BAS21T Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT FAST SWITCHING DIODE

WILLAS
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SOD-123+ PACKAGE
FM120-M+
BAS21T ^THRU
FM1200-M+
Pb Free Product
SWITCHI^FNG^eatD^uIO^reD^sE
• Batch process design, excellent power dissipation offers
FEATURES_{better reverse leakage current and thermal resistance.}
z Fast^•S^Lw^owitc^ph^roin^fig^le S^sup^re^fae^cd^{e mounted application in order to}
Package outline
SOT-523
SOD-123H
z For G_• e_Loopn_wte^imr_pa^iozl_weP_ebru^olr^aop^rsdo_s,s^shpe_iagS^chew_{e. f}i_ft_ic_ch_iei_nn_cg_y.Applications
z High^•C^Ho^ign^hd^cu^uc^rrt^eaⁿn^tc^ce^{apability, low forward voltage drop.}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z _Pb-F^•_r^H_ee^igh_p^s_a^u_c^r_k^ge_ag^ca_e^pa_is^bi_a^lit_v^y._ailable
• Guardring for overvoltage protection.
RoH•SUpltrroadhuigcht-fsopreepdascwkiitncghincgo.de suffix ”G”
Halo^•g^Seⁱn^{l i c}f^oreⁿe^{e p}p^{i t}r^ao^xd^{i a}u^lc^pt^{l a}fo^{n a}r ^rp^ca^hc^{i p}k^,i^mng^{e t a}c^lo^sd^{i l}e^{i c o}sⁿu^jf^ufiⁿx^c“^{t i}H^{o n}” ^.
• Lead-free parts meet environmental standards of
z Moistu_Mr_ILe_-SS_Te_Dn_-1s₉it₅i₀v₀it_/y₂₂L₈evel 1
• RoHS product for packing code suffix "G"
1
0.071(1.8)
3
0.056(1.4)
2
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
MARKIN^•G^Ep:^oT^x3^{y : UL94-V0 rated flame retardant}
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{Maximum RatingsM@ethToad=220526℃}
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
r _{• Mounting Position : APnayrameter}
Dimensions in inches and (millimeters)
Symbol
Limit
Unit
a _{Peak Re•pWeteitigivhet :PAepapkroRxeimveartesde0V.o01lt1aggream}
V_RRM
Working Peak Reverse Voltage
V_RWM
250
V
in ^{DC Blocking VoMltAaXgeIMUM RATINGS AND ELECTRICAL CHARACTERISVRTICS}
Fo^Rr^aw^tina^grd^{s a}C^t o²⁵n^℃tinu^amou^bis^enC^t u^ter^mre^pn^et^{rature unless otherwise specified.}
Single phase half wave, 60Hz, resistive of inductive load.
Av_Fe_or_ra_cg_ape_aR_cie_tivc_eti_lf_oie_add_, O_deu_ratp_teu_ct_uC_rru_er_nr_te_bn_yt_20%
I_FM
400
mA
I_O
200
mA
lim Non-Repetitive
Marking Code
PeakRFAoTIrNwGaSrd
Surge
Current
SYMBOL
FM1@20-tM=H F1M.013µ0s-MH
12_{@ t = 1}1_.3_0s
FM140-MH FM150-MH
14 ^IFSM 15
FM160-2M.H5
16 _0.5
FM180-MH
18
FM1100-MH
A
10
FM1150-MH
115
FM1200-MH
120
U
Maximum Recurrent Peak Reverse Voltage
P_Mo_aw_xe_imr_uD_mis_Rs_Mi_Spa_Vt_oio_ltan_ge
VRRM
20
VRMS
14
30
21
40
50
28 ^PD 35
60
80
150
42
56
100
150
7^m0 ^W 105
200 V
140 ^V
e _{TMhaexrimmuaml RDeCsBislotcaknincgeVJolutangcetion to Ambient}
VDC
20
30
40 R_θJA 50
60 833 80
10_℃0 _/W 150
200 ^V
r _{OMpaexrimatuimngAvJeurangcetiFoonrwTaerdmRpeectrifaietduCreurrent}
IO
T_J
1₁.₅0 ₀
℃
A
P SPtoearkaFgoerwTaerdmSpuregreaCtuurrreent 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
T_STG
-55~3+0150
℃
A
EL^TTE^yyppC_iiccT_aallR^TJuhI_neC_crmtA_ioanL^{l RC}C^easpH^iasctA^aitnaR^cneA_ce(NC_(NoT^toeE_te2R⁾¹⁾ISTICS (Ta=25^RC℃^ΘJJAunless otherwise specified)
40
120
℃
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage TempPeraartaurme eRtaenrge
TSSTyGmbol
Test conditions
-M6i5n to +175 Max
Unit
Reverse breakdCoHwAnRAvCoTltEaRgIeSTICS
Maximum Forward Voltage at 1.0A DC
SYMBVO_(BL_RF₎ M120-MI_RH=FM110300-μMAH FM140-MH FM150-MH FM126500-MH FM180-MH FM1100-MH FMV1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
MRaexvimeursmeAvvoerlatagegeRelveearskeaCguerrecnutrarten@t T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR ^IR
N^FO^oT^rE^wS^a: ^{rd voltage}
V_F
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V_R=200V
I_F=100mA
I_F=200mA
0.5
100
nA
m
10
1
V
1.25
2T- oThtaerlmcaal RpeascisittaanncecFerom Junction to Ambient
C_T
V_R=0V,f=1MHz
5
pF
Reverse recovery time
t _rr
I_F=I_R=30mA,I_rr=0.1XI_R,
R_L=100Ω
50
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.