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BAS16TW1T1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-363 Plastic-Encapsulate Diodes
WILLAS
SOT-363 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16TW1TTH1RU
FM1200-M+
Pb Free Product
Features
SWITCH• BINatGchDprIoOcDesEsSdesign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
FEATURoEpStimize board space.
• Low power loss, high efficiency.
z Fa•sHt iSghwcitucrhreinntgcSappaebeildity, low forward voltage drop.
z Fo•r HGigehnseurraglePcauprapboislitey.Switching Applications
z Hig• hGuCaordnrdinugcftoar nocveervoltage protection.
• Ultra high-speed switching.
z We• iSgilhicto:0n .e0p5itagxial planar chip, metal silicon junction.
z Ro•HLSeapdr-ofredeupcat rftosrmpeaect ekninvgirocnomdeentsaul sfftaixnd"Gar"ds of
MIL-STD-19500 /228
Ha•lRoogHeSnpfrroedeucpt froor dpauccktinfgocropdae csukfifnixg"Gc"ode suffix "H"
z MoiHsatulorgeenSfreenespirtoidvuicttyfoLrepvaceklin1g code suffix "H"
Mechanical data
MARKING: BAS16TW1T1: KA2·
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOSDO-1T23-3H63
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Maximu• mCasRea:tMinogldsed@plTasAt=ic2, 5S℃OD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
ParMaemtheotedr2026
Symbol
0.031(0.8) Typ.
Limits
0.031(0.8) Typ.
Unit
Non-Re•pPeotliatirvitey P: Ienadkicraetevderbsyecvaothltoadgeeband
VRM
100
Dimensions in inches and (millimVeters)
Peak R•eMpeotuitnitvinegPPeoaskitrioenve: Arsney voltage
VRRM
Workin•gWPeeigahktR: AepvperrosxeimVoatletadg0e.011 gram
VRWM
75
V
DC Blocking MVAoXltIaMgUeM RATINGS AND ELECVTRRICAL CHARACTERISTICS
RRMatSingRseavte2r5s℃e Vaomltbaiegnet temperature unless otherwiseVsRp(ReMcSif)ied.
53
V
FSoinrgwlearpdhaCsoe nhtailnf wuoavues, 6C0uHrzr,ernetsistive of inductive
For capacitive load, derate current by 20%
load.IFM
300
mA
Average Rectified Output Current
RATINGS
PMearakkingfoCrowdaerd surge current @=1.0μs
Maximum Recurrent Peak Reverse Vo@ltag=e1.0s
IO
150
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
IFSM 12
13
124.0 15
16
18
A10
115 120
VRRM
20
30
410.0 50
60
80
100
150
200 Vo
PMoaxwimeurmDRisMsSipVaotlitaogne
VRMSPd 14
21
TMhaxeirmmumalDRCeBsliosctkainngcVeoJltaugnection to Ambient VDCRθJA 20
30
JMuanxicmtuiomnAvteermagpeeFroartwuarred Rectified Current
IO Tj
22800 35
46025 50
150
42
56
60
80
1.0
m7W0
K1/W00
℃
105
140 Vol
150
200 Vol
Am
SPetoakraFogrewatredmSuprgeeraCtuurrreent 8.3 ms single half sine-wave IFSTMSTG
-65~+150
30
℃
Am
superimposed on rated load (JEDEC method)
ETleypcictarliTchaelrmRaal Rteinsigstasnc@e (TNAot=e225) ℃
Typical Junction Capacitance (Note 1)
RΘJA
CJ
40
℃/
120
PF
Operating TempePraaturraemReanteger
SymTbJol Min. -55 tToy+p1.25 Max. Unit
Co-n55dittoio+n15s0
℃
RSteovraegreseTeBmrpeearaktduorewRnanVgoeltage
V
TSTG
(BR) R
75
V - 65 to +175 IR=10μA
℃
CHARACTERISTICS
SVYFM1 BOL FM120-MH FM130-MH FM1040.7-M1H5FM150-MVH FM160-MH FM180-MIHF=FM11m10A0-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
FMoaxriwmaumrdAvvoerlatagegeReverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
VFV2 F
VFI3R
VF4
0.50 0.855
1.0
1.25
V0.70
V
0.5
10
V
I0F.=8510mA
0.9
IF=50mA
IF=150mA
0.92 Vo
mA
NOTES:
1R- eMveeasrusreedcaut 1rrMeHnZt
and
applied
reverse
voltage
of
4.0
VDICR.1
2- Thermal Resistance From Junction to Ambient
IR2
1
μA
25
nA
VR=75V
VR=20V
Capacitance between terminals
CT
2
pF
VR=0V,f=1MHz
Reverse Recovery Time
trr
4
ns
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.