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BAS16V Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE
WILLAS
SOT-563 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16TVHRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SWITC•HLINowGprDoIfiOleDsuErface mounted application in order to
optimize board space.
FEATU•RLEowSpower loss, high efficiency.
z F•asHtigShwcuitrcrehnint cgaSpapbeileityd, low forward voltage drop.
z F•orHiGghesnuerrgaelcPapuarpbiolistye. Switching Applications
• Guardring for overvoltage protection.
z H•igUhltrCa ohnigdhu-scpteaendcsewitching.
z P•bS-Filriceoen eppaitcakxaiagl pelainsaar cvhaipil,ambeletal silicon junction.
R•oLHMeISaLd-pS-frTroeDde-1up9ca5trt0fs0omr/2ep2ea8t ceknivnirgoncmoednetasl ustfafinxd”aGrd”s of
H•aRloogHeSnprfordeuectpforropdaucckitngfocrodpeascukffiinxg"Gc"ode suffix “H”
z
Halogen free product for packing code suffix "H"
MMoisetcurheaSneincsaitilvdityaLtaevel 1
• Epoxy : UL94-V0 rated flame retardant
Markin•gC:aKseA:MMolded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
SOD-123H
SOT-563
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
6 51 4
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
1 23
0.031(0.8) Typ.
Method 2026
Maxim•uPmolaRriatyti:nIngdsic@ateTdab=y2c5a℃thode band
Dimensions in inches and (millimeters)
• MountingPParoasmitieotne:rAny
Symbol
Limit
Unit
• Weight : Approximated 0.011 gram
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak RepetitivMeAPXeIaMkURMeveRrAseTIVNoGltaSgAeND ELECVTRRRMICAL CHARACTERISTICS
WRaotirnkgisngat P25e℃ak aRmebvienrst teemVopeltraagtuere unless otherwise sVpReWcMified.
75
V
DSiCngBlelophcaksineghaVlfowltaavgee, 60Hz, resistive of inductive load. VR
RFoMr ScaRpaecviteivreseloaVdo,ldtaegraete current by 20%
VR(RMS)
53
V
Forward ContinuouRsATCINuGrrSent
Marking Code
MAavxeimraugmeRReceucrrteifnitePdeaOkuRtepvuetrsCe uVrorlteanget
SYMBOIFLMFM120-MH FM130-MH FM13400-0MH FM150-MH FM160-MH FM180-MH FMm11A00-MH FM1150-MH FM1200-MH UN
12
13
14
15
16
18
10
115 120
VRRMIO 20
30
42000 50
60
80
m10A0
150
200 Vol
MPaexaimkuFmoRrwMSarVdolStaugrege Current @t=1.0μs
VRMS
14
21
228.0 35
42
Maximum DC Blocking Voltage
IFSM
@t =1.0s
VDC
20
30
410.0 50
60
56
70
105
140 Volt
A
80
100
150
200 Volt
MPaoxwimeurmDAivsesraipgaetFioornward Rectified Current
IO PD
150
1.0
mW
Am
PTehaek rFmorwaal rRd eSusrigsetaCnurcreentJ8u.3nmcstisoinnglteohaAlfmsinbei-ewnavte IFSMRθJA
833
30
K/W
Am
sJuupenrcimtpioosnedToenmrapteedrlaotaudr(eJEDEC method)
TSytpoicraalgTeheTrmeaml Rpeesriasttaunrcee (Note 2)
Typical Junction Capacitance (Note 1)
Tj
RΘJA
CJ
TSTG
150
℃
-55~+150
40
120
℃
℃/W
PF
EOLpEerCatiTngRTIeCmApeLratCurHe RAaRngAe CTERISTICS
Storage Temperature Range
(Ta=T2ST5TJ℃G
unless
-55 to +125
otherwise
specified)
- 65 to +175
-55 to +150
℃
℃
ParaCmHAeRteArCTERISTICS
SYSMyBmOLboFMl 120-MH FTMe1s3t0-MHcFoMn1d4i0t-ioMnHsFM150-MH FM160M-MiHn FM180-MMH aFxM1100-MH FMU11n5i0t-MH FM1200-MH UNI
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Vol
MaRxeimvuemrsAevebrraegeakRdeovewrsne vCourlrteangt eat @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IVR (BR)
NORTeESv:erse voltage leakage current
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Forward voltage
VF
IR= 100µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
07.55
V
mAm
10
1
µA
25
nA
0.715
0.855
V
1
IF=150mA
1.25
Diode capacitance
CD
VR=0, f=1MHz
2
pF
Reveres recovery time
2012-06
2012-1
IF=IR=10mA,Irr=0.1×IR,
trr
RL=100Ω
4
ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.