BAV99DW Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

WILLAS
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SOD-123+ PACKAGE
FM120-M+
BAV99DW^THRU
FM1200-M+
Pb Free Product
Features
SWITCH^•I^BN^aG^tchD^pI^rO^ocD^eE^{ss design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
FEATUR•ELSow profile surface mounted application in order to
z Fa^os^pt^tiS^mw^izeitc^bh^oain^rdg^sS^pp^ace^ee^.d
• Low power loss, high efficiency.
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z F^•o^Hr^igG^he^sn^ure^gr^ea^cl ^aP^pu^abrp^ilio^tys^.e Switching Applications
• Guardring for overvoltage protection.
z H_• i_Ug_lh_traC_ho_ign_hd_-su_pc_eta_ednc_swe_itching.
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MIL-STD-19500 /228
H_• a_Rl_oo_Hg_Sen_profr_de_ue_ct p_for_ro_pd_au_cc_kit_nf_go_cr_op_da_ec_sk_ui_fn_fixg_"Gco_" de suffix “H”
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MAKIN^MG:^eK^cJ^hG^{anical data}
Maximu^• m^EpoR^xa^yt^:i^Un^Lg⁹s^4-@^V0T^r_A^a=^te2^d5^f℃^{lame retardant}
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
ter_Pm_ain_ra_als_m, s_eo_tl_ede_rrable
per
,
MIL-STD-750
Peak Repetitive Pe^Ma^ek^thre^ov^de²r⁰s²e⁶voltage
Workin^•g^PP^oe^laa^rk^ityR^:e^Ivⁿe^dr^ics^ae^teV^do^blt^yag^cae^{thode band}
DC Blo•cMkionugntingVoPlotasgitieon : Any
Forwar^•d^WC^eo^ign^hti^tn^:u^Ao^pu^ps^roC^xiu^mr^are^ten^dt ^{0.011 gram}
Package outline
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limits
0.031(0.8) Typ.
Unit
V_RRM
V_RWM
V_R
I_FM
Dimensions in₇i₅nches and (millimeter_Vs)
300
mA
Average RectifMieAdXOIMutUpuMt CRuArTreINntGS AND ELECTRICAL CHARACTERISITOICS
150
mA
N^Ro^an^ti-ⁿR^gsep^ate²ti⁵t^℃ive^aP^me^ba^iekⁿF^{t t}o^er^mw^pa^er^rad^tuS^reur^ugⁿe^lesC^su^or^tr^he^en^rwt ^{ise specified}@^. t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@ t = 1.0s
I_FSM
1
A
Power Dissipation _RATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MH^PF^DM150-MH
200
FM160-MH FM180-MH
FM110^m0-M^WH
FM1150-MH FM1200-MH
UN
T^Mh^ae^rkrⁱⁿm^ga^Cl^oR^deesistance Junction to Ambient Air
12
13
14 _RθJA15
16 ₆₂₅ 18
10_℃/W 115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Vo
O_Mp_axe_imra_ut_min_Rg_MJ_Su_Vn_oc_ltt_ai_go_en Temperature
VRMS
14
21
28 ^TJ 35
42 ¹⁵⁰ 56
70 ^℃ 105
140 ^Vo
S^Mt^ao^xr^imag^ume ^Dte^Cm^Bp^loe^cr^kaⁱⁿt^gu^Vre^oltage
VDC
20
30
40 _TSTG50
60-55-15080
100 _℃ 150
200 ^Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
E_PL_eE_akC_FT_orR_waI_rC_{d S}A_uL_rgeC_CH_urrA_enR_{t 8}A_.3C_mT_{s s}E_inR_gleIS_haT_lfI_sC_inS_e-w(_aT_va_e mb_IF=_SM25℃ unless otherwise specified) ₃₀
Am
superimposed on rated load (JEDEC method)
Typical ThermaPl Rareasimstaentceer (Note 2)
RSΘyJmA bol
Test conditions
M4I0N
MAX
UNIT
℃/
Typical Junction Capacitance (Note 1)
CJ
120
P
ORpeervaetinrgseTebmrpeearaktduroewRnanvgoeltage
TVJ(BR) R
-55 to +_I1_R2₌5_2.5µA
75
-55 to +150 _V
℃
Storage Temperature Range
Reverse voltage leakage current
CHARACTERISTICS
TSTG
- 65 to +175
℃
V_R=75V
2.5
I_R
µA
SYMBOL FM120-MH FM130-MHVFRM=12400V-MH FM150-MH FM160-MH FM180-M0H.0F2M51100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
R^Fat^oe^rd^wD^aC^rdBlo^vc^ok^lin^tag^gV^eoltage
@T A=125℃
VF
IR_VF
0_I._F5₌0_1mA
I_F=10mA
I_F=50mA
0.70
0.5
10
0₇.8₁5₅
855
1000
0.9
mV
0.92 Vo
mA
NOTES:
I_F=150mA
1250
1-JMuenascutrieodnatc1aMpHaZciatnadnacpeplied reverse voltage of 4.0 VDC. C_T
V_R=0, f=1MHz
2
pF
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
4
nS
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.