BAV21 Datasheet, PDF (1/2 Pages) Frontier Electronics. – SILICON EPITAXIAL PLANAR DIODE

WILLAS
BAV21
SCS
VOL
0.1AMP Schot
BAV21 SIGNAL DIODE _{Pb Free Product}
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings
Reverse Voltag VRRM 250
Reverse Recovery tr
50
Time
Power Dissipation
P
500
FEATURES
U_*n_Eit_xtremely
Low
Dimensions
VF
(DO-35)
V
* Extremely thin package
ns
* Low stored charge
m^* W^{Majority carrier conduction}
1.02(26.0)
MIN.
.022(0.55)
.018(0.45)
3.33mW/_°C (25_°C)
Forward Current
IF
250 mA
Junction Temp.
Storage Temp.
Tj -65 to 175
Tstg -65 to 175
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
°^C
.153(3.6)
°^C
.132(3.0)
MECHANICAL DATA
* Case:Molded plastic, JEDEC SOD-323(SC-76)
.087(2.2)
.067(1.7)
* Terminal : Solder plated, solderab¹l^.e⁰²p⁽e²r⁶M^.0I⁾L-STD-750,
MIN.
Method 2026
.059 (1.5)
.043 (1.1)
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
SO
.012
C
* Weight : 0.000159 ounce, 0.0045 gram
Electrical Characteristics (Ta=25_°C)
Ratings
Symbol
Ratings
Unit
Marking C
Breakdown Voltage
BV
V
IR= 100uA
Peak Forward Surge Current PW= 1sec.
MAXIMUM R_IFsA_urT_geING AND₁²_.⁵₀⁰ELECTRI_ACAL CHARA
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR=1 50V
Rating 25^oC ambient tempe^Vra^Fture unless otherwise specified.
V
Single phase half wave, 60Hz, resistive of inducti¹v^.e⁰load.
For capacitive load, derate ^Ic^Rurrent by 20%
uA
0.10
VR=150V,Tj= 100_°C
Parameter
15
Conditions
Symb
Maximum Junction Capacitance
Repetitive Peak Reverse Vo^Clt^jage
pF
V_RM
VR= 0, f= 1 MHz
Max Reverse Recovery Time
Continuous Reverse Voltage
trr
1.5
ns
V_R
IF=IR= 30mA, VR= 6V, iR= 3mA,RL= 100_{ΩForward Voltage}
I _F = 10m₅A₀DC
VF
I _F = 100mA DC
VF
Reverse Current
V_R = 10V DC
I_R
Mean Rectifying Current
IO
Peak forward surge current
I_FSM
Capacitance between terminals
CT
Operating Temperature
Storage Temperature
T_J
T_STG
WILLAS ELECTRONIC CORP.