BAS16LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – CASE 31808, STYLE 8 SOT23 (TO236AB)

WILLAS
FM120-M+
BAS16LT1 ^THRU
SO_1.0T_A-_S2_U3_RFP_ACl_Ea_Ms_Oti_Uc_N-_TE_Sn_CHc_Oa_Tp_TKs_Yu_Bl_Aa_Rt_Re_IED_{R R}io_ECd_Te_IFs_{IERS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ƽ • _PL_bow_-Fp_rero_efi_ple_as_cu_kr_afa_gc_ee _im_so_au_vn_ate_ild_aba_lp_eplication in order to
R^oo^ptH^imS^izp^ero^bd^ou^ac^rdt f^so^pr^ap^ca^ec^. king code suffix ”G”
• Low power loss, high efficiency.
• ^HH^aig^loh^gc^euⁿrr^fe^rn^et^ec^pa^rp^oa^db^uil^cit^ty,^folo^rw^pafo^cr^kwⁱⁿa^grd^cv^oo^dl^etag^sue^fd^fir^xo^“p^H. ^”
ƽ
•
M_Ho_igis_ht_su_ure_rgS_ee_cn_as_pi_ati_bv_ii_lt_iy_ty.Level
1
DE^•V^GIC^uE^arM^drAⁱⁿR^gK^foIN^{r o}G^veA^rN^voD^ltO^agR^eD^pE^roR^teIN^ctG^ioIⁿN^. FORMATION
• Ultra high-speed switching.
Device
Marking
Package
Shipping
• Silicon epitaxial planar chip, metal silicon junction.
•^BL^Ae^Sa¹d⁶-^Lfr^Te¹e parts meet ^Ae⁶nvironment^Sa^Ol s^Tt^-a²n³dards³o⁰⁰f ^0/Tape&Reel
MIL-STD-19500 /228
MA_•XRIMoHUSMprRodAuTcItNfoGr Spacking code suffix "G"
Halogen free product for packing code suffix "H"
Mec^Rh^aa^tinn^gical data ^Symbol
Value
Unit
Continuous Reverse Voltage
V_R
75
Vdc
•_PeE_ap_ko_Fx_oy_r:_wU_arL_d9_C4_u-V_rr0_enr_tated
flame
r
e_It
a
F
r
d
a
n
t
200
mAdc
•_PeC_aa_ks_Fe_o:_rwM_ao_rl_dd_Se d_urp_gl_ea_Cs t_ui c_rr,_eS_ntO D - 1_I 2_FM3₍H_surge)
500
mAdc
,
• Terminals :Plated terminals, solderable per MIL-STD-750
THERMAL CHA_MR_etA_hC_odT₂E₀R₂I₆STICS
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
1
2
SOT–23
3
CATHODE
0.031(0.8) Typ.
3
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
1 ^0.024(0.6)
ANODE
0.031(0.8) Typ.
• Polarity :CInhdaircaactteerdisbtyiccathode band
Symbol
Max
Unit Dimensions in inches and (millimeters)
•^ToM^tao^lu^Dn^eti^vn^icg^eP^Do^iss^sit^ipio^an^tio:ⁿA^Fn^Ry ^{– 5 Board, (1)}
•^TW^{A =}e²ig⁵h^°Ct : Approximated 0.011 gram
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal_MRe_As_Xist_Ia_Mnc_Ue_M, Ju_Rnc_Ati_Ton_INto_GA_Smb_Aie_Nnt_{D ELECTR}R_{ICθJAAL CHARA}55_C6_TERIST°C_IC/W_S
Ratings^Ta^ot^ta2^l5^D℃^evia^cm^e b^Diⁱe^sn^st^ipt^ae^tm^iopⁿerature unless otherwise specif^Pie^Dd.
300
mW
Single p^Ah^la^us^meⁱⁿh^aal^Sf ^uw^ba^sv^te^ra,^t6^e0^, H⁽²z⁾,^Tr^Ae⁼sis²t⁵iv^°Ce of inductive load.
