BAV70DW Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

WILLAS
S₁O_.0T_A -_S3_U6_RF3_ACP_El_Ma_Os_Ut_Nic_T -_SE_CHn_Oc_Ta_TKp_Ys_Bu_ARla_Rt_IEe_R D_REi_Co_Td_IFe_IEs_{RS -20V- 200V}
SOD-123+ PACKAGE
FM120-M+
BAV70DTWHRU
FM1200-M+
Pb Free Product
SWITCHFIeNaGtuDrIOeDsE
FEATU^•R^BbE_eaS_tttcehr
process
reverse
design,
leakage
excellent
current a
power diss
nd thermal
ipation offers
resistance.
z F^•a^Ls^ot^wS^pw^roi^ftⁱc^leh^sin^ug^rfaS^cepe^me^od^{unted application in order to}
z U_• l_Lotr_opa_wti-^mS_piom^zwea_ebl_rol_laoS^rsu^dsr_,sf_hpa_iagc^che^ee.M_ffio_ciu_en_nct _yP_. ackage
z F^•o^Hr^igG^he^cn^ure^reraⁿl^{t c}P^au^pr^ap^bo^ils^itye^{, l}S^oww^fit^oc^rwhi^an^rg^{d v}A^op^ltp^agli^eca^drti^oo^pn^. s
z H^• i^Hgⁱh^ghC^so^un^rgd^eu^cc^at^pa^an^bc^ile^ity.
• Guardring for overvoltage protection.
z P_•b_U-F_ltrr_ae_he_igp_ha_-c_sk_pea_eg_de_si_ws_ita_cv_ha_ini_gla_. ble
R•oSHilSicopnroedpuitacxt ifaolrpplaancakrinchgipc,omdeetaslusffiliixco”Gn ”junction.
H^•a^Ll^eo^ag^de^-n^frefr^ee^pe^ap^rtr^so^mdu^ec^et^t f^eoⁿr^vp^ira^ocⁿk^min^eg^ntac^lo^sd^te^ans^du^af^rf^dix^s “^oH^f ”
z M_• o_R^Mi_os^I_H^Lt^-_Su^Sr_p^Te_r^D_oS_d^-1e_uc⁹n_t⁵s_f⁰_oit⁰_ri_pv^/2_ait_c²y_k⁸_inL_ge_cv_oe_dl_e1_{suffix "G"}
Halogen free product for packing code suffix "H"
MAKIN_MG_e: K_chJA_{anical data}
Maxim^•u^Em^poR^xya^:t^Uin^Lg⁹s^4-V@⁰T^raa^t=^ed2^f5^la℃^{me retardant}
• Case : Molded plastic, SOD-123H
•
Terminals
:Plated
termPinaarlasm, seoltdeerrable
per
,
MIL-STD-750
Peak Repetitive P^Mea^ek^thR^oe^dv²e⁰r²s⁶e Voltage
Workin^• g^PoP^le^aa^rik^tyR^: e^Inv^de^icrs^ae^teV^do^bl^yta^cg^ae^{thode band}
DC Blo•cMkoinugntiVnog lPtaogseition : Any
Forwa^•rd^WC^eo^ign^ht^tin^{: A}u^po^pu^rs^oxC^imur^ar^te^en^dt^{0.011 gram}
Package outline
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
6 5 4 ^0.056(1.4)
123
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limit
0.031(0.8) Typ.
Unit
V_RRM
100
V_RWM ^{Dimensions in}1ⁱⁿ0^c0^{hes and (millimeters}V⁾
V_R
75
I_FM
300
mA
Average Recti_Mfie_Ad_XO_IMu_Utp_Mut_RC_Aur_Tr_Ie_Nn_Gt _{S AND ELECTRICAL CHARACTERIST}IO_ICS
150
mA
N^Rao^tnⁱⁿ-^gR^se^ap^t e²t⁵i^℃tive^amP^beⁱa^ek^ntF^teo^mrw^pea^rr^ad^turS^eu^urⁿg^lee^sC^s u^otr^hr^ee^rn^wt^{ise specified.}@ t = 1.0µs
2
Single phase half wave, 60Hz, resistive of inductive load.
I_FSM
@ t = 1.0s
1
A
For capacitive load, derate current by 20%
Power Dissipation_RATINGS
SYMBOL
FM120-MH
FM130-MH FM140-MH^PF^DM150-MH
200
FM160-MH FM180-MH
mW
FM1100-MH FM1150-MH FM1200-MH
UN
M_Ta_hrk_ei_rn_mg C_ao_l d_Re_{esistance Junction to Ambient}
12
13
14 _RθJA15
16 625 18
10 _℃/W 115 120
Maximum Recurrent Peak Reverse Voltage
M^Oa^pxi^em^ru^am^tinR^gMS^JuVⁿol^cta^tg^ioe^{n Temperature}
VRRM
20
30
40
50
60
80
100
150
200 Volt
VRMS
14
21
28 ^TJ 35
150
42
56
70 ^℃ 105
140 ^Volt
M_Sa_tx_oim_rau_gm_eD_TC_eB_mlo_pc_eki_rn_ag_tV_uo_rl_etage
VDC
20
30
40 T_ST5_G0
60 -55~+18500
100_℃
150
200 ^Volt
Maximum Average Forward Rectified Current
IO
1.0
Am
ELECTRICAL
Peak Forward Surge
C_CuH_rreA_ntR_8.A_{3 m}C_sT_sE_ingR_leI_hS_aT_{lf s}I_iC_neS_-wa(_vT_ea=2_IF5_SM℃
unless
otherwise
specified)
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal^PR^ae^rs^ais^mta^enc^tee^r(Note 2)
R^SΘ^yJA^mbol
Test conditions
M₄₀in
Max
Unit
℃/W
Typical Junction Capacitance (Note 1)
Op^Re^era^vti^en^rg^sT^eem^bp^reer^aa^ktu^dre^owRaⁿng^ve^oltage
CJ
120
PF
T^VJ (BR)
-55 to +I_R1=252.5µA
75
-55 to +150 V
℃
Storage Temperature Range
Reverse voltage leakage current
CHARACTERISTICS
TSTG
I_R
V_R=75V
- 65 to +175
2.5
µA
℃
SYMBOL FM120-MH FM130-MH^VFRM⁼1²40⁰-M^VH FM150-MH FM160-MH FM180-M⁰H^.F⁰M²1⁵100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
VF
0.I5F0=1mA
0.70
0.7815 5
0.9
0.92 Volt
Ma_Fx_oim_rwum_arA_dve_vra_og_le_taR_ge_everse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR V_F
I_F=10mA
I_F=50mA
0.5
855
mV
10
1000
mAm
NOTES:
1- M^Jueaⁿs^cur^te^iod ⁿat ^c1 ^aM^pH^aZ^caⁱn^tadⁿap^cp^elied reverse voltage of 4.0 VDC. ^Cj
I_F=150mA
V_R=0, f=1MHz
1250
2
pF
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
4
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.