BAS70 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Schottky barrier double diodes

WůĂƐƚŝĐͲŶĐĂƉƐƵůĂƚĞ^ǁŝƚĐŚŝŶŐŝŽĚĞƐ
PRIMARY CHARACTERISTICS
P_D
200mV
V_RRM
70V
I_F
70mA
V_F@I_F=1mA
410mV
T_{J Max}
125℃
^ϳϬ
THRU
^ϳϬ^
SOT-23 PACKAGE
BAS70 Marking: 73 BAS70S Marking: 74
BAS70C Marking: 75 BAS70A Marking: 76
FEATURES
 Low Turn-on voltage
 Fast Switching
 Also available in lead free version
 Moisture Sensitivity Level 1
MAXIMUM RATINGS @Ta=25℃
Symbol
Parameter
V_R
DC Voltage
I_F
Forward Continuous Current
P_D
Power Dissipation
RθJA
Thermal Resistance Junction to Ambient
T_J
Operating Temperature
T_stg
Storage Temperature
MECHANICAL DATA
 Case：Molded plastic,SOT-23
 Polarity：Shown above
 Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
 Epoxy : UL94-V0 rated flame
retardant
Value
Unit
70
V
70
mA
200
mW
500
℃
-55~+125
℃
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V_(BR)
I_R= 10µA
Reverse voltage leakag e current = IR VR 50V
Forward voltage
Diode cap acitance
V_F
I_F=1mA
I_F=15mA
C_D
V_R= 0V f= 1MHz
Reveres recovery time
I_F=I_R=10mA,I_rr=0.1xI_R,
t_rr
R_L=100Ω
2014.12
www.willas.com.tw
Min
Max
Unit
70
V
120
nA
410
1000
mV
2
pF
5
ns
Rev.J0ϯ