCagSe
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximu_(Im_E=Fo₁r₀w_µar_Ad_dV_co_, l_Ita_Cg₌e₀a₎t 1.0A DC
V _{V (BR)EBOF}
5.0
0.50 ^—
0.^—70
Vdc _0.85
0.9
0.92
Maximu_Cm_olA_lev_ce_tora_rg_Ce_uR_toe_fv_fe_Crs_ue_rreC_nu_trrent at @T A=25℃ _{I CES IR}
Rated DC Blocking Voltage
@T A=125℃
0.5
10
(V_CE = 45 Vdc, I_E = 0 )
—
—
20
nAdc
NOTES:_{(VCE = 45 Vdc, IE = 0 ) (TA=150°C)}
—
—
20
µAdc
1- Meas_Eur_med_itta_et_r1_CM_uH_toZ_ffa_Cnd_ura_rp_ep_nl_tied reverse voltage of 4.0 V_I D_EBC_O.
2- Thermal Resistance From Junction to Ambient
(V _EB= 4.0 Vdc, I _C = 0)
—
—
20
nAdc
(V _EB= 7.0 Vdc, I _C = 0) (3)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
—
—
100
nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Added I_EBO test to guarantee quality for oxide defects
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.