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BC807-40WT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors | |||
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WILLAS
FM120-M+
BC807-40WTT1HRU
1.0GA SeUnRFeACrEaMl OPUuNTrpSCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTsIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
⢠Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
⢠Low profile surface mounted application in order to
PNPopStimilizice boonard space.
⢠Low power loss, high efficiency.
z Râ¢oHHigSh pcurorrdeuntcctafoparbpilaitcy,klionwgfcoorwdaerdsuvofflitxag"eGd"rop.
⢠High surge capability.
Hâ¢aGlougarednrinfgrefoer povroerdvuoclttagfoerpproateccktiinogn. code suffix "H"
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
DEVâ¢ICUEltrMa AhiRghK-IsNpGeeAdNswDitOchRinDgE.RING INFORMATION
⢠Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
â¢DLeevaicde-free parts meMeatrekninvgironmePnataclksatgaendards oSf hipping
MIL-STD-19500 /228
Bâ¢CRH80oa7Hlo-S4g0epWnrofTrde1uectpfroordpuacct kfoYinrLgpacockdiengsucfofiSdxeO"GTsu-"3ff2ix3"H" 3000/Tape&Reel
SOTâ323
MAXMIMeUcMhRaAnTIiNcGaSl data
⢠Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Unit
⢠Case : Molded plastic, SOD-123H
CollectorâEmitter Voltage
V CEO
â45
V,
⢠Terminals :Plated terminals, solderable per MIL-STD-750
y CollectorâBaseMVeoltthaoged 2026 V CBO
â50
V
0.031(0.8) Typ.
1
BASE
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
r Eâ¢mPittoelraârBitays:eIVnodlitcaagteed by cathodVeEbBOand
Câ¢olMleoctuonr tCinugrrePnotsâitiConon:tAinnuyous I C
â5.0
â500
V
mAdc
Dimensions in inches and (millimeters)
2
EMITTER
a ⢠Weight : Approximated 0.011 gram
THERMAL CHARACTERISTICS
in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Ratings at 25â ambient temperature unless otherwise specified.
SingleTpohtaalsDeehvaiclfewDaivses,ip6a0tiHonz,FrResâis5tivBeoaorfdi,n(d1u)ctive load. P D
For caTpaA c=it2iv5e°Cload, derate current by 20%
Derate above 25°C
225
mW
1.8
mW/°C
lim Thermal ResistaRnAceT,INJuGnSction to Ambient
SYMBOLRFθMJA120-MH FM1305-M56H FM140-M°HCF/MW150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
MarkingToCtoadl eDevice Dissipation
MaximuAmluRmeicnuarrSeunbt sPteraatkeR, (e2v)eTrsAe=V2o5l°taCge
e MaximuDmeRraMteSaVboolvtaeg2e5°C
P D 12
13
14
15
16
VRRM
20
30
40
50
300
mW
60
VRMS
14
212.4 28 mW/°3C5
42
18
10
115 120
80
100
150
200
56
70
105
140
MaximuTmheDrCmBalloRceksinisgtaVnocltea,gJeunction to Ambient
VDC R θJA20
30417 40 °C/W50
60
80
100
150
200
r MaximuJmunAcvteiornagaenFdoSrwtoarradgReeTcetmifiepderCauturrreent
IO T J , T stg
â55 to +150
°C
1.0
P PeaEkLFEorCwaTrdRSICurAgeLCCurHreAntR8.A3 CmsTsEinRgIleShTaIlCf sSine(-TwAa=ve25°CIFSuMnless otherwise noted.)
30
superimposed on ratedClohaadra(JcEtDerEisCtimcethod)
Typical Thermal Resistance (Note 2)
Symbol
RÎJA
Min
Typ
Max
Unit
40
TypOicFalFJuCncHtiAonRCAaCpaTcEitaRncISe T(NICotSe 1)
CJ
120
OperatiCngolTleecmtopreârEamtuirteteRr aBnrgeeakdown Voltage
TJ
-55 to +125
-55 to +150
Storage(ICTe=mâp1e0ramtuAre) Range
TSTGV (BR)CEO
â45
â
-â65 to +175V
CollectorâEmCiHtteArRBArCeTaEkdRoISwTnICVSoltage
Maximu(mVEFB o=rw0a, rIdCV=olâta1g0eµaAt)1.0A DC
MaximuEmmAittveerrâaBgeasReeBverersaekdCouwrrnenVtoalttag@eT A=25â
Rated D(ICE =Blâo1c.k0inµgAV)oltage
@T A=125â
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF V (BR)CES
â500.50
â 0.70 â
V 0.85
0.9
0.92
IR
V (BR)EBO
0.5
â5.0
â
â 10 V
NOTES:Collector Cutoff Current
I CBO
1- Meas(uVreCdB a=t â12M0HVZ)and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
(VCB = â20 V, T J = 150°C)
â
â
â100
nA
â
â
â5.0
µA
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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