BAV99W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAV99WTHRU
FM1200-M+
Pb Free Product
SWITC^FH^eIN^aG^tuD^rI^eO^sDE
• Batch process design, excellent power dissipation offers
FEATUR_beE_ttS_{er reverse leakage current and thermal resistance.}
z Fo^•r^Lh^oi^wg^ph^r-^os^fp^ileee^sud^rfs^aw^ceit^mch^ouinⁿg^tea^d p^ap^ppli^lc^ica^at^tiⁱo^onⁿs^{in order to}
optimize board space.
z Co_• n_Ln_owec_pt_oe_wd_erin_los_sse_,r_hie_igs_{h efficiency.}
z _Pb• _-H_Fi_rg_eh_ecu_pr_are_cn_kt_ac_gap_ea_ib_sili_aty_v, _alo_iw_laf_bo_lr_eward voltage drop.
Ro^•• H_GHS^iugahp_rdsro_ruird_nggu^ec_foct^arf^poo^avr_ebp_rilva^itoc^yl.k_tain_gg_e
code suffix
protection.
”G”
Ha• lUogltreanhfigrehe-spperoedduswctitfcohrinpga. cking code suffix “H”
z Mo^• i^Ssⁱt^liu^cr^oeⁿ S^epeⁱn^tas^xiⁱt^ai^lv^pit^layⁿL^are^cv^he^ipl ^,1^{metal silicon junction.}
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
0.071(1.8)
0.056(1.4)
3
2
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{Method 2026}
r _{MARK•IPNoGla:riKtyJ: GIndoicratAed7by cathode band}
• Mounting Position : Any
a _{Maxim• uWmeigRhta:tAinpgprsox@imTatae=d205.0℃11 gram}
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
in ^{MPAaXraImMeUteMr RATINGS AND ESLyEmCbToRl ICAL CHARACTERISTILCimSit}
Unit
R_Ra_etin_vg_es_rsa_et 2_v5_o℃_ltaa_gm_ebient temperature unless otherwise_Vs_Rpecified.
75
V
Single phase half wave, 60Hz, resistive of inductive load.
FFoor crwapaarcditicveurloraedn,tderate current by 20%
I_O
150
mA
lim ^{Forward power diRsAsTipINaGtioSn}
Marking Code
M_Jax_uim_ncum_tioR_nec_tu_er_mren_pt_eP_re_aa_tk_uR_reeverse Voltage
Maximum RMS Voltage
e _{MSaxtiomruamgeDCteBmlopckeinragtVuorletage}
SYM_PB_DOL FM120-MH FM130-MH FM140-MH FM1₂5₀0₀-MH FM160-MH FM180-MH FM1100-MH F_mM_W1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
VRR_TM_j
20
30
40
5₁0₅₀ 60
VRMS
14
21
28
35
42
V^TDC^stg
20
30
40 ^-55⁵0^~+150 60
80
100
℃¹⁵⁰
200 Volts
56
70
105
140 ^Volts
80
100
℃₁₅₀
200 ^Volts
r _{Maximum Average Forward Rectified Current}
IO
1.0
Amp
P _{PeEaLk FEoCrwTardRSIuCrgAe LCuCrreHntA8.3RmAsCsinTgEle RhaIlfSsTineIC-wSave(TaI=FS2M5℃ unless otherwise specified) 30}
Amp
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction C^Pa^ap^ra^ac^mita^en^tc^ee^r(Note 1)
Operating Temperature Range
Sto^Rra^ege^veT^re^sm^epe^br^ra^etu^are^kdR^oan^wgⁿe ^voltage
RΘJA
40
℃/W
C^SJ ^ymbol
Test conditions
12^M0 ⁱⁿ
Max
Unit
PF
TJ
-55 to +125
-55 to +150
℃
TST^VG^(BR)
I_R= 100µA
- 65 to⁷+⁵175
V
℃
Reverse volta^Cg^He^Al^Re^Aa^Ck^Ta^Eg^Re^ISc^Tu^ICrr^Sent
Maximum Forward Voltage at 1.0A DC
V_R=75V
2.5
µA
SYMBO_IL_R FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
V_R=20V_0.50
0.70
0.85²⁵
0ⁿ.9^A
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rat_Fed_oD_rwC_aB_rl_doc_vki_ong_ltaV_gol_etage
@T A=125℃
IR
V_F
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- T^Dheⁱr^om^dal^eR^ces^ais^pt^aan^ccⁱe^taFⁿro^cm^eJunction to Ambient
C_D
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=0V f=1MHz
0.5
715
10
855
mV
1000
1250
2
pF
mAmp
I_F=I_R=10mA
Reveres recovery time
t_rr
I_rr=0.1×I_R
4
ns
R_L=100Ω
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.