BAV99 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

WILLAS
Dual Series Switching Diode
• RoHS product for packing code suffix "G",
Halogen free product for packing code suffix "H"
• Weight: 0.008g
BAV99
.
DEVICE MARKING ORDERING INFORMATION
Device
Marking
Shipping
.
BAV99
A7 3000 Tape & Reel
MAXIMUM RATINGS (EACH DIODE)
1
ANODE
3
CAHODE/ANODE
2
CATHODE
SOT–23
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 µ s
t = 1.0 ms
t = 1.0 S
Symbol
VR
IF
I FM(surge)
V RRM
I F(AV)
I FRM
I FSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (1) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I (BR) = 100 µA)
V (BR)
70
Reverse Voltage Leakage Current (V R = 70 Vdc)
IR
—
(V R = 25 Vdc, T J = 150°C)
––
(V R = 70 Vdc, T J = 150°C)
––
Diode Capacitance
(V R = 0, f = 1.0 MHz)
CD
—
Forward Voltage (I F = 1.0 mAdc)
VF
––
(I F = 10 mAdc)
—
(I F = 50 mAdc)
––
(I F = 150 mAdc)
––
Reverse Recovery Time
(I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100Ω ) (Figure 1)
t rr
—
Forward Recovery Voltage
(I F = 10 mA, t r = 20 ns)
V FR
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
µAdc
pF
mVdc
ns
V