BAS16H Datasheet, PDF (1/4 Pages) Weitron Technology – Surface Mount Switching Diode

WILLAS
200mA Surface Mount Switching Diode - 75V
1.0A SURFACE MOUNT SCHOTTK_SY_OBA_DR_-3R₂IE₃R_PR_aE_cC_kT_aI_gF_eIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16H_FM1^T₂^H₀^R₀^U_-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
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• Sciolimcopnlieapnitcaexiawl ipthlaRnaorHchSipr,emqeutiarel smiliecnontsj.unction.
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ƽ P^Mo^ILla^-r^Sit^Ty^D: C^-1o⁹lo⁵r⁰b⁰a^/n²d²d⁸enotes cathode end
DEV^•IC^RHE^oaHlM_oSgA_epnR^rofK_rdeI^uN_ectG_pfrooA^rdpN_uacD^{ct kf}O_oinrR^gpD_acocE_kdR_ienI_gsN^ucG^fofidxI_eN^"GsF_u"O_ffiR_x M_"HA_" TION
MDeeviccehanical data Marking
Shipping
•BEApSo1x6yH: UL94-V0 rated flameAr6etardant
3000/Tape&Reel
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD -323
0.040(1.0)
0.024(0.6)
MAX^•IM^CaU^sM^{e :}R^MA^oT^ldIN^eG^d S^{plastic, SOD-123H}
,
• Term_Ri_an_ta_inls_g:Plated terminals, solderable pe_Sr M_ymIL_b-S_olTD-750 _Value
Continuous Re^Mve^er^ts^he^oV^do²lt⁰a²ge⁶
VR
75
P^•ea^Pk^olF^ao^rr^itw^ya^:rd^InC^diu^cr^are^ten^dt ^{by cathode band}
IF
200
P•eaMkoFuonrtwinagrdPSousritgieonC:uArrneynt
I FM(surge)
500
0.031(0.8) Typ.
Unit
Vdc
1
CATHODE
0.031(0.8) Typ.
2
ANODE
mAdc^{Dimensions in inches and (millimeters)}
mAdc
THE^•R^WM^eAⁱL^ghC^{t :}H^AA^pR^prA^oC^xiT^mE^aR^teIS^d T⁰I^.C⁰¹S^{1 gram}
Characte_Mris_At_Xic_{IMUM RATINGS AND ELE}S_Cy_Tm_Rbo_ICl _{AL CHA}M_Ra_Ax _CTERISTU_In_Cit_S
Rating^Ts^oa^tat^lT2^D_A5^e℃_=v2ic5a^e°m_CDb^isie^sn^ipt^ate^tiomⁿp^Fer^Ra^-t⁵ur^Be^ou^an^rl^de^,s^*s otherwise sp^Pec^Dified.
200
Single_Dp_eh_ra_as_tee _ah_ba_olf_vw_ea₂v₅e_°,_C60Hz, resistive of inductive load.
1.57
For ca_Tp_ha_ec_rit_miv_ae_l l_Roa_ed_s,_isd_tae_nra_ct_ee_Jc_uu_nr_cre_tin_ot_nb_ty_o 2_A0_m%_bient
R θJA
635
mW
mW/°C
°C/W
Operating/Junct^Rio^An^Ta^INnd^GSStorage Temperature^SYMT^BJ^O,^LT^FMst¹g^{20-MH F}-^M55¹³to⁰+^-M1^H50^{FM140-MH FM}°C^{150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
Marking**FCRo-4dMeinimum Pad
12
13
14
15
16
18
10
115 120
Ma_Exim_LEum_CTR_Rec_Iu_Crr_Aen_Lt P_Ce_Ha_Ak R_Re_Ave_Cr_Tse_EV_Ro_Il_Sta_Tge_{ICS (T A = 25°}V_CRR_uM_{nless ot}2_h0_{erwise n}3_o0_ted) 40
Maximum R_CM_hS_arV_ao_clt_ta_eg_re_istic
VRMS
14
21
28
Symbol
Maximum DC Blocking Voltage
OFF CHARACTERISTICS
Maximum Average Forward Rectified Current
Reverse Voltage Leakage Current
VDC
20
30
40
IO
IR
50
35
Min
50
60
42
Max
60
1.0
80
100
56
70
Unit
80
100
µAdc
150
200
105
140
150
200
Peak Forw(aVrdRS=urg7e5CVudrrce)nt 8.3 ms single half sine-wave
superimpo(sVedRo=n r7a5teVd dloca,dT(JJED=E1C50m°eCth)od)
IFSM
—
1.0₃₀
—
50
Typical Th(VermRa=l R25esVisdtacn,cTe J(N=o1te520)°C)
RΘJA
—
30 40
Typical JuRnecvtieornsCeaBpraecaitkadnocew(nNVotoelt1a)ge
Operating(ITBeRm=pe1r0at0urµeARdacn)ge
CJ
V (BR)
75
—¹²⁰ Vdc
TJ
-55 to +125
-55 to +150
Storage T_Fe_om_rp_we_ara_rdtur_Ve_oR_lta_an_gg_ee
TSTG
VF
- 65 to +175
mV
(I F = 1.0 mAdc)
(I F = 10 m^CA^Hd^Ac^R)^ACTERISTICS
Maximum₍F_I o_Frw₌ a₅r₀d V_mo_Alt_dag_ce₎ at 1.0A DC
Maximum₍A_{I F}ve₌ra₁g₅e₀R_mev_Ae_drs_ce₎ Current at @T A=25℃
Rated DC_DB_iol_do_eck_Cin_ag_pV_ao_cl_it_ta_ag_ne_ce
@T A=125℃
—
715
SYMBOL FM120-MH FM130-MH FM140-MH FM_—150-MH FM1₈6₅0₅-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
— ^0.70 1000
0.85
0.9
0.92
IR
—
125⁰0^.5
CD
—
2.¹0⁰
pF
NOTES: ^{(V R = 0, f = 1.0 MHz)}
1- MeasuFreodrwata1rdMRHZecaonvdearpyplVieodltraegveerse voltage of 4.0 VDC.
V FR
—
1.75
Vdc
2- Therm(aIlFR=es1is0tamncAe dFcro, mt rJ=un2c0tionnsto) Ambient
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
t rr
—
4.0
ns
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
QS
—
45
pC
2012-06
2013-07
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.