BAS21H Datasheet, PDF (1/3 Pages) NXP Semiconductors – Single high-voltage switching diode in small SOD123F package

WILLAS
200mA Surface Mount Switching Diode-250V
1.0A SURFACE MOUNT SCHOTTKYSOBADR-3R2IE3R_PRaEcCkTaIgFIeERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS21_FH_M1^T₂^H₀^R₀^U_-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Lo_Hw p_IGow_Her lo_Vss_O, h_Lig_Th_Aef_Gfici_Eency.
• High current capability, low forward voltage drop.
• HiSghWsurIgTeCcaHpaIbNiliGty. DIODE
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, meta¹l silicon junction.
• Lead-free parts meet environm^Ce^An^Tt^Ha^Ol s^Dt^Eandards of
2
ANODE
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flam^Oe ^Rre^Dta^Er^Rda^INn^Gt ^INFORMATION
• Case : M_Deo_vld_ice_ed plastic, SOD_M-1_a2_r3_kH_ing
Shipping
• TermBinAaSls21:PHlated terminals, sJoSlderable per MIL-3S0T00D/T-7a5pe0,& Reel
Pb-Fre^Me ^ep^ta^hc^ok^da²g⁰e²⁶is available
• PolaRriotyH:SInpdriocdautecdt fboyr cpaatchkoidnegbcaondde suffix ”G”
• MouHnatilnoggPenosfirteioenp:rAondyuct for packing code suffix “H”
• Weig^Mh^otⁱ:^sA^tup^rp^ero^Sx^eim^nsaⁱt^te^ivd^it0^y.0^L1^e1^vg^er^la¹m
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
SOD– 323
0.040(1.0)
0.024(0.6)
MARKING DIAGRAM
0.031(0.8) Typ.
JS
Dimensions in inches and (millimeters)
JS = Device Code
MAXIMUM_MR_AA_XT_IMIN_UGS_{M RATINGS AND ELECTRICAL CHARACTERISTICS} ^{Polarity: Color band denotes cathode end}
Ratings at 25℃ Ramatbiniegnt temperature unless otherwise speScyifmiedb.ol
Value
Unit
Single phaCsoenhtianluf owuasveR,e6v0eHrsze, rVeoslitsatgivee of inductive load. VR
250
Vdc
For capacPitievaekloFaodr,wdaerrdatCeucrurerrnetnt by 20%
IF
200
mAdc
Peak Forwa_Rrd_ATS_Iu_Nrg_Ge_SCurrent
SYMBOL^IFF^MM^(su1^rg2^e0⁾ -MH FM130-M⁶H²F⁵M140-MH FM1^m50^A-M^dcH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximu_Tm_HR_Ee_Rc_Mur_Are_Lnt_CP_He_Aak_RR_Ae_Cve_Tr_Ese_RV_ISo_Tlta_ICge_S
Maximum RMS Volt_Cag_he_aracteristic
Maximum D_TC_otB_al_lo_Dck_ei_vn_ig_ceVo_Dlt_isa_sg_ie_{pation FR–5 Board,*}
VRRM
20
VRMS _Sym1_b4_ol
VDC
PD²⁰
30
40
21 _Max 28
30 ₂₀₀ 40
50
60
3_U5 _nit 42
50_mW 60
80
100
150
200
56
70
105
140
80
100
150
200
Maximum AveTra_Ag=e2F5o°Crward Rectified Current
IO
1.0
Derate above 25°C
Peak Forwar_Td_hS_eu_rmrge_alC_Ru_err_se_in_st_ta8._n3_cm_es_Js_ui_nng_cl_te_ioh_nal_tf_osi_Ane_m-w_bia_ev_ne_t
superimposed on rated load (JEDEC method)
Junction and Storage
Typical The_Trm_emal_pR_ee_rasi_ts_ut_ra_enc_Re_a(_nN_go_ete 2)
Typical Junction Capacitance (Note 1)
Operati^*n^Fg^RT^–e⁵m^Mpⁱeⁿr^imatu^ur^me ^PR^aa^dnge
IFSM
RΘJA
CJ
TJ
RθJA
TJ, Tstg
1.57
635
–55 to+150
-55 to +125
Storage^ET^Le^Em^Cp^Ter^Rat^Iu^Cre^AR^Lan^Cg^He ^{ARACTERISTICS (TA = 2}T⁵S^°T^CG^{unless otherwise noted)}
Characteristic
Symbol
Min
mW/°C
°C/W
30
°C
40
120
-55 to +150
- 65 to +175
Max
Unit
OFF CHARCAHCATREARCTISETRIICSSTICS
Maximum ForRweavrderVsoeltVaogeltaagte1.L0eAaDkCage Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
I R 0.50
0.70
µAdc0.85
0.9
0.92
Maximum Av(eVraRg=e R20e0veVrsdecC) urrent at @T A=25℃
IR
Rated DC Blo(cVkRin=g2V0o0ltaVgdec, TJ = 150°C@) T A=125℃
–
0 0.5
–
100 10
Reverse Breakdown Voltage
NOTES:
(IBR = 100 µAdc)
1- Measured a_Ft 1_orM_wH_aZ_rdan_Vd_oa_ltp_ap_glie_ed reverse voltage of 4.0 VDC.
2- Thermal Re₍s_Ii_Fst₌an₁c₀e₀Fr_mom_AdJu_cn₎ ction to Ambient
V(BR)
VF
250
–
Vdc
mV
–
1000
(IF = 200 mAdc)
–
1250
Diode Capacitance
(VR = 0, f = 1.0 MHz)
C_D
–
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
trr
–
50
ns
2012-06
WILLAS ELECTRONIC COR
2012-1
WILLAS ELECTRONIC CORP.