BAW56DW Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

WILLAS
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SOD-123+ PACKAGE
FM120-M+
BAW56DW^THRU
FM1200-M+
Pb Free Product
SWITC^FH^eIN^aG^tuD^rIO^esDE
• Batch process design, excellent power dissipation offers
FEATUR^bE^etS^{ter reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
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• High current capability, low forward voltage drop.
z _• F_Ho_igr_hG_sue_rn_ge_e r_ca_al_pP_abu_ilr_ip_tyo_. se Switching Applications
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• Silicon epitaxial planar chip, metal silicon junction.
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RoHS product for packing code suffix "G"
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Maxim^•u^Em^poR^xyat^: i^Un^Lg⁹s^4-@^V0T^ra_A^t=^e2^d5^fl℃^{ame retardant}
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
termPianraalsm, seotldeerrable
per
,
MIL-STD-750
Peak Repetitive Pe^Ma^ek^thr^oe^dve²r⁰s²e⁶ voltage
Workin^•g^PP^ole^aa^rik^tyR^: e^Inv^deⁱr^cs^ae^teV^do^blt^ya^cg^ae^{thode band}
DC Blo•cMkionugntingVPooltsaigtieon : Any
Forwar^•d^WC^eo^ign^ht^tin^{: A}uo^ppu^rs^oxC^imur^ar^te^en^dt^{0.011 gram}
Package outline
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limits
0.031(0.8) Typ.
Unit
V_RRM
V_RWM
V_R
Dimensions in₇in₅ches and (millimeters_V)
I_FM
300
mA
Average Recti_Mfie_Ad_XO_IMut_Up_Mut _RCu_Ar_Tre_INn_Gt _{S AND ELECTRICAL CHARACTERIST}IO_ICS
150
mA
N^Ro^atnⁱⁿ-^gR^se^ap^te²t⁵it^℃ive^aP^me^ba^iek^ntF^teo^mrw^pea^rr^ad^tuS^reu^urⁿg^le^esC^s u^or^thre^ern^wt^{ise specified.}@ t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
I_FSM
@ t = 1.0s
1
A
For capacitive load, derate current by 20%
Power Dissipation_RATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MH^PF^DM150-MH
200
FM160-MH FM180-MH
FM1100^m-M^WH FM1150-MH FM1200-MH
UN
M_Ta_hr_eki_rn_mg _aC_lo_Rde_{esistance Junction to Ambient Air}
12
13
14 _RθJA15
16 625 18
10_℃/W 115
120
Maximum Recurrent Peak Reverse Voltage
M^Oa^px^eim^raum^tinR^gM^JS^uVⁿo^clta^tig^oe^{n Temperature}
VRRM
20
30
40
50
60
80
100
150
200 Vol
VRMS
14
21
28 ^TJ 35
42 ¹⁵⁰ 56
70 ^℃ 105
140 ^Vol
M_Sa_toxi_rm_au_gm_eD_teC_mBl_po_eck_ri_an_tg_uV_ro_eltage
VDC
20
30
40 _TSTG50
60-55-15080
100 _℃ 150
200 ^Vol
Maximum Average Forward Rectified Current
IO
1.0
Am
E_PL_eaE_kC_FoT_rwR_aI_rdC_SA_urL_geC_CuH_rrA_enR_{t 8}A_.3 C_msT_sE_ingR_leIS_haT_lf I_sC_ineS_-w(_aT_veam_Ib_FS=_M25℃ unless otherwise specified) ₃₀
Am
superimposed on rated load (JEDEC method)
Typical Therma^Pl R^ae^rs^ais^mta^en^tc^ee^r(Note 2)
R^SΘ^yJ^mA ^bol
Test conditions
M₄I₀N
MAX
UNIT
℃/W
Typical Junction Capacitance (Note 1)
Op^Re^era^vt^ein^rg^sT^ee^bm^rp^ee^ara^ktu^dr^oe^wRaⁿn^vge^oltage
CJ
T^VJ(BR) R
I_R=-525.t5oµ+A125
120
PF
75
-55 to +150 V
℃
Storage Temperature Range
Reverse voltage leakage current
CHARACTERISTICS
TSTG
V_R=75V
- 65 to +175
2.5
℃
I_R
µA
SYMBOL FM120-MVHRF=M2103V0-MH FM140-MH FM150-MH FM160-MH FM180-M0H.0FM215100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Ra^Fte^od^rwDC^arB^dlo^vc^oki^ln^tg^agVo^eltage
@T A=125℃
VF
IR _VF
I_F=1mA ^0.50
I_F=10mA
I_F=50mA
0.70
0.5
10
0.₇8₁5₅
855
1000
0.9
mV
0.92 Vol
mAm
NOTES:
1- JMueanscutreiodnatc1aMpHaZcaitnadnacpeplied reverse voltage of 4.0 VDC. CT
I_F=150mA
V_R=0, f=1MHz
1250
2
pF
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
4
nS
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.