BAW56W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAW56_TW_HRU
FM1200-M+
Pb Free Product
SWITFCeHaItNuGreDsIODE
FEA^•T^BU^aR^tcE^hS^{process design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
z_{• Low}Fa_prs_ot_fiS_lew_si_utc_rfh_acin_eg_mS_oup_ne_te_edd_{application in order to}
z ^optF^imoⁱr^zeG^be^on^ae^rdra^sl^paP^cu^er^.pose Switching Applications
• Low power loss, high efficiency.
z_{• Hig}H_hi_cg_uh_rrC_eno_t n_cad_pu_ac_bt_ia_lin_tyc_, e_{low forward voltage drop.}
z• Hig_Ph_bs_-u_Fr_rg_ee_eca_pp_aa_cb_kil_ait_gy._{e is available}
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Gu_Rar_od_Hri_Sng_pf_ro_or _do_uve_ctrv_fo_ol_rta_pg_ae_cp_kr_inot_gec_ct_oio_dn_e. _{suffix ”G”}
•
•
Ult_Hra_ah_loig_gh_e-_nsp_fe_ree_ed s_pw_roit_dch_ui_cn_tg_f._{or packing code suffix}
Silicon epitaxial planar chip, metal silicon junction.
“H”
z_{• Lea}M_do_-fi_rs_et_eur_pe_arS_tsen_ms_ei_eti_tv_eit_ny_viL_roe_nv_mel_e1_{ntal standards of}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
1
3
2
MARK^HaIN^logG^e:ⁿ K^freJ^eC^{product for packing code suffix "H"}
Max^Mim^eu^cm^haRⁿatⁱi^cng^as^{l d}@^aT^ta^a=25℃
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : MoldePdapralamsteicte, rSOD-123H
Symbol
,
y _{Non-•RTeepremtiintiavles :PPelaatkedRteevrmerisnealsV,oslotaldgeerable per MIVLR-SMTD-750}
Method 2026
Peak Repetitive Peak Reverse Voltage
r _{• Polarity : Indicated by cathode band}
V_RRM
Work_•in_Mg_ouP_ne_ta_ink_g
Reverse Voltage
Position : Any
V_RWM
a _{DC B•loWcekiignhgt : VAoplptraogxeimated 0.011 gram}
V_R
L_0.0i₃m₁₍₀it_{.8) Typ.}
100
Unit_{0.031(0.8) Typ.}
V
Dimensions in inches and (millimeters)
75
V
in ^RMS
Reverse Voltage
MAXIMUM
RATINGS
AND
ELEC^VT^RR^(RI^MC^S)AL
53
CHARACTERISTICS
V
Forward Continuous Current
Ratings at 25℃ ambient temperature
unless
otherwise
spe^Ic^Fif^Mied.
300
mA
Si^Ang^vl^ee^rp^ah^ga^ese^Rh^ea^clf^tiw^fia^ev^de,^O60^uH^tpz^u, r^te^Csi^ust^riv^re^eno^tf inductive load. ^IO
150
mA
Fo_Pr_ec_akpa_Fc_oiti_rv_we _alo_ra_dd,_Sd_ue_rr_gat_ee _Ccu_urr_re_rent_nb_ty_@20_t=%_1.0μs
lim ^RATINGS
@t =1.0s
2.0
I_FSM
A
SYMBOL FM120-MH FM130-MH FM140-₁M_.H₀ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Ma_Prk_oin_wg _eC_rod_De_issipation
Pd ¹²
13
14 ₂₀₀ 15
16
18
1_m0 _W
115
120
Ma_Tx_him_eu_rm_mR_ae_lc_Rur_ere_sn_ist P_tae_nak_ceRe_Jv_ue_nrs_ce_tV_ioo_nlta_tg_oe _Ambient VRRM _RθJA 20
30
40₆₂₅ 50
60
e _{Maximum RMS Voltage}
VRMS
14
21
28
35
42
Ma^Jx^uimⁿu^cm^tioDⁿC ^TB^elo^mck^pin^eg^rV^ao^tl^uta^rg^ee
VDC ^Tj 20
30
40 ¹⁵⁰ 50
60
80
100
150
200 Volts
56
7^℃0^/W 105
140 ^Volts
80
100^℃
150
200 ^Volts
Pr ^{MSaxtiomruamgeAvTeeramgepFeorrawtaurrdeRectified Current}
IO ^TSTG
-55~+150
1.0
℃
Amps
P_Eea_lk_eF_co_trw_ria_crd_aS_lu_Rrge_aC_tiu_nrr_gen_st 8_@.3 m_Ts_as₌in₂g₅le_℃half sine-wave _IFSM
30
Amps
superimposed on rated load (JEDEC method)
Typical Thermal Res_Pis_ata_rn_ac_me _e(N_teot_re 2)
S^Ry^Θm^JAbol Min Typ
Max Unit ⁴⁰
Conditions
℃/W
Typ_Ric_ea_vl _eJu_rsnc_etio_bn_reC_aa_kpa_dc_oita_wn_nce_v(_oN_lo_tate_g1_e)
Operating Temperature Range
V^CT_JJ(BR)
75_{-55 to +125}
V ¹²⁰
-55^IRt⁼o²+^.1⁵5^μ0^A
PF
℃
Storage Temperature Range
TS^VT^FG¹
0.715
V _{- 65 to +175}
I_F=1mA
℃
Forward volta_Cg_He_{ARACTERISTICS}
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Reverse current
NOTES:
@T A=125℃
V_F2
0.855 V
I_F=10mA
SY_VM_VFB_F3OL
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
0.50
1.0
0.7^V0
0.8^I5^F=50mA
FM1150-MH FM1200-MH
0.9
0.92
UNIT
Volts
V_IRF4
1.25
V _0.5
I_F=150mA
mAmps
I_R1
2.5
μA ¹⁰
V_R=75V
I_R2
25
nA
V_R=20V
1- M_Ce_aas_pu_are_cd_ita_at_n1_cM_eH_bZ _ea_tn_wd a_ep_ep_nlie_td_er_re_mve_ir_nse_av_lsoltage of 4.0 VDC. _CT
2- Thermal Resistance From Junction to Ambient
Reverse recovery time
t_rr
2
pF
4
ns
V_R=0V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.