8550XLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
1.0^GA S^eURⁿF^eAC^rE^aM^lO^PUN^uT ^rS^pCH^oOT^sT^eKY
Transistors
BARRIER RECTIFIERS
-20V-
200V
SOD-123+ PACKAGE
FM120-M+
8550xLT1 _THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
PNP Silicon ^{optimize board space.}
• Low power loss, high efficiency.
F• EHAigThUcRuErrent capability, low forward voltage drop.
SOD-123H
0.146(3.7)
0.130(3.3)
•_WH_eig_dh_es_cu_larg_ree _tc_ha_ap_ta_thb_eili_mty._{aterial of product compliance with RoHS requirements.}
•_PG_bu_-Far_rd_er_ein_pg_afo_cr_ko_av_ge_erv_io_slt_aa_vg_ae_ip_laro_bt_le_ection.
••_RSUoillHtirca_Sohnpige_rohp_d-its_{uapcxeitaefldopr}slaw_pnaita_ccr_khc_ii_nnh_ggip._{c, omdeetasl usfilfiicxo”nGj”unction.}
•^HL^ae^la^od^g-^efrⁿee^frep^ear^pts^rom^de^ue^ct^te^fn^ov^rir^po^an^cm^keⁱⁿn^gta^cl ^os^dta^end^suar^ffd^ixs o^“Hf ^”
MIL-STD-19500 /228
DE^• V^RI^oC^HE^S M^prA^odR^uK^ctIN^foG^{r p}A^acN^kD^ingO^cR^odD^eE^sR^ufI^fN^ixG^"GI^"NFORMATION
Halogen free product for packing code suffix "H"
M^Dee^vic^cehanical data ^Marking
Shipping
8_•5_E50_pP_oL_xT_y1_{: UL94-V0 rated flam}8_e5P_retardant
3000/Tape&Reel
SOT– 23
8_•5_C50_aQ_seLT_: 1_{Molded plastic, SOD1-Y1D23H}
3000/Tape&Reel
,
8^•5^T5^e0^rR^mLⁱTⁿ1^{als :Plated terminals}₁^,_Y^s_F^{olderable per MIL-ST}₃^D₀^-₀⁷₀⁵_/⁰_Tape&Reel
Method 2026
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
MA^• X^MI^oM^uUⁿM^tinR^g A^PT^oI^sN^itG^ioS^{n : Any}
• WeightR: aAtpinpgroximated 0.011 gram
Symbol Value
Unit
Collector-Emitter Voltage
V CEO
25
V
Collector-B^Mas^Ae ^Xvo^Il^Mta^Uge^{M RATINGS AND ELE}V^C_CB^T_O^RICAL4^C0 ^HARACV^TERISTICS
COLLECTOR
3
RatinEgms iattte2r-5b℃aseamVobliteangtetemperature unless otherwiseVsEpBeOcified. 5
SinglCeoplhleacsteorhcaulfrrweanvt-ec,o6n0tiHnuz,oruensistive of inductive loadI.C
800
V
mAdc
1
BASE
For cTaHpaEcRitiMveAlLoaCdH, AdeRraAteCTcuErRreInStTbICy S20%
C h a r a c t e r i s t i c_{R A T IN G S}
Markin^Tg^otC^ao^l d^De^{evice Dissipation FR- 5 Board (1)}
Maxim^Tu^Am⁼R²e⁵c^°u^Crrent Peak Reverse Voltage
Maxim^Du^em^raR^teM^aS^bV^oo^vl^eta²g⁵e ^°C
Maxim^Tu^hm^erD^mC^alB^Rlo^ec^skⁱi^sn^tg^anV^co^elt^,ag^Je^{unction to Ambient}
Total Device Dissipation
Maxim_Au_lm_umA_inve_ara_Sg_ue_bF_sto_rr_aw_tea_,rd₍₂R_{) T}ec_Ati₌fie₂d₅C_°Current
2
S^SYM^ymBO^bL^oF^l M120-^MMH^axFM130-MH^UFⁿM^it140-MH FM150-MH FM160-MH FM180-MEHMFITMT1E1R00-MH FM1150-MH FM1200-MH
PD
12
13
14
15
16
18
10
115 120
VRRM
20 ²²⁵ 30 ^mW40
50
60
80
100
150
200
VRMS
14 ^1.8 21 ^{mW /°C}28
35
42
56
70
105
140
VD^RC^θJA
20 ⁵⁵⁶ 30 ^°C/W40
50
60
80
100
150
200
PD
IO
300
mW
1.0
Peak F^Do^erw^raa^tr^ed ^aS^bur^og^ve^eC²u⁵rre^°Cnt 8.3 ms single half sine-wave
superim^Thp^eos^rmed^ao^l n^Rr^ea^ste^isd^taloⁿa^cd^e(^,JE^JD^unE^cC^tim^onet^th^ood^A)^mbient
IFSM
R θJA
2.4
mW /°C
417
°C/W
Typica^Jl^uTⁿh^ce^tir^omⁿa^al R^ndes^Sis^tt^oa^rn^ac^ge^e(N^Teo^mte^p2^e)^rature
T_RΘJ _J,_AT stg -55 to +150
°C
Typica^Dl ^EJu^Vn^Ic^Cti^Eon^MC^Aa^Rpa^Kc^Ii^Nta^Gnce (Note 1)
CJ
Operati⁸n⁵g⁵T⁰e^Qm^Lp^Te¹ra⁼tu¹r^Ye ^DRange^{8550PLT1 =85P}
TJ
-55 to +125
StoragEeLTEeCmTpeRraICtuAreLRCanHgAe RACTERISTICS (T A = 25TS°CTGunless otherwise noted)
30
40
120
- 65 to +175
-55 to +150
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARA^CC^HT^AE^RR^AIS^CTT^EIC^RS^ISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maxim_Cu_om_lleF_co_tr_ow_ra_-Erd_mV_ito_telta_r g_Be_rea_at _k1_d.0_oA_wD_nC_Voltage
VF
Maxim_(Iu_Cm₌A₁v_.e₀r_mag_Ae₎Reverse Current at @T A=25℃
IR
Rated_ED_mC_itB_telo_r-c_Bki_an_sg_eVo_Blt_ra_eg_ae_{kdown Voltag}@_e T A=125℃
(I
NOTES:
E
=
100µA)
Collector-Base Breakdown voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(I C= 100µA)
2- Ther_Cm_oa_ll_leR_ce_ts_ois_rta_Cn_uc_te_oF_ffro_Cm_urJ_ru_en_nc_ttion to Ambient
(VCB = 35 V)
0.50
0.70
0.85
0.9
V (BR)CEO
25
– _0.5 –
V
V (BR)EBO
5
10
–
–
V
V (BR)CBO
40
–
–
V
I CBO
–
–
150
nA
0.92
Emitter Cutoff Current
(VEB =4V)
I EBO
–
–
150
nA
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-^2012-06
WILLAS^WE^IL^LLE^AC^STR^EO^LEN^CIC^TRC^OO^NR^ICP.^COR