BAV70W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
BAV7^F0^MW_T¹_H²_R⁰_U^-M+
FM1200-M+
Pb Free Product
SWITC_FH_eIN_aG_tuD_rI_eO_sDE
FEATU• RBaEtcSh process design, excellent power dissipation offers
Package outline
SOT-323
z ^bF^ea^tts^et^r S^rew^veit^rc^sehi^ln^eag^kS^agp^ee^ce^ud^{rrent and thermal resistance.}
• Low profile surface mounted application in order to
z ^oF^po^tir^mG^ize^e n^be^oara^rdl ^sP^pu^ar^cp^eo^. se Switching Applications
SOD-123H
z ^{• L}H^oi^wgh^poC^weo^rn^ld^osu^sc^,t^ha^ign^hce^efficiency.
• High current capability, low forward voltage drop.
z _{• H}P_ib_gh-F_sr_ue_rge_ep_ca_ac_pak_ba_ig_lite_y.is available
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• G_Ru_oa_Hrd_Srin_pg_rofo_dr_uo_cv_te_fr_ov_rol_pta_ag_ce_kp_inro_gte_cc_ot_dio_en._{suffix ”G”}
• U_Hlt_ar_la_oh_gi_egh_n-s_frp_ee_eed_ps_row_dit_uch_ci_tn_fg_o._{r packing code suffix “H”}
• Silicon epitaxial planar chip, metal silicon junction.
z _{• L}M_eo_adis_-ft_ru_er_ee_paS_re_tsn_msi_et_eiv_t i_et_ny_viL_roe_nv_me_el _n1_{tal standards of}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.071(1.8)
0.056(1.4)
1
3
2
MARK^HIN^alG^og:^eK^{n f}J^reA^{e p}o^ror^dA^uc4^{t for packing code suffix "H"}
Mechanical data
Maximum Ratings @Ta=25℃
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded _Ppl_aa_rs_at_mic,_eS_teO_rD-123H
Symbol
,
y _{Non-R• eTepremtiitnivaels P:PelaakteRd etevremrsinealVso, sltoalgdeerable per MIL-STD-750VRM}
Method 2026
r Peak Repetitive Peak Reverse Voltage
• Polarity : Indicated by cathode band
Work_•in_Mg_oP_une_ta_ink_gR_Pe_ov_se_itr_is_oe_n
Voltage
: Any
V_RRM
V_RWM
a _{DC B•loWcekiignhgt :VAoplptarogxeimated 0.011 gram}
V_R
0.031(0.8) Typ.
Limit
100
Unit 0.031(0.8) Typ.
V
Dimensions in inches and (millimeters)
75
V
in ^{RMS Reverse Voltage}
V_R(RMS)
53
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Forward Continuous Current
Ratings at 25℃ ambient temperature unless otherwise specified.
I_FM
300
mA
S^Ain^vg^ele^raph^ga^ese^Rh^ea^cl^tfⁱw^fia^ev^de,^O6^u0^tH^pz^u, ^tre^Cs^uis^rti^rv^eeⁿo^tf inductive load.
I_O
150
mA
FPorecaakpaFcoitrivwealordadS, duerrgaeteCcurrrreennt tby@2t0=%1.0μs
2.0
lim^IFSM
A
RATINGS
@t =1.0sSYMBOL FM120-M^{H FM130-MH FM140-MH FM150-MH FM1}1⁶⁰.0^{-MH FM180-MH FM1100-MH FM1150-MH} FM1200-MH UNIT
Ma_Pr_oki_wng_eC_ro_Dde_issipation
12 _Pd13
14
Maximum Recurrent Peak Reverse Voltage
VRRM
Thermal Resistance Junction to Ambient
e _{Maximum RMS Voltage}
VRMS
20
30
14 ^RθJ2^A1
40
28
Ma^Jx^uimⁿu^cm^tioDⁿC ^TBl^eo^mck^pin^eg^rV^ao^tl^uta^rg^ee
VDC
20
3^T0^j
40
Pr ^{MaSxtiomruamgAevTereamgepFeorrawtaurdreRectified Current}
IO
T_STG
15
1₂6₀₀ 18
50
60
80
625
35
42
56
50
60¹⁵⁰ 80
-55~₁+_.0150
10
m¹W^{15 120}
100
150
200 Volts
70
℃₁/₀W₅
140 ^Volts
100
15^℃0
200 ^Volts
℃
Amps
P_Ee_la_ek _cFo_tr_rw_ia_cr_ad _lSu_Rrg_ae_tC_inur_gren_st 8_@.3 _Tms_as₌in₂g₅le_℃half sine-wave _IFSM
30
Amps
superimposed on rated load (JEDEC method)
Typical Thermal Res_Pis_at_ra_an_mce_e(N_teo_rte 2)
Ty_Rpi_eca_vl_eJ_ru_sn_ecti_bon_reC_aa_kp_dac_oit_wan_nce_vo(N_lto_ate_g1_e)
Operating Temperature Range
Storage Temperature Range
Sy^Rm^ΘJb^A ol
V^CJ_(BR)
TJ
T^VST^FG¹
Min Typ
75_{-55 to +125}
Max
0.715
Unit ⁴⁰
V ¹²⁰
V _{- 65 to +175}
Conditions
-55^IRto⁼¹+1⁰5⁰0^μA
I_F=1mA
℃/W
PF
℃
℃
Forward voltag_Ce_{HARACTERISTICS}
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Reverse current
NOTES:
@T A=125℃
V_F2
0.855 V
I_F=10mA
SY_VVM_FFB₃OL
FM120-MH
FM130-MH FM140-M₁H_.0FM150-MH_VFM160-MH
0.50
0.70
FM180-M₀H_.8IF_F5M₌1₅1₀0_m0-M_AH
FM1150-MH
0.9
FM1200-MH
0.92
UNIT
Volts
V_F4
IR
1.25
V _0.5
I_F=150mA
mAmp
I_R1
2.5
μA ¹⁰
V_R=75V
I_R2
25
nA
V_R=20V
1- M_Ce_aa_ps_aur_ce_id_taat_n1_cM_eH_bZ_ea_tn_wd_ea_epp_nlie_td_erre_mve_ir_ns_ae _lv_soltage of 4.0 VDC._CT
2- Thermal Resistance From Junction to Ambient
Reverse recovery time
t_rr
2
pF
4
ns
V_R=0V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.