BAS16X Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Swithching Diode

WILLAS
SOD-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16X^THRU
FM1200-M+
Pb Free Product
Swithchi_Fng_eD_ai_to_ud_re_es
FEATUR^• E^BS^{atch process design, excellent power dissipation offers}
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better reverse leakage current and thermal resistance.
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Package outline
SOD-523
SOD-123H
z Le^oa^ptd^imF^izin^ei^bs^oh^a:^r1^d 0^sp0^a%^ceM^. atte Sn ( Tin )
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• Low power loss, high efficiency.
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0.146(3.7)
0.130(3.3)
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Mechanical data
MARKIN_{• E}G_p:_oA_xy6_{: UL94-V0 rated flame retardant}
Maximu_• m_CaR_sea_:t_Min_og_lds_eda_pn_ld_asE_ticl_,e_Sc_Otr_Dic_-1a₂l₃C_Hharacteristics,
Single
Diode
@Ta=25℃
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Pa_Mr_ea_tm_hoe_dte₂r₀₂₆
Symbol
Limit
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Unit
• Polarity : Indicated by cathode band
DC Reverse Voltage
V_R
• Mounting Position : Any
Dimensions in inches and (millimeters)
75
V
Forwar•dWCeuirgrhetn:tApproximated 0.011 gram
I_F
200
mA
Pak Forward S^Mur^Ag^Xe^IC^Mu^Urr^Men^Rt ^{ATINGS AND ELEC}I_F^T_M^R_(su^IC_rge^A₎ ^{L CHARACTERISTIC}5^S00
mA
Ratings at 25℃ ambient temperature unless otherwise specified.
TSoitnaglleDpehvaisceehDailfswsaipvae,ti6o0nHz, resistive of inductive load. P_D
150
mW
For capacitive load, derate current by 20%
Thermal Resistance_RAJ_Tu_In_Nc_Gt_Sion to Ambient
SYMB^ROL^θJF^AM120-MH
FM130-MH FM140-MH
833
FM150-MH
FM160-MH
FM180-MH
FM1100-MH^℃F^/M^W1150-MH FM1200-MH
UN
J^Mu^an^rkcⁱⁿt^gio^Cn^oda^end Storage Temperature
Maximum Recurrent Peak Reverse Voltage
VRR^TM^j
,T_stg
12
20
13
30
14
1¹5⁵ 0
16
40
50
60
18
80
10
100
℃
115
150
120
200 Vo
Maximum RMS Voltage
E_Mle_ac_xit_mr_uic_ma_Dl_CR_Ba_lot_ci_kn_ing_gs_Vo@_ltaT_gea=25℃
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
56
70
105
140 ^Vo
80
100
150
200 ^Vo
Maximum Averag_Pe_aF_ro_arw_ma_erd_teR_rectified Current
IO
Symbol Min Typ
Max
Unit
1.0
Conditions
Am
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
Rsuepveerimrspeosbedreonakradteodwlonadv(JoEltDaEgCemethod)
V_(BR)
75
30
Am
I_R=100uA
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
V_{F1 CJ}
715
120
I_F=1mA
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
V_FT2STG
855
- 65 to +175 ^IF^=10mA
℃
Forward voltage
mV
CHARACTERISTICS
V_{SF3YMBOL FM120-MH FM130-MH F}1_M0₁₄0₀0_{-MH FM150-MH FM160-MH FM180}I_-F_M=_H5_F0_Mm₁₁A_{00-MH FM1150-MH FM1200-MH UN}
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @T A=25℃
V_F4
IR
Rated DC Blocking Voltage
@T A=125℃
Reverse recovery Time
t_rr
0.50
1250
6.0
0.70
ns
0.85
0.9
0.5
I_F=150mA
10
I_F=I_R=10mAdc,R_L=50Ω
0.92 Vo
mA
NOTES:
1R-eMveearssureedcaut r1rMenHZt and applied reverse voltage of 4.0 VDI_RC.
1.0 μA
V_R=75V
2- Thermal Resistance From Junction to Ambient
Forward recovery voltage
V_FR
1.75
V
I_F=10mA, t_r= 20ns
Diode capacitance
C_D
2.0
pF
V_R=0V,f=1MHZ
Stored charge
Q_S
45
pC
I_F=10mA, V_R=5.0V ,R_L=500Ω
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.