BAV70T Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

WILLAS
SOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
BAV7_F0_MT _120-M+
BAV99T_THRU
BAW_F56_MT_1200-M+
Pb Free Product
SWITCHI^FN^eG^aD^tuIO^rD^eE^s
FEATUR^•E^BbS_eatttcehr
process
reverse
design, excellent power dissipation offer
leakage current and thermal resistance.
s
z Fast^•S^Lw^owitc^ph^roin^filg^{e s}S^up^rfe^ae^ced^{mounted application in order to}
optimize board space.
z For G_{• L}e_on_we_pra_owl P_eru_lr_op_so_s,s_he_igS_h w_efi_ft_ic_cih_ei_nn_cg_y.Applications
z High^• C^Ho^ign^hd^cu^uc^rrt^eaⁿn^t c^cae^{pability, low forward voltage drop.}
z _Pb-F^•_re^H_e^ig_p^h _a^su_c^r_k^g_a^e_g^c_e^ap_is^ab_a^il_v^ity_a^._ilable
• Guardring for overvoltage protection.
RoHS_{• U}p_lr_tro_ad_hu_igc_ht _-f_so_pr_ep_ea_dc_sk_win_itg_chc_ino_gd_.e suffix ”G”
Halo•geSnilicfroeneeppirtoadxiuacl tplfaonrapracchkipin, mg ectoadl seiliscuofnfijxun“Hct”ion.
z Mois^•tu^Ler^ae^dS^-fe^ren^es^pit^ai^rv^tsit^my ^eL^ee^t v^ene^vl ⁱ1^{ronmental standards of}
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
BAW56T^• M^Tea^rmrkⁱⁿin^ag^ls:^:PJD^{lated term}BⁱA^naV^ls7^,0^sT^oldeM^raa^blr^ek^pin^eg^r :^MJ^ILJ^-STD-75B⁰ AV99T
Method 2026
Maximu^•m^PoR^laa^rt^iti^yn^:g^Ins^d@^icaT^tea^d=^b2^y5^c℃^{athode band}
• Mounting Position : Any
• Weig^Pht^a:^rA^ampp^er^to^ex^rimated 0.011 gram ^Symbol
0.031(0.8) Typ.
Marking: JE
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Limit
Unit
Reverse voltag_Me _{AXIMUM RATINGS AND EL}V_{ERCTRICAL CHARACTERISTI}8_C5_S
V
F^RSo_iar_nw^tginla_egr^spd_hac_{at s2}u_e5r^℃ r_he_an_lfat_wmabvieen, ^{t6t0eHmzp,ererastiusrtieveunolfeisnsduocthtievrewlios}I_aO^{eds.pecified.}
75
mA
F^Fo^or^rw^ca^ar^pd^acp^ito^ivw^e e^lor^ad^d,is^ds^ei^rp^ata^eti^co^un^{rrent by 20%}
P_D
150
mW
RATINGS
J_Mu_an_rkc_inti_go_Cn_ot_de_emperature
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
T_j
12
13
14 ¹⁵1⁰5
16
18
10 ^℃ 115
120
S^Mt^ao^xrⁱa^mg^ue^m t^Re^em^cup^rre^erⁿa^t t^Pu^er^ae^{k Reverse Voltage}
Maximum RMS Voltage
T^V_s^R_t^R_g ^M
20
30
40 _-55~5₊0₁₅₀ 60
VRMS
14
21
28
35
42
80
100 _℃ 150
200 Vo
56
70
105
140 ^Vo
EL^ME^axC^imT^umRI^DC^CA^BL^locC^kinH^gA^VoR^ltaA^geCTERISTICS (Ta=2^V5^D℃^C unle²s⁰s oth³e⁰rwise⁴s⁰pecifi⁵e⁰d) ⁶⁰
80
100
150
200 ^Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
Parameter
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
s_Rup_ee_vrim_erp_sos_eed_bo_ren_ara_kte_dd_olo_wa_nd (_vJE_oD_ltE_aC_gm_eethod)
V_(BR)
I_R= 1μA
Typical Thermal Resistance (Note 2)
RΘJA
Test
conditions
Min
30
85
40
Max
Unit
Am
V
℃
Typical Junction Capacitance (Note 1)
ORpervaetirnsgeTevmopltearagteureleRaaknaggee current
Storage Temperature Range
I_R1 ^CJ V_R=75V
TJ
I_R2 TSTGV_R=25V
-55 to +125
120
2
μA
P
-55 to +150
℃
- 65 to +175
0.03
μA
℃
CHARACTERISTICS
SYMBO^IFL⁼F¹M^m12^A0-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM⁷1¹1⁵00-MH FM1150-MH FM1200-MH UN
M_Fa_oxi_rm_wu_am_rdFo_vrw_oa_ltr_ad_gV_eoltage at 1.0A DC
V_F
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VF ^IF^=10mA
I_F=50mA
IR _IF=150mA
0.50
0.70
0.5
10
0.85⁸⁵⁵
1000
1250
0._m9 _V
0.92 Vo
mA
N^DOT^ioE^dS:^{e capacitance}
C_D
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-^RT^eh^ver^em^ra^sl^eRe^rs^eis^cta^on^vc^ee^rF^yro^tm^imJu^enction to Ambient
t _rr
V_R=0 f=1MHz
I_F=I_R=10mA
I_rr=0.1×I_R,R_L=100Ω
1.5
pF
4
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.