BC817-XXLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
General Purpose Transistors
BC817-xxLT1
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
•^ḤR^Ḥo^ḤH^ḤS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
SOT–23
Collector–Emitter Voltage
V _CEO
45
V
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
50
V
5.0
V
500
mAdc
ry _{THERMAL CHARACTERISTICS}
a _{Characteristic}
Total Device Dissipation FR– 5 Board, (1)
in ^{TA = 25°C}
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
lim ^{Alumina Substrate, (2) TA = 25°C}
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
re _{DEVICE MARKING}
P ^{BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C}
1
BASE
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
3
COLLECTOR
2
EMITTER
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 10 mA)
Collector–Emitter Breakdown Voltage
(V_EB = 0, I_C = 10 µA)
Emitter–Base Breakdown Voltage
(I _E = 1.0 µA)
Collector Cutoff Current
(V_CB = 20 V)
(V_CB = 20 V, T_A = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CBO
45
—
—
V
50
—
—
V
5.0
—
—
V
—
—
100
nA
—
—
5.0
µA
2012-
WILLAS ELECTRONIC CORP.