A1015 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP General Purpose Transistors

WILLAS
SOT₁-_.2_0A3_SURP_FAla_CEs_Mti_Oc_U-_NE_Tn_Sc_CHa_Op_Ts_TKu_Yl_Ba_At_Re_RT_IEr_Ra_Rn_ECs_Ti_Is_FIt_Eo_RSrs_{-20V- 200V}
SOD-123+ PACKAGE
FM120-M
A1015 ^THRU
FM1200-M
Pb Free Produ
Features
TRANSISTOR^{• Ba}(P^tcN^h P^pr)^{ocess design, excellent power dissipation offers}
better reverse leakage current and thermal resistance.
FEATURES ^{• Low profile surface mounted application in order to}
optimize board space.
• Low power loss, high efficiency.
z High volt^•a^Hgⁱe^gha^cn^ud^rrehⁿi^tg^ch^apc^au^bir^lir^tye^,n^lot^{w forward voltage drop.}
• High surge capability.
z Excellent_{• Gu}h_aFrEdriL_ngin_foe_ra_or_vi_ety_{rvoltage protection.}
z Low nios^•e^{Ultra high-speed switching.}
z Pb-Free _••p_LSa_eic^laick_do-a^nfrg_eee_epipti^aas^xrita^aslv_mpa^leai_enl_ta^aeb^rncl_vhe_{iripo,nmmeetnatlaslislitcaonndjaurndcstioofn.}
RoHS prod^Mu^ILc^-t^Sf^To^Dr^-1p⁹a⁵c⁰k⁰i^/n²g²⁸code suffix ”G”
• RoHS product for packing code suffix "G"
Halogen fr_He_ae_logp_er_no_fd_reu_ec_pt_rof_do_ur_ctp_foa_rc_pk_ai_cn_kg_ingc_co_od_dee_ss_ufu_fixff_"i_Hx_"“H”
Package outline
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
• Epoxy : UL94-V0 rated flame retardant
MARKING: BA
• Case : Molded plastic, SOD-123H
MAXIMUM RA^•T^TeIN^rmGⁱⁿS^al(^sT^:Pa=^la2^te5^d℃^teu^rmnⁱⁿle^as^lss^{, s}o^ot^ldh^ee^rarw^bleis^pe^ern^Mo^It^Le^-Sd^T)^D-750,
y _{Method 2026}
Symbol _{• Polarity : Indicated by cathode b}P_aa_nr_dameter
0.031(0.8) Typ.
0.024(0.6)
0.031(0.8) Typ.
D^Vim^ae^luns^eions in inches and (m^Uilliⁿmⁱe^tters)
r _VCBO
a _VCEO
• Mount_Cin_og_llP_eo_cts_oit_ri_-o_Bn_a:_sA_en_Vy_oltage
• Weigh_Ct :_oA_llp_ep_ctr_oo_rx_-i_Em_mat_ite_ted_r0_V.0_o1_lt1_agg_eram
-50
V
-50
V
in ^VEBO
EMmAitXteIrM-BUaMseRVAolTtaIgNeGS AND ELECTRICAL CHARACTERISTICS -5
V
I_C
Ratings at 25℃_Ca_om_llebi_ce_tn_ot_rte_Cm_up_rre_era_nt_tu_-r_Ce _ou_nnl_te_ins_us_oo_uth_serwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
P_{C For capacitive lo}C_ao_dl_,le_dc_et_ro_ar_teP_co_uw_rree_nr_tD_bi_yss₂i₀p_%ation
150
mA
200
mW
lim ^TJ
Juncti_Ro_An_TT_INem_GSperature
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH F¹M²1⁵60-MH FM180-MH FM110^℃0-MH FM1150-MH FM1200-
T_stg ^{Marking Code} Storage Temperature
Maximum Recurrent Peak Reverse Voltage
12
13
14
15 -55-11625
18
VRRM
20
30
40
50
60
80
ELECTMRaIxCimAumLRCMHS AVoRltaAgeCTERISTICS (Ta=25℃ uVnRlMeSss ot1h4erwis2e1 spec2if8ied) 35
42
56
10_℃
100
70
115 120
150
200
105
140
e _{Maximum DC Blocking Voltage}
r _{MaximuPmaAravemraegteerForward Rectified Current}
VDC
Symb_Io_O l
20
30
40
Test conditions
50
60
80
100
150
200
Min _1.0Typ
Max Unit
P ^{CollePcetaokr-FborawsaerdbSruergaekCduorrwennt 8v.3omltsasginegle half sine-wVav(eBR)CB}_IF^O_SM ^{IC= = -100u A,IE 0}
-50
30
V
Colle^sc^ut^po^er^ri-^me^pm^osit^et^de^orⁿb^rar^te^ea^dk^lod^ao^d w^(JEn^Dv^Eo^Cl^mta^eg^the^od)
V_(BR)CEO
I_C= = -0.1mA, I_B 0
-50
V
Typical Thermal Resistance (Note 2)
RΘJA
40
Emitt_Te_yr_p-_ib_caa_ls_Je_unb_cr_tie_onak_Cd_ao_paw_cin_tanv_co_elt₍a_Ng_ote_{e 1)}
V(BR)EB_{CO J}
I_E= = -100 u A, I_C 0
-5
120
V
Colle^Oct^po^err^ac^tinu^gt-^To^ef^mf ^pc^eu^rarr^tue^rn^et^Range
Storage Temperature Range
Collector cut-off current
I_CBO^TJ
TSTG
I_CEO
= V_CB= -50^-V⁵⁵,I^to_E ⁺0¹²⁵
V= _CE= -50V , I_B 0
- 65 to +175
-5_-5_0.t₁o +150 _{u A}
-0.1
uA
Emitter cut-off curren^Ct^{HARACTERISTICS}
Maximum Forward Voltage at 1.0A DC
I_E^S_B^Y_O^MBOL= ^FV^M_E¹²_B⁰=^--^MH5V^F,^M1I³_C^0-M0^{H FM140-MH}
VF
0.50
FM150-MH FM160-MH
0.70
FM180-MH F_-0M_.1₁100-MH
0.85
F_uM_A1150-MH
0.9
FM1200-M
0.92
DC cu_Mr_ar_xe_imn_ut _mga_Ai_vn_{erage Reverse Current at @T A=25℃} hFE _IR
Colle^Rc^ato^ter^d-e^Dm^C i^Btt^loe^cr^kisⁿa^gt^Vu^or^la^tat^gio^en voltage ^{@T A=125}V^℃CE(sat)
V_CE= -6V,I_C= -2mA
I_C=-100 mA, I_B= -10mA
130 _0.5
10
400
-0.3
V
Base^N-e^Om^TEi^Stt^:er saturation voltage
V_BE(sat)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I_C=-100 mA, I_B= -10mA
Trans^2-it^Tio^hen^rmf^ar^le^Rq^eu^sie^stn^ac^ncy^{e From Junction to Ambient}
V_CE= -10V,I_C= -1mA
f_T
80
f=30MHz
-1.1
V
MHz
CLASSIFICATION OF h_FE
Rank
Range _2012-06
2012-0
L
130-200
H
200-400
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.