BAS19W Datasheet, PDF (1/3 Pages) Transys Electronics – SURFACE MOUNT FAST SWITCHING DIODE

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
B_BAASS12_F90_MWW_T1H2R0U-M+
BAS2_F1_MW_1200-M+
Pb Free Product
Features
SWITCH^• I^BN^aG^{tch p}D^roIO^ceD^ssE^{design, excellent power dissipation offers}
FEATURE^bS^{etter reverse leakage current and thermal resistance.}
z Fas^•t ^LoS^opw^wtimi^ptc_irzoh_efiⁱn_bleog^sauS_rdrp^fase_pce^ead_cmeo. ^{unted application in order to}
Package outline
SOT-3_S2_O3_D-123H
z Sur^•fa^Lc^oe^w M^poo^wu^en^r t^loP^ssa^,c^hk^iga^hg^ee^ffiI^cd^ieeⁿa^cl^yly^. Suited for Automatic Insertion
z For^••G_HHe_iiggn_hhe_scr_uua_rrl_greP_encu^tacr_pp^aapo_bas_ible_iitlyiS^t.yw^{, lo}it^wch^foin^rwg^aA^rdp^vp^oli^ltc^aa^gt^eio^dn^ros^p.
z Hig•hGCuoanrddriuncgtfaonr coevervoltage protection.
0.146(3.7)
0.130(3.3)
z Pb-^•F^Ure^lte^rap^ha^igc^hk^-a^spg^ee^edis^swav^itca^hilⁱa^ngb^.le
RoH^• S^Sip^licro^ondu^ec^pt^itafo^xr^iap^l a^plc^akⁿi^an^rg^cc^hio^pd^, e^mes^tu^af^lf^six^ili”^cG^on” ^junction.
• Lead-free parts meet environmental standards of
1
HalogMeInL-fSrTeDe-p19ro5d0u0c/2t 2fo8r packing code suffix “H”
z Moi^•s^Rtu^oHre^S S^pre^odn^us^ci^tt^fi^ov^ri^pty^acL^kie^ngve^col^d1^{e suffix "G"}
Halogen free product for packing code suffix "H"
2
Mechanical data
Marking• :EBpoAxSy :1U9LW94-V0KraAte8d flamBe rAetSa2rd1aWnt KT3
• CBasAeS: M20olWded plaKsTtic2, SOD-123H
,
Maximu^• m^TerR^maⁱⁿt^ain^lsg^:Ps^la@^teT^d a^te=^rm25ⁱⁿ℃^{als, solderable per MIL-STD-750}
0.031(0.8) Typ.
Method 2026
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : _PIn_ad_ri_aca_mte_ed_teb_ry cathode band
Symbol BAS19W
BAS^D2^im0^enW^{sions in inc}B^heA^s S^an2^d1^(mW^illimeters)
• Mounting Position : Any
Peak R_•ep_We_et_ii_gti_hv_te_{: A}R_pe_pv_re_or_xs_ime _aV_to_el_dta₀g_.0e_{11 gram}
V_RRM
100
150
250
DC Blocking Voltage
V_R
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Average Rectified Output Current
I_O
200
Ratings at 25℃ ambient temperature unless otherwise specified.
P_So_inw_ge_ler _pD_hi_as_ss_eip_ha_alt_fio_wn_{ave, 60Hz, resistive of inductive load.} Pd
200
TFhoerrcmapaalcRitievseilsotaadn, cder.aJteuncucrtrieonnt btyo2A0m%bient
R_θJA
625
Unit
V
mA
mW
℃/W
Junction TemperatRurAeTINGS
SYMBOL TF_JM120-MH FM130-MH FM140-MH FM150₁-M₅H₀FM160-MH FM180-MH FM1100-MH FM1℃150-MH FM1200-MH UN
S^Mt^ao^rkraⁱⁿg^ge^CoT^de^emperature Range
Maximum Recurrent Peak Reverse Voltage
T_STG¹²
13
14 _-51₅5_~+15016
VRRM
20
30
40
50
60
18
10
1_℃15
120
80
100
150
200 Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Vo
E^ML^aE^xC^imT^umR^DIC^CA^BlL^ockCⁱⁿH^g A^VoR^ltaA^geCTERISTICS (Ta=2^V5^D℃^C unle²s⁰s oth³e⁰rwise⁴s⁰pecif⁵ie⁰d) ⁶⁰
80
100
150
200 ^Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
Peak Forward S_Pur_age_raC_mur_ere_tn_et_r8.3 ms single half sine-wave _{IFSM Symbol}
Test conditions
3^M0 ⁱⁿ
Max
Unit
Am
superimposed on rated load (JEDEC method)
T^Ryp^eic^va^el ^rT^sh^eerm^bra^el R^akes^dis^ota^wnⁿce^v(^oN^lo^tt^ae^g2^e)
BAS19W_RΘJA
40¹⁰⁰
℃/
Typical Junction Capacitance (Note 1)
BAS20W^CJ V(BR)
I_R= 100µA
12₁0₅₀
V
P
Operating Temperature Range
BAS21W^TJ
-55 to +125
250
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
M^Rax^eim^veu^rm^sF^eo^vrw^oa^ltrd^agV^eolt^la^eg^ae^ka^at^g1^e.0A^cuD^rC^rent
BAS19W
V_R=100V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
BAS20W_VF
I_R
V_R=15₀0_.5V₀
0.70
0.8⁰5^.1
µ₀A_.9
0.92 Vo
Maximum Average Reverse Current at @T A=25_B℃_AS21WIR
V_R=200V
0.5
mA
Rated DC Blocking Voltage
@T A=125℃
10
NO^FT^oE^rS^w: ^{ard voltage}
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-^DTⁱh^oe^drm^eal ^cR^aes^pis^ata^cn^itc^aeⁿF^cro^em Junction to Ambient
V_F
I_F=100mA
I_F=200mA
C_D
V_R=0V, f=1MHz
1
V
1.25
5
pF
Reveres recovery time
t_rr
I_F=I_R=30mA,I_rr=0.1×I_R
50
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.