8550HXLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
8550H^FX^ML¹T1^20-M+
THRU
1G.0AeSUnReFArCaE MlOPUNuT rSCpHoOTsTKeY BTARrRaIEnR sREiCsTItFoIERrSs-20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
PNP Silicon • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• H_Fig_Eh_As_Tur_Ug_Re _Ecapability.
• Gