BC817-40WT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
FM120-M+
BC817-40WT^T1^HRU
1.0A^GSU^eRⁿFA^eC^rE^aM^lO^PUN^uT^rS^pCH^oO^sTT^eKY^TB^rA^aRⁿRIE^sR^isRE^tC^oT^rIF^sIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
NPoNptimSizielibcooardnspace.
SOD-123H
• W^{• L}e^od^wec^pla^or^we^eth^r a^lot ^sth^se^{, h}m^iga^hte^eria^ffl^icoⁱf^epⁿr^co^yd^.uct compliance with RoHS requirements.
P^• b^H-ⁱF^gr^he^ce^up^rra^ecⁿk^t a^cg^ape^ai^bs^ila^itv^ya^, i^lola^wb^fle^{orward voltage drop.}
R^• o^HH^igS^h p^sr^uo^rd^gu^ec^ct^af^po^ar ^bpⁱa^lic^tyk^.ing code suffix ”G”
• Guardring for overvoltage protection.
H_• a_Ul_lo_trg_ae_hn_igfr_he_-e_spp_ero_ed_du_sc_wt _if_to_cr_hp_ina_gc_.king code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MMAILX-ISMTUDM-19R5A0T0I/N2G28S
• RoHS product for packing code suffix "G"
Halogen f^Rre^ae^tipⁿr^goduct for packing co^Sd^ye^ms^bu^off^lix "H" ^Value
Unit
SOT–323
Me_Cc_oh_llea_cton_r–i_Ec_ma_itl_ted_{r V}a_olt_taa_ge
V _CEO
45
V
0.040(1.0)
•
Ep_Cox_oly_le:_cU_toL_r–9_B4_a-V_se0_Vr_oa_lt_te_ad_geflame
r
e
t
a
r_Vd
ant
CBO
50
• Ca_Es_me _i:_ttM_ero_–l_Bd_ae_sd_ep_Vl_oa_ls_tati_gc_e, SOD-123H_{V EBO}
5.0
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector Current — Continuous I _C
500
y _{Method 2026}
V
V
mAdc
0.031(0.8) Typ.
1
BASE
3 ^0.024(0.6)
COLLECTOR
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
r _{• Mounting Position : Any}
a _{THERMAL CHARACTERISTICS}
• Weight : Approximated 0.011 gram
Characteristic
Symbol
Max
Dimensions in inches and (millimeters)
2
EMITTER
Unit
in ^{TotaMl DAeXviIcMe UDiMssipRaAtioTnINFRG–S5 BAoNarDd, E(1L) ECTRICALP DCHARACTERISTICS}
Ratings at 25T℃A =a2m5°bCient temperature unless otherwise specified.
Single phase^Dh^ea^rl^af ^tw^ea^av^be^o,^v6^e0²H⁵z^°,^Cresistive of inductive load.
225
mW
1.8
mW/°C
For capacitivTehloearmd,adl Rereasteistcaunrcree,nJt ubnyc2ti0o%n to Ambient
R θJA
556
°C/W
lim ^{Total DevRicAeTDINissGipSation}
SYMBOL FM120^P-M^DH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code ^{Alumina Substrate, (2) TA = 25°C}
12
13
3₁0₄0
15^mW 16
18
10
115 120
Maximum Rec^Dur^ere^ran^tt^eP^ae^ba^ok^vR^ee²v⁵e^°rs^Ce Voltage
VRRM
20
30
2₄.4₀
5^m0 ^W/°C 60
80
100
150
200 Volts
Maximum RMS^ThV^eo^rl^mtag^ae^{l Resistance, Junction to Ambient}VRMS
14^{R θJA} 21
4₂1₈7
35^°C/W 42
56
70
105
140 ^Volts
e _{Junction and Storage Temperature}
Maximum DC Blocking Voltage
VDC
T_{20J , T stg 30 –55 to40+150 50 °C 60}
80
100
150
200 ^Volts
r _{MaximumEALvEerCagTeRFIoCrwAaLrdCRHeActiRfieAdCCTuErreRnItSTICS (TA =IO25°C unless otherwise noted.)}
1.0
Amps
P Peak Forward Surge Current _C8._h3_am_ras_cs_tin_eg_rile_sth_icalf sine-wave _IFSM
Symbol
Min
Typ
30Max
Unit
Amps
superimposed on rated load (JEDEC method)
Typical Th^Oe^Frm^Fal^CR^Hes^Ais^Rta^Anc^Ce^T(N^Eo^Rte^IS2^T) ^ICS
RΘJA
40
℃/W
Typical JunctiCoonllCeacptoarc–itEamncitete(rNBotreea1k)down Voltage
Operating Tem_(ICpe₌ra_–t₁u₀re_mR_Aa₎nge
Storage Temperature Range
Collector–Emitter Breakdown Voltage
(V_EB = _C0,_HI_{AC R}=_A–_C1_T0_Eµ_RA_IS) _TICS
Maximum For_Ew_mar_id_tteV_ro_–l_Bta_ag_se_ea_Bt _r1_e.0_aA_kdD_oC_{wn Voltage}
Maximum Ave_(Ira_Eg₌e_–R₁e_.0ve_µrs_Ae₎ Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
Collector Cutoff Current
CJ
120
PF
TJ
V _(BR)CEO-55 to +125 45
—
—
-5V5 to +150
℃
TSTG
- 65 to +175
℃
V _(BR)CES
50
—
—
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
V _(BR)EBO
I _CBO
5.0
—
0.5^—
V
10
mAmp
NOTES:
(V_CB = 20 V)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(V_CB = 20 V, T_A = 150°C)
2- Thermal₁R_. e_Fs_Ris_–ta₅n₌ce₁F_.0ro_xm₀J_.u₇n₅ct_xio₀n_.t₀o₆A₂m_inb_.ient
—
—
100
nA
—
—
5.0
µA
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.