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| BAS40 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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ϮϬϬŵtWůÄÆÆÅÄͲ ŶÄÄÆÆƵůÄÆÄ^ÄÅŽÆÆŬÇÄÆÆÅÄÆÅŽÄÄÆ
^ϰϬ
THRU
^ϰϬͲϬϲ
PRIMARY CHARACTERISTICS
PD
200mV
VRRM
40V
IF
1mA
VF
380mV
TJ Max
125â
FEATURES
ï¬ Low Forward Voltage
ï¬ Fast Switching
ï¬ Moisture Sensitivity Level 1
Maximum Ratings @Ta=25â
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Thermal resistance junction to ambient
Operating temperature
Storage temperature range
Symbol
VRRM
VRWM
VR
IFM
PD
RθJA
TJ
TSTG
SOT-23 PACKAGE
BAS40 MARKING: 43. / B1 BAS40-06 MARKING: 46 / L2
BAS40-05 MARKING: 45 BAS40-04 MARKING: 44 / CB
MECHANICAL DATA
ï¬ Caseï¼Molded plastic,SOT-23
ï¬ Polarityï¼Shown above
ï¬ Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
ï¬ Epoxy : UL94-V0 rated flame
retardant
Limit
Unit
40
200
200
500
-55~+125
-55~+150
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current
= IR VR 30V
Forward voltage
Diode capacitance
VF
IF=1mA
IF=40mA
= = CD VR 0,f 1MHz
Reverse recovery time
t rr
Irr=1mA, IR=IF=10mA
RL=100â¦
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
2016.07
www.willas.com.tw
Rev.JL02
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