B772 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor

WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
B772 ^THRU
FM1200-M
Pb Free Produ
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISTO_• R_Loop（_wtimP_pioN^zweP_eb）_{rolaorsds,shpiagchee. fficiency.}
FEATURES^{• High current capability, low forward voltage drop.}
• High surge capability.
Low speed_• s_Gw_uait_rc_dh_rii_nn_gg_{for overvoltage protection.}
Pb-Free pa^••c_SUk_illta_ircag_ohne^igei^hps^-itsaa^pxev_iaea_ldi_pl^sla_awnb^itacl_re^hcinhgip. _{, metal silicon junction.}
RoHS prod^•u^Lc^et^af^do^-r^frep^ea^pc^ak^ri^tn^s g^mec^eo^t d^ene^vis^rouⁿf^mfix^en”^tG^al”^{standards of}
MIL-STD-19500 /228
Halogen fre_•e_Rop_Hr_So_pd_ru_odc_ut_ctfo_for_{r p}p_aa_cc_kik_ngin_cg_odc_eo_sd_ufe_fixs_"Gu_"ffix “H”
Halogen free product for packing code suffix "H"
Package outline
SOT-89
1. BASE
SOD-123H
0.146(3.7)
0.130(3.3)
123
2. COLLETOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3. EMITTER
Mechanical data
MAXIMUM_• R_EpA_oT_xyIN_{: U}G_LS₉₄(_-T_Va₀=_r2_a5_te℃_{d fl}u_amnl_ee_rs_es_taro_dt_ah_ne_t rwise noted)
0.040(1.0)
0.024(0.6)
Symbol ^{• Case : Molded} P^pla^ar^sa^tm^ic,e^Ste^Or^D-123H
Value Uni_,t
• Terminals :Plated terminals, solderable per MIL-STD-750
V_CBO
Collector-Base Voltage
Method 2026
-40
V
y _VCEO
• P^Co^ola^llr^eit^cy^to: ^rI^-n^Ed^micⁱa^ttt^ee^rd^Vb^oy^ltc^aa^gt^ehode band
-30
V
r _VEBO
• M^Eo^muⁱn^ttt^ein^r-g^BP^ao^ss^eit^Vio^on^lt:^aA^gn^ey
-5
V
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
I_C
• WCeoilglehct t:oArpCpurorrxeimnta-tCeodn0t.i0n1u1ougsram
-3
A
a _PC
Collec_Mto_Ar _XP_Io_Mw_Uer_MDi_Rss_Aip_Ta_It_Nio_Gn _{S AND ELECT}0_R.5_{ICAL C}W_{HARACTERISTICS}
in ^{RӨJARatings atT2h5e℃rmaalmRbeiseinsttatnecmep,ejurantcutrioenutnoleAsmsboitehnetrwise sp2ec5i0fied. ℃ /W}
T_j Single phaJsuenhcatilof nwaTveem, 6p0eHrazt,urreesistive of inductive load. 150
℃
T_stg ^{For capac}S^itit^vo^era^log^ae^d,T^de^em^rap^te^er^ca^ut^ru^rr^ee^{nt by 20%}
-55~150 ℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
lim ^{Marking Code}
12
13
14
15
16
ELECT_MR_axI_imC_uA_mL_ReC_cuH_rrA_enR_{t P}A_eC_akT_RE_evR_erI_sS_eT_VI_oC_ltaS_ge(Ta=25℃ u_VRn_Rl_Mess o₂t₀herwis₃₀e spec₄i₀fied) ₅₀
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
e _MaximumPa_Dr_Cam_Bloe_ct_ke_inr_{g Voltage}
VRMS
14
21
28
35
42
56
70
105
140
Symbol
VDC
Test conditions
20
30
40
M₅₀in
6^T0 ^yp 80^Max 100^Unit 150
200
Colle_Mc_at_xo_imr-_ub_mas_Ae_veb_rar_ge_ea_Fk_od_rwo_aw_rdn_Rv_eo_ctl_it_fa_ieg_de_Current V(BR)CBO _IO IC=-100μA ,IE=0
-40
1.0
V
r Collector-emitter breakdown voltage
Peak Forward Surge Current 8.3 ms single half
sin^Ve-⁽w^BRa⁾v^Ce^EO
IFSM
I_C= -10mA , I_B=0
-30
30
V
P _{Emitstuepre-rbimapsoesebdroenaraktdedolwoand (vJoEDltEaCgemethod) V(BR)EBO}
I_E= -100μA,I_C=0
-5
V
Colle^Tc^ypto^icr^alc^Tu^ht^e-^ro^mf^af^lc^Ru^er^sr^ise^tanⁿt^{ce (Note 2)}
Colle^Tc^ypto^icr^alc^Ju^unt-^co^tioffⁿc^Cu^ar^pr^ae^cn^itat^{nce (Note 1)}
Operating Temperature Range
Emit_Ste_tor_rac_gu_et_T-o_emff_pc_eu_rar_tr_ue_ren_Rt _ange
I_CBO
I_CEO
I_EBO
RΘJA _{VCB= -40V, IE=0}
CJ
TJ
V_CE=-30V_-,₅I_5B=_to0₊₁₂₅
TSTG ^VEB^{=-6V, I}C⁼⁰
40
-1
μA
120
-10_{-55 to +15}μ₀A
- 65 to +175 -1
μA
DC current gain
CHARACTERISTICS
Colle_Mc_at_xo_imr-_ue_mm_Fi_ott_rwer_ars_da_Vt_ou_ltr_aa_gt_eio_an_{t 1}v_.0o_Alt_Da_Cge
h_FE
V_CE= -2V, I_C= -1A
60
400
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V_{CE(sat) VF} I_C=-2A, I_B= -0.2A_0.50
0.70
-0₀.5_.85
V _0.9
0.92
BaseM-aexmimiuttmerAsveartaugreaRtieovnersveoCltuargreent at @T A=V25B℃E(sat) _IR
Rated DC Blocking Voltage
@T A=125℃
Transition frequency
NOTES:
f_T
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I_C=-2A, I_B= -0.2A
V_CE= -5V, I_C=-0.1A
f =10MHz
0.5 -1.5
10
80
V
MHz
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h_FE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.