BAS21X Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate Diodes

WILLAS
S₁O_.0AT_S-_U2_R3_FAP_Cl_Ea_Ms_Ot_Uic_NT-E_SCn_Hc_Oa_TTp_Ks_Yu_BAla_RRte_IERD_Ri_Eo_Cd_TIe_FIs_{ERS -20V- 200V}
SOD-123+ PACKAGE
FM120-M+
BAS21x^THRU
FM1200-M+
Pb Free Product
SWITCH^FIN^eG^atD^uIO^reD^sE
• Batch process design, excellent power dissipation offers
FEATUREbSetter reverse leakage current and thermal resistance.
z Fast^•S^Lw^oi^wtc^ph^rin^og^fileSp^se^ue^rfd^{ace mounted application in order to}
optimize board space.
z Surf•acLeowMpoouwntePr laocsksa, gheigIhdeefafilclyieSnuciyt.ed for Automatic Insertion
z For G^{• H}en^ige^hra^cl^uP^rru^erⁿp^to^cs^ae^pS^abw^ilit^itc^yh^, i^ln^og^wA^fop^rp^wli^ac^ra^dti^vo^on^ls^{tage drop.}
z
• High surge capability.
High_• C_Go_un_ad_rdu_rc_it_na_gn_fc_oe_{r overvoltage protection.}
z Pb-F_•r_Uee_ltrp_aa_hc_igk_ha_-g_se_peis_edav_swai_il_ta_cb_hil_ne_g.
RoH^•S^Sp^ilrⁱo^cd^ouⁿc^et^pfⁱo^tar ^xpⁱac^{l p}ki^ln^ag^nac^ro^cd^he^ips^,u^mff^eix^ta”^lG^s”^{ilicon junction.}
Halo^•g^Le^en^af^dre^-fe^rep^ero^pd^au^rtc^st^mfo^er^ep^ta^ecⁿk^viⁱn^rogⁿc^mo^edⁿe^tasu^{l s}ff^ti^axⁿ“^dH^a”^{rds of}
z
MIL-STD-19500 /228
Mois_•t_Ru_or_He_SS_pe_rn_os_duit_ci_tv_fi_ot_ry_pL_ae_ckv_ine_gl 1_{code suffix "G"}
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
BA^• S^P2^o1^{larity : Indicated by cathode}B^bA^aSⁿ2^d1A
BAS21C ^{Dimensions in inches and (millime}B^teA^rsS⁾ 21S
Mar^•ki^Mng^o:^uJⁿS^{ting Position : Any}
Marking:JS2
Marking:JS3
Marking: JS4 RU  -7
• Weight : Approximated 0.011 gram
Maximum Ra_Mtin_Ag_Xs_IM@_UT_Ma=_R2_A5_T℃_{INGS AND ELECTRICAL CHARACTERISTICS}
RSiantginlegsphaat _{s2e5℃halfawmabvieen,} t6t0eHmzp,_Perer_aas_rtiu_asrtmieveeun_toelfe_{risnsduocthtievrewliosaeds.pecified.}
Symbol
Limit
Unit
R^Fe^orp^ce^at^pit^aiv^cie^tivp^ee^la^oak^dr^,e^dv^ee^rar^ts^ee^cuv^ro^reltⁿa^tg^be^{y 20%}
V_RRM
Working peak reve^Rrs^Ae^TIv^No^Glt^Sage
Marking Code
M^Da^Cxi^bm^lu^om^ckRⁱeⁿc^gurr^ve^on^lt^tP^ae^ga^ek Reverse Voltage
M^Foax^ri^wm^aum^rdR^cM^oSⁿV^tioⁿlt^uag^oe^{us current}
SYMBOL FM120-MH FM130-MH _VFM_R1_W4_M0-MH FM150-MH FM160-M₂H₅₀FM180-MH FM1100-MH FM_V1150-MH FM1200-MH UN
12
VRRM
20
13
30
V_41R04
15
50
16
60
18
10
115 120
80
100
150
200 Vol
VRMS
14
21
I_F2M8
35
42 ⁴⁰⁰ 56
70
mA₁₀₅
140 ^Vol
MAavxeimraugmeDrCecBtloifcikeindgoVuotltpaguet current
VDC
20
30
I_O40
50
60 200 80
100
m1A50
200 ^Vol
M_Na_ox_nim_-ru_em_pA_ev_tie_tr_ia_vg_ee _pF_eor_aw_kar_fd_oR_rwec_ati_rfi_ded_sC_uu_rr_gre_ent_current
Peak Forward Surge Current 8.3 ms single half sine-wave
s_Ru_epe_pr_eim_tp_ito_is_ve_ed _pon_er_aa_kted_folo_ra_wd _a(J_rE_dDE_sC_urm_ge_eth_cod_u)_rrent
Typical Thermal Resistance (Note 2)
T^Py^op^wica^el^rJu^dn^isct^sioⁱn^paC^taⁱp^oaⁿcitance (Note 1)
OTpheerramtinaglTreemspisertaatnurceeRjaunngection to ambient
S_Jt_uo_nra_cg_te_ioT_nem_tp_ee_mra_ptu_er_re_aR_tuan_rg_ee
IO_{@ t = 1.0µs}
IFSM^{@ t = 1.0s}
I_FSM
RΘJA
CJ
TJ
I_FRM
P_D
-55 to +12_R5 _θJA
TSTG
T_J
1.₂0_.5
3⁰0^.5
Am
A
Am
625
40
12²0²⁵
mA
mW
℃/W
PF
55
-55 to +150 _℃/W
℃
- 65 t₁o₅+₀175
℃
℃
Storage tempera_Ct_Hu_Ar_Re_Ar_Ca_Tn_Eg_Re_ISTICS
SYMBOL FM120-MH FM130-MH F^TM^S1^T4^G0-MH FM150-MH FM16^-0⁵-M⁵H^~+FM¹1⁵8⁰0-MH FM1100-MH FM1^℃150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
E_ML_aE_xiC_muT_mR_AI_vC_erA_agL_e C_ReH_veA_rsR_{e C}A_uC_rreT_nE_{t a}R_t IS_@T_TI_AC₌₂S_5℃(Ta=25_IR℃ unless otherwise specified)
Rated DC Blocking Voltage
@T A=125℃
Parameter
Symbol
Test conditions
0.5
10
Min
0.85
Max
0.9
Unit
0.92 Vol
mAm
NO_RT_eE_vS_e: _{rse breakdown voltage}
V_(BR)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- ^RTh^ee^vrm^ea^rsl R^ees^vi^ost^la^tn^ac^ge^eFr^lo^em^aJ^ku^an^gct^eion^ct^uo^rA^rm^enbi^tent
I_R
I_R= 100µA
V_R=200V
250
V
0.1
µA
Forward voltage
V_F
I_F=100mA
I_F=200mA
1000
mV
1250
Diode capacitance
C_D
V_R=0V, f=1MHz
5
pF
Reveres recovery time
t_rr
I_F=I_R=30mA,I_rr=0.1×I_R,R_L=100Ω
50
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.