BAV20 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

WILLAS
BAV20
SCS
VOL
0.1AMP Schot
BAV20 SIGNAL DIODE _{Pb Free Product}
Absolute Maximum Ratings (Ta=25_°C)
Items
Symbol Ratings
Reverse Voltag VRRM 200
Reverse Recovery tr
50
FEATURES
Unit
Dimensions (DO-35)
*_VExtremely Low VF
n^* s^{Extremely thin package}
.022(0.55)
.018(0.45)
Time
Power Dissipation
P
500
* Low stored charge
m* MWajority carrier conduction
1.02(26.0)
MIN.
3.33mW/_°C (25_°C)
Forward Current
IF
250 mA
Junction Temp.
Storage Temp.
Tj -65 to 175 _°C
Tstg -65 to 175 _°C
.153(3.6)
.132(3.0)
.059 (1.5)
Mechanical Data
Items
Materials
Package
DO-35
MECHANICAL DATA
.087(2.2)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
1.02(26.0)
* Terminal : Solder plated, solderable pMeIrN.MIL-STD-750,
.043 (1.1)
Case
Hermetically sealed glass
Method 2026
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
SO
.012
C
* Weight : 0.000159 ounce, 0.0045 gram
Electrical Characteristics (Ta=25_°C)
Ratings
Symbol
Ratings
Unit
Marking C
Breakdown Voltage
BV
V
IR= 100uA
200
Peak Forward Surge Current PW= 1sec. MAXIMUM RIFAsuTrgeING AND1.0ELECTRIACAL CHARA
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR=1 50V
Rating
25^oC
ambient
VF
temperature
unless
otherwis₁e_.0specified.
V
Single phase half wave, 60Hz, resistive of inductive load.
IR
uA
For capacitive load, derate current by 20%
0.10
VR=150V,Tj= 100_°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
Parameter
Cj
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage_trr
15
Conditions
pF
1.5
ns
Symb
V_RM
V_R
IF=IR= 30mA, VR= 6V, iR= 3mA,RL= 100_{ΩForward Voltage}
I _F = 10m₅A₀DC
VF1
I _F = 100mA DC
V F2
Reverse Current
V_R = 10V DC
I_R
Mean Rectifying Current
IO
Peak forward surge current
I_FSM
Capacitance between terminals
CT
Operating Temperature
T_J
Storage Temperature
T_STG
WILLAS ELECTRONIC CORP.