BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

WILLAS
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SOD-123+ PACKAGE
BAS19^FM_T¹_H²_R⁰_U^-M+
BAS20_FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
SWITCHINbeGtteDr rIeOvDerEse leakage current and thermal resistance.
SOT_S-_O2_D3_-123H
FEATUR^•E^LS^{ow profile surface mounted application in order to}
optimize board space.
z F_• a_Ls_owt S_pow_wit_ec_rh_loin_sg_s, S_hip_ge_h e_ed_fficiency.
z S^• u^Hr^igfa^hc^ce^urM^reo^ntu^cn^at^pP^aba^ilc^itk^ya^{, l}g^owe ^fI^od^re^wa^al^rl^dy^vS^olu^tait^ge^ed^df^ro^opr ^.Automatic Insertion
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
z F^• o^Hr^igG^h e^sun^re^gr^ea^cl^aP^pau^brp^ilio^tys^. e Switching Applications
• Guardring for overvoltage protection.
z H• UiglhtraChoignhd-supceteadnscweitching.
z P^• b^S-^ilF^icr^oeⁿe^ep^pa^itc^ak^xia^ag^{l p}e^lais^naa^rv^ca^hi^ipla^, b^ml^ee^{tal silicon junction.}
R^• o^LMeH_IaLS^d-S-p^fTrr^eDo^ed_-1pu_9ac_5rt^t0sf₀o^mr_/2ep_2ea_8tc^ekⁿin^vig^rocⁿo^md^ee^nts^au^l f^sfi^tx^an”^dG^a”^{rds of}
1
0.071(1.8)
0.056(1.4)
3
2
H^{• R}al^oo^Hg^Se^pn^rofr^de^ue^ct p^for^ro^pd^au^cc^kitⁿf^go^cr^op^da^ec^sk^ui^fn^fixg^"c^Go^"de suffix “H”
z _MH_oa_islo_tg_ue_rn_efr_Se_ee_np_sro_id_tiu_vc_it_tf_yor_Lp_ea_vck_ein_l g₁code suffix "H"
Mechanical data
Marking•:EBpAoxSy 1: U9L94-JVP0 rated flame retardant
0.040(1.0)
0.024(0.6)
• CBasAeS: 2M0oldedJpRlaostric,AS8O0D-123H
,
Maximu^•m^TeR^rmaⁱtⁿi^an^lsg^:s^Pl@^ateT^da^t=^er2^m5ⁱ℃^{nals, solderable per MIL-STD-750}
y _{Method 2026}
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
r _Parameter
• Mounting Position : Any
Symbol
BAS19
Dimensions in inches and (millimeters)
BAS20
Unit
a _{Non-Re•peWtietiigvhetP: AeapkprRoxeivmeartseed V0.o0l1ta1ggeram}
V_RM
100
150
V
in ^{DC Blocking VoMltAagXeIMUM RATINGS AND ELECTRIVCRAL CHARACTERISTICS}
Av_Re_ar_tia_ng_gse _aR_t e₂c_5℃tifie_ad_mbO_ieu_nt_tp_tu_emt C_peu_rr_ar_tue_rn_et_{unless otherwise specifie}IO_d.
200
mA
PoSwingelreDphisaseiphaatlifownave, 60Hz, resistive of inductive load. Pd
200
mW
Th^Fe^orrm^caa^pl^aR^cie^tivs^eis^lota^an^d,c^de^e.^rJ^atu^en^cc^ut^ri^ro^en^nt t^bo^y A²⁰m^%bient
lim JunctionTemperaturReATINGS
Marking Code
S_Mto_ar_xa_img_ue_mT_Re_em_cup_rre_er_na_t t_Pu_er_ae_k R_Rea_vn_eg_rse_{e Voltage}
R_θJA
625
℃/W
SYMBOL FM1_T20_J-MH FM130-MH FM140-MH FM1₁5₅0-₀MH FM160-MH FM180-MH FM110_℃0-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115 120
VRRM
2^T0^STG 30
40 ^-55⁵0^~+150 60
80
100^℃
150
200 V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Vo
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200 ^Vo
r _{ELMEaxCimTuRmIACvAeraLgeCFHorAwaRrdARCecTtifEieRd CISurTreInCt S (Ta=25I℃O unless otherwise specified) 1.0}
A
P Peak Forward S_Pu_arg_re_amCu_err_te_en_rt 8.3 ms single half sine-wave _{IFSM Symbol}
Test conditions ³⁰ Min
Max
Unit
A
superimposed on rated load (JEDEC method)
T_Ry_epi_vc_eal_rT_sh_ee_brm_ra_el_aR_ke_ds_ois_wtan_nce_vo(N_lto_ate_ge2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
BA^RS^Θ1^J9^A
BAS^C2^J0
TJ
V_{(BR) R} I_R= 100µA
-55 to +125
40 ₁₀₀
℃
120 _{150 -55 to +150}
V
P
Storage Temperature Range
Reverse voltage leakage current
BA_TS_ST1_G9
I_R
VR=100V
BAS20
VR=150V
- 65 to +175
0.1
µA
CHARACTERISTICS
M_Fa_ox_rim_wu_am_rdFo_vrw_oa_ltr_ad_gV_eoltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
R_Ja_ute_nd_cD_tiC_onBl_coc_ak_pin_ag_cV_ito_alt_na_cge_e
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
V_F
I_F=1₀0_.50₀mA
I_F=200mA
IR
0.70
0.5
0.85 ¹
0.9_V
0.92 V
1.25
m
C_J
V_R=0V, f=1MHz
10
5
pF
NOTES:
1^R- M^ee^va^es^ru^ere^sd ^ra^et ^c1 ^oM^vH^eZ^ra^ynd^timap^eplied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
t_rr
I_F=I_R=30mA,I_rr=0.1×I_R
50
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.