For capa^Dc^eit^ri^av^te^e l^ao^ba^od^v, ^ede²r⁵a^°t^Ce current by 20%
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and S^Rto^Ar^Tag^INe^GT^Semperature
Marking Code
R_θJA
417
°C/W
SYMBOL_TF_J M_{, T}12_st0_g-MH FM_–1₅3₅0-M_toH₊F₁M₅1₀40-MH F_°M_C150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
18
10
115 120
MaxiEmLumECRTecRuIrCreAntLPeCaHk AReRvAerCseTVEoRltaISgeTICS (T A = 2V5R°RCMunless2o0therwis3e0noted) 40
50
60
80
100
150
200 V
Maximum RMS Voltage _{Characteristic}
Maxi_Omu_Fm_F D_CC_HB_Alo_Rck_Ain_Cg _TV_Eol_Rta_Ig_Se_TICS
VRMS
1_S4_ymbol 21
M²⁸in
35 _Max42
VDC
20
30
40
50
60
56_Unit 70
80
100
105
140 ^V
150
200 ^V
Maximum _RAv_ee_vr_ea_rg_se_e F_Vo_or_lw_taa_gr_ed _LR_ee_ac_kti_afie_gd_e C_Cu_ur_rr_re_en_nt_t
IO
I_R
1.0 µAdc
A
Peak Forwa^(Vrd^RS⁼ur⁷g⁵e^VC^du^crr⁾ent 8.3 ms single half sine-wave
superimpos⁽e^Vd^Ro⁼n r⁷a⁵te^Vd^dlo^ca^,d^T(J^JE⁼D¹E⁵C⁰m^°Ce⁾thod)
IFSM
—
1.0
—
50 ³⁰
A
Typical Th⁽e^Vrm^Ra⁼l R²⁵es^Vis^dta^cn^, c^Te^J(⁼No¹t⁵e⁰2^°)^C)
Reverse Breakdown Voltage
TOyppeircaatlinJgun_(FTIc_oeBt_rim_Ro_w=np_ae1C_rrd0aa0tVpua_oµreclAti_atR_da_{gcane)ncege(Note} 1)
Storage Te_(Im_Fp₌er₁a_.t₀ur_me _AR_da_cn₎ge
RΘJA
CJ
TJ
TSTG
—
V _(BR)
75
-55 to +125
V_F
—
30 ₄₀
— 120 Vdc
-55 to +150
- 65 to +175 ^mV
715
℃
(I _F = 10 m_CA_Hd_Ac_R) _ACTERISTICS
Maximum F^(Io^Fr⁼wa⁵r⁰d ^mVo^Alt^da^cg⁾e at 1.0A DC
Maximum ⁽A^Iv^Fe⁼ra¹g⁵e⁰R^mev^Ae^dr^cs⁾e Current at @T A=25℃
Diode Capacitance
Rated DC ₍B_Vlo_Rc₌kin₀g_{, f}V₌olt₁a_.g₀e_MHz)
@T A=125℃
—
855
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50 ^—
0¹.7⁰0⁰⁰
0.85
0.9
0.92 V
—
1250
IR
0.5
m
C_D
—
2.0 10
pF
NOTES: ^{Forward Recovery Voltage}
1- Measured(IaFt=1 1M0HmZ Aanddc,atppr =lie2d0rnevse)rse voltage of 4.0 VDC.
V _FR
–-
1.75
Vdc
2- Thermal ^RRe^es^vis^et^ra^sn^ece^RF^er^co^om^veJ^ru^ync^Ttⁱi^mon^eto Ambient
(I _F = I _R = 10 mAdc, R _L = 50 Ω)
t _rr
—
6.0
ns
Stored Charge
(I _F = 10 mAdc to V _R= 5.0Vdc, R _L = 500 Ω)
Q_S
—
45
pC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.