BAS16W Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16W_THRU
FM1200-M+
Pb Free Product
SWITCHING DIODE
Features
FEATU_• R_BE_atS_{ch process design, excellent power dissipation offers}
Package outli_Sn_Oe_T-323
z F^ba^es^ttt^eS^{r r}w^evi^etc^rsh^ein^leg^akS^agp^ee^ce^ud^{rrent and thermal resistance.}
• Low profile surface mounted application in order to
z FooprtimGiezenbeoraarldPsuparcpeo. se Switching Applications
SOD-123H
z ^•H^Li^og^wh^pC^owo^en^rd^lou^sc^s,ta^hin^ghce^efficiency.
• High current capability, low forward voltage drop.
z _{•PHbi-gFhresuergpeaccakpaagbeilitiys. available}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•_RG_ou_Ha_Srd_pri_rn_og_df_uo_cr _to_fv_oe_rrv_po_alt_ca_kg_ie_ngpr_co_ote_dc_etio_sn_u._{ffix ”G”}
•_HU_al_lt_ora_geh_nigh_fr-_es_epe_pe_rd_os_dw_ui_ctc_t h_foin_rg_p. _{acking code suffix “H”}
z
• Silicon epitaxial planar chip, metal silicon junction.
•^ML^oeⁱa^sd^tu-f^rr^eee^Sp^eaⁿrt^ss^itm^iveⁱe^tyt e^Ln^evi^vr^eon^l m¹ ental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
1
0.071(1.8)
0.056(1.4)
3
2
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Marking• :CasAe 2: Molded plastic, SOD-123H
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _Maximum
Ratings and
Method
Electrical
2026
Characteristics,
Single
Diode
@Ta=25℃
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
r • Polarity : Indicated by cathode band
Parameter
• Mounting Position : Any
a Non-Repetitive
• Weight
Peak Reverse Voltage
: Approximated 0.011 gram
Symbol
V_RM
Limit
100
Dimensions in inches and (millimeters)
Unit
V
Peak Repetitive Peak Reverse Voltage
V_RRM
in Working Peak^MRe^Av^Xe^Ir^Mse^UV^Mol^Rta^Ag^Te^{INGS AND ELE}V^C_R^T_W^R_M ^{ICAL CHARACTE}7^R5^ISTICS
V
DRCatBinlgoscakti2n5g℃Voamltabigeent temperature unless otherwise sVpe_Rcified.
R^SMⁱⁿS^gleR^pe^hv^ae^sr^es^he^aV^lfo^wl^ata^vg^e,e^{60Hz, resistive of inductive}
For capacitive load, derate current by 20%
loa_Vd_R. _(RMS)
53
V
lim Forward Continuous Current
RATINGS
A_Mv_ae_rkr_ina_gg_Ce_oR_deectified Output Current
SYMB^IO^FML
300
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
FM180-MH
mA
FM1100-MH
FM1150-MH FM1200-MH
UN
I_{O 12}
13
1₁₄50 ₁₅
16
18
m₁A₀
115 120
P^Me^aa^xik^muF^mor^Rw^ea^cur^rd^reS^ntu^Pr^eg^ae^k C^Reu^vr^er^re^sn^e t^V@^oltat=^ge1.0μs
VRRM
20
30
e _{Maximum RMS Voltage}
@t =1.0s
VRM^IS^FSM 14
21
r _PM_oa_wxim_eu_rm_DD_isC_sB_iplo_ac_tk_ioin_ng Voltage
VDC_PD 20
30
T^Mh^ae^xir^mm^umal^AR^ve^ers^ai^gs^eta^Fn^orc^we^arJ^du^Rn^ec^ct^tii^fo^ien^{d C}to^urA^rem^nt bient
IO_RθJA
4₂0_.0 50
2₁8_.0 35
2⁴⁰00 ⁵⁰
625
60
80
100
42
56
A₇₀
60
80
m¹W⁰⁰
1.0
℃/W
150
200 Vo
105
140 ^Vo
150
200 ^Vo
Am
P _{JPueankcFtoiorwnarTdeSmurgpeeCruartruenrte8.3 ms single half sine-wave IFSM Tj}
150
30
℃
Am
superimposed on rated load (JEDEC method)
Storage Temperature
Typical Thermal Resistance (Note 2)
RΘJA^TSTG
-55~+150
40
℃
℃/
E^TL^yE^piC^caT^{l J}R^unI^cC^tioAⁿL^CaC^paH^ciA^taR^ncA^{e (}C^NoT^teE¹R⁾ ISTICS
Operating Temperature Range
(Ta=25^CT℃_JJ
unless
o_-5th₅ e_tor₊w₁i₂s₅e
specified)
120
-55 to +150
P
℃
Storage Temperature Range
Parameter
TSTG
- 65 to +175
℃
Symbol
Test conditions
Min
Max
Unit
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
MRaxeimveurmsFeobrwrearadkVdooltawgne avto1l.t0aAgDeC
VVF(BR)
I_R= 10µA 0.50
0.70 75
0.85
V0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
R_Rat_eed_veD_rC_seBlo_vc_ok_lin_tag_gV_eol_lt_eag_ae_{kage curren}@_tT A=125℃
I_R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-FToherwrmaarl RdevsiostlatnacgeeFrom Junction to Ambient
V_F
V_R=75V
V_R=20V
I_F=1mA
I_F=10mA
I_F=50mA
0.5
10
1
µA
mA
25
nA
0.715
0.855
V
1
I_F=150mA
1.25
Diode capacitance
C_D
V_R=0, f=1MHz
2
pF
Reveres recovery time
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
4
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.