BAS20H Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – High Voltage Switching Diodes

WILLAS
200mA Surface Mount Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKY_SOBA_DR_-3R₂IE₃R_PR_aE_cC_kT_aI_gFI_eERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS20_FH_M1^T₂^H₀^R₀^U_-M
Pb Free Produc
Features
High Voltage • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
Switching Diode ^{optimize board space.}
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
z_{• G}W_uae_rdd_rie_nc_gla_for_re_ot_vh_ea_rvt _oth_ltae_gm_{e p}a_rt_oe_tr_eia_ctl_ioo_nf_.product
• U_clt_ora_mh_pig_lih_a-_ns_cp_eee_wd _is_thwi_Rtc_ohi_Hng_S. _{requirements.}
• Silicon epitaxial planar chip, metal silicon junction.
•
Pb-Free package is available
Lead-free parts meet environmental
standards
of
M_RIL_o-_HST_SD_p-1_ro9_d50_u0_ct/2_fo2_r8 _{packing code suffix ”G”}
• Ro_HH_aS_lop_gro_ed_nuc_frt_efo_er p_pa_rc_ok_din_ug_cc_t o_fode_r s_pu_aff_cix_ki"_nG_g" _{code suffix “H”}
Halogen free product for packing code suffix "H"
z_MeM_co_his_atu_nre_icS_ae_lns_dit_aiv_ti_aty Level 1
z_•
Polarity: Color band denotes cathode
Epoxy : UL94-V0 rated flame retardant
end
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Ordering^MIn^etf^ho^odrm²⁰a²t⁶ion
• Polarity : Indicated by cathode band
Device
Marking
• Mounting Position : Any
• We^Bi^Agh^St²:⁰A^Hpproximated 0^J.0^R11 gram
Shipping
3000/Tape&Reel
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD– 323
1
CATHODE
0.031(0.8) Typ.
0.040(1.0)
2
0.024(0.6)
ANODE
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUMMRAAXTIMINUGSM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ Ramatbiniegnt temperature unless otherwise speScyifmiedb.ol
Value
Unit
Single phaCsoenhtianluf owuasveR,e6v0eHrsze, rVeoslitsatgivee of inductive load. V_R
200
Vdc
For capacPitievaekloFaodr,wdaerrdatCeucrurerrnetnt by 20%
IF
200
mAdc
Peak Forwa_Rrd_ATS_Iu_Nr_Gge_SCurrent
SYMBOL^IFF^MM^(su1^rg2^e0⁾ -MH FM130-M⁶H²F⁵M140-MH FM1^m50^A-M^dcH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximu_Tm_HR_Ee_Rc_Mur_Are_Lnt_CP_He_Aak_RR_Ae_Cve_Tr_Ese_RV_ISo_Tlta_ICge_S
Maximum RMS Volt_Cag_he_aracteristic
Maximum D_TC_otB_al_lo_Dck_ei_vn_ig_ceVo_Dlt_ia_ssg_ie_{pation FR–5 Board,*}
VRRM
20
VRMS _Sym1_b4_ol
VDC
PD²⁰
30
40
21 _Max 28
30 ₂₀₀ 40
50
60
3_U5 _nit 42
50_mW 60
80
100
150
200
56
70
105
140
80
100
150
200
Maximum Ave_Tra_Ag₌e₂F₅o_°Crward Rectified Current
IO
1.0
Derate above 25°C
Peak Forward Surge Current 8.3 ms single half sine-wave
Thermal Resistance Junction to Ambient
superimposed on rated load (JEDEC method)
Junction and Storage
Typical The_Trm_emal_pR_ee_rasi_ts_ut_ra_enc_Re_a(_nN_go_ete 2)
Typical Junction Capacitance (Note 1)
IFSM
RΘJA
CJ
RθJA
TJ, Tstg
1.57
635
–55 to+150
Operati^*n^Fg^RT^–e⁵m^Mpⁱeⁿr^imatu^ur^me ^PR^aa^dnge
TJ
-55 to +125
Storage^ET^Le^Em^Cp^Ter^Rat^Iu^Cre^AR^Lan^Cg^He ^{ARACTERISTICS (TA = 2}T⁵S^°T^CG^{unless otherwise noted)}
mW/°C
°C/W
30
°C
40
120
- 65 to +175
-55 to +150
Characteristic
Symbol
Min
Max
Unit
OFF CHARCAHCATREARCTISETRIICSSTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum For_Rw_ea_vrd_erV_so_elt_Va_oge_ltaa_gt _e1._L0_eA_aD_kC_{age Current}
VF
I R 0.50
0.70
µAdc0.85
0.9
0.92
Maximum Ave(VraRg=e R20e0veVrsdecC) urrent at @T A=25℃
IR
Rated DC Blo(cVkRin=g 2V0o0ltaVgdec, TJ = 150°C@) T A=125℃
–
1.0 0.5
–
100 10
Reverse Breakdown Voltage
NOTES:
(IBR = 100 µAdc)
1- Measured a_Ft 1_orM_wH_aZ_rdan_Vd_oa_ltp_ap_glie_ed reverse voltage of 4.0 VDC.
2- Thermal Re₍s_Ii_Fst₌an₁c₀e₀Fr_mom_AdJu_cn₎ ction to Ambient
V(BR)
VF
200
–
Vdc
mV
–
1000
(IF = 200 mAdc)
–
1250
Diode Capacitance
CD
–
5.0
pF
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
trr
–
50
ns
(IF = IR = 30 mAdc, RL = 100 Ω)
2012-06
WILLAS ELECTRONIC COR
2012-1
WILLAS ELECTRONIC CORP.