BCW65ALT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistor

WILLAS
FM120-M+
BC:$LT1^THRU
1.0^GA S^eUⁿRF^eA^rC^aE M^{l P}OU^uNT^rpSC^oH^sOT^eTK^TY^rB^aAⁿRR^sIEⁱR^sR^tE^oC^rT^sIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
NP•N^FB^eaSt^acih^tl^upicr^ro^eoce^snss design, excellent power dissipation offers
Package outline
Featru^be^es^{tter reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
We d_oe_pc_tl_ia_mre_izt_eha_bt_ot_ah_re_d m_spa_ate_cr_eia_. l of product
com_• p_Ll_oia_wnc_pe_oww_eit_rh_loR_so_sH_, S_higre_hq_eu_fi_fr_ie_cm_iee_nn_ct_ys_..
Pb-Free package is available
• High current capability, low forward voltage drop.
RoH_• S_Hip_gro_hd_su_uc_rt_gfo_er_cp_aa_pc_aki_bn_ig_litc_yo_.de suffix ”G”
Hal_•og_Ge_un_af_rre_de_rinp_gro_fd_ou_rc_ot _vfo_er_rp_va_oc_ltk_ain_gg_ec_po_rd_oe_tes_cu_tff_ii_ox_n“_.H”
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
MAX^•IM^UlU^trM^{a h}R^igA^hT^-sIN^peG^eS^{d switching.}
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lea^Rd^a-^tfⁱrⁿe^ge parts meet enviro^Sn^ym^me^bn^oltal stand^Va^ar^ld^us^eof
Unit
C_•ol_R^Mle_oc^I_H^Lto^-_Sr^S–_p^TE_r^Dm_od^-it¹_ute_c⁹r_t⁵V_f⁰_oo⁰_rlt_pa^/2_ag_c²e_k⁸_{ing code}V_{sCuEfOfix "G"}
32
Vdc
ColHleacltoogr–eBnafsreeeVporlotadguect for packinVg_Cc_Bo_Ode suffix "H6" 0
Vdc
SOT–23
E^Mmit^eter^c–B^ha^aseⁿVⁱo^clta^age^{l data} V _EBO
5.0
Vdc
C^•ol^Ele^pct^oo^xr^yC^:u^Urre^Ln⁹t⁴—^-VC⁰o^rn^at^tin^eu^do^fu^las^{me r}I^e_C^tardant 800
• Case : Molded plastic, SOD-123H
mAdc
,
THE^•R^TM^eA^rmLⁱⁿC^aH^lsA^:PR^lA^atC^eT^dE^teR^rmISⁱT^naIC^lsS^{, solderable per MIL-STD-750}
y _{Method 2026}
r _{C•hParoalcatreirtiyst:icIndicated by cathode band}
Symbol
Max
T_•ot_Mal_oD_ue_nv_ti_ic_ne_gD_Pis_os_sip_ita_iotio_nn_:
FR–
Any
5
Board,
(1)
a _{TA = 25°C}
D^•e^Wrat^ee^iga^hb^to^:v^Ae ^p2^p5°^rC^{oximated 0.011 gram}
P_D
225
1.8
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
Unit
1
BASE
Dimensions in inches and (millimeters)
mW
2
EMITTER
mW/°C
in ^{Thermal RMesAisXtaInMceU, JMunRctiAonTtIoNAGmSbieAnNt D ELECTRRθIJCA AL CHAR55A6CTERIS°CT/IWCS}
Total Device Dissipation
RSiantginleg_Asp_{luhamat s2ine5a}℃h_Salufabwmsatb_rvaiee_ten, _,t6₍t0₂eH₎mz_Tp,_Aer_=eras2ti₅us_°rti_Ceveunolfeisnsduocthtievrewliosaeds.pecPifDied.
Derate above 25°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
R_θJA
300
mW
2.4
mW/°C
417
°C/W
lim ^{Junction and StoRrAagTeINTGemSperature}
SYMBO_TL_{J ,}F_TM_s1_tg20-MH F_–M₅1₅30_to-M₊H₁F₅M₀140-MH_°F_CM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
DEVICE MARKING
Maximum RMS Voltage
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
80
100
150
200
56
70
105
140
e _{MaximumBCDWC6B5loAcLkTin1g=VEolAtage}
VDC
20
30
40
50
60
80
100
150
200
r _{MaEximLEumCTARveIrCagAeLFoCrwHaArdRRAeCctTifiEedRCISuTrreICntS (TA = 25°CIuOnless otherwise noted.)}
1.0
P _{Peak Forward Surge CCurhreanrat 8c.t3ermisstsicingle half sine-waSveymbIoFSl M}
Min
Typ
Max ₃₀ Unit
superimposed on rated load (JEDEC method)
OFF CHARACTERISTICS
Typical Thermal Resistance (Note 2)
RΘJA
40
TypicalCJoulnlecctitoonr–CEampaitcteitraBncreea(Nkdootew1n)Voltage
Operat₍in_ICg₌Te₁m_0mpe_Ara_dt_cu_,r_Ie_BR₌ a₀n₎ge
Storage_CT_ole_lem_cp_toe_rr_–at_Eu_mre_itR_tea_rn_Bg_re_{eakdown Voltage}
(I_C = 10 µAdc_C,_HV_AERBA=_C0_T)_ERISTICS
V
CJ
(BR)CEO
TJ
TSTG
V _(BR)CES
32_{-55 to +125} —
60
—
— ¹²⁰ Vdc
-55 to +150
- 65 to +175
—
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MaximuEmmFittoerrw–aBrdasVeoBltaregaekadto1w.0nAVDoCltage
VF
Maximu_(Im_E=Av₁e₀ra_µg_Ae_dR_c,e_Iv_Cer₌se₀₎Current at
@T A=25℃^V
(BR)EBO
IR
Rated D_CC_ollB_el_co_tc_ok_rin_Cg_uV_too_fl_fta_Cg_ue_rrent
@T A=125℃ _{I CES}
0.50
5.0
—
0.70
0.85
— _0.5 Vdc
10
0.9
0.92
NOTES:(V_CE = 32 Vdc, I_E = 0 )
—
1- Meas₍u_Vre_Cd_{E =}at₃1₂M_VH_dZ_ca_, n_IEd₌ap₀p_,lie_Td_Ar₌ev₁e₅rs₀e_°Cvo₎ltage of 4.0 VDC.
—
2- Thermal Resistance From Junction to Ambient
Emitter Cutoff Current
(V _EB= 4.0 Vdc, I _C = 0)
I _EBO
—
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
—
20
nAdc
—
20
µAdc
—
20
nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.