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BC807-40WT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors
WILLAS
FM120-M+
BC807-40WTT1HRU
1.0GA SeUnRFeACrEaMl OPUuNTrpSCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTsIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
PNPopStimilizice boonard space.
• Low power loss, high efficiency.
z R•oHHigSh pcurorrdeuntcctafoparbpilaitcy,klionwgfcoorwdaerdsuvofflitxag"eGd"rop.
• High surge capability.
H•aGlougarednrinfgrefoer povroerdvuoclttagfoerpproateccktiinogn. code suffix "H"
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
DEV•ICUEltrMa AhiRghK-IsNpGeeAdNswDitOchRinDgE.RING INFORMATION
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
•DLeevaicde-free parts meMeatrekninvgironmePnataclksatgaendards oSf hipping
MIL-STD-19500 /228
B•CRH80oa7Hlo-S4g0epWnrofTrde1uectpfroordpuacct kfoYinrLgpacockdiengsucfofiSdxeO"GTsu-"3ff2ix3"H" 3000/Tape&Reel
SOT–323
MAXMIMeUcMhRaAnTIiNcGaSl data
• Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Unit
• Case : Molded plastic, SOD-123H
Collector–Emitter Voltage
V CEO
–45
V,
• Terminals :Plated terminals, solderable per MIL-STD-750
y Collector–BaseMVeoltthaoged 2026 V CBO
–50
V
0.031(0.8) Typ.
1
BASE
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
r E•mPittoelra–rBitays:eIVnodlitcaagteed by cathodVeEbBOand
C•olMleoctuonr tCinugrrePnots—itiConon:tAinnuyous I C
–5.0
–500
V
mAdc
Dimensions in inches and (millimeters)
2
EMITTER
a • Weight : Approximated 0.011 gram
THERMAL CHARACTERISTICS
in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Ratings at 25℃ ambient temperature unless otherwise specified.
SingleTpohtaalsDeehvaiclfewDaivses,ip6a0tiHonz,FrRes–is5tivBeoaorfdi,n(d1u)ctive load. P D
For caTpaA c=it2iv5e°Cload, derate current by 20%
Derate above 25°C
225
mW
1.8
mW/°C
lim Thermal ResistaRnAceT,INJuGnSction to Ambient
SYMBOLRFθMJA120-MH FM1305-M56H FM140-M°HCF/MW150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MarkingToCtoadl eDevice Dissipation
MaximuAmluRmeicnuarrSeunbt sPteraatkeR, (e2v)eTrsAe=V2o5l°taCge
e MaximuDmeRraMteSaVboolvtaeg2e5°C
P D 12
13
14
15
16
VRRM
20
30
40
50
300
mW
60
VRMS
14
212.4 28 mW/°3C5
42
18
10
115 120
80
100
150
200
56
70
105
140
MaximuTmheDrCmBalloRceksinisgtaVnocltea,gJeunction to Ambient
VDC R θJA20
30417 40 °C/W50
60
80
100
150
200
r MaximuJmunAcvteiornagaenFdoSrwtoarradgReeTcetmifiepderCauturrreent
IO T J , T stg
–55 to +150
°C
1.0
P PeaEkLFEorCwaTrdRSICurAgeLCCurHreAntR8.A3 CmsTsEinRgIleShTaIlCf sSine(-TwAa=ve25°CIFSuMnless otherwise noted.)
30
superimposed on ratedClohaadra(JcEtDerEisCtimcethod)
Typical Thermal Resistance (Note 2)
Symbol
RΘJA
Min
Typ
Max
Unit
40
TypOicFalFJuCncHtiAonRCAaCpaTcEitaRncISe T(NICotSe 1)
CJ
120
OperatiCngolTleecmtopre–rEamtuirteteRr aBnrgeeakdown Voltage
TJ
-55 to +125
-55 to +150
Storage(ICTe=m–p1e0ramtuAre) Range
TSTGV (BR)CEO
–45
—
-—65 to +175V
Collector–EmCiHtteArRBArCeTaEkdRoISwTnICVSoltage
Maximu(mVEFB o=rw0a, rIdCV=ol–ta1g0eµaAt)1.0A DC
MaximuEmmAittveerr–aBgeasReeBverersaekdCouwrrnenVtoalttag@eT A=25℃
Rated D(ICE =Bl–o1c.k0inµgAV)oltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF V (BR)CES
–500.50
— 0.70 —
V 0.85
0.9
0.92
IR
V (BR)EBO
0.5
–5.0
—
— 10 V
NOTES:Collector Cutoff Current
I CBO
1- Meas(uVreCdB a=t –12M0HVZ)and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
(VCB = –20 V, T J = 150°C)
—
—
–100
nA
—
—
–5.0
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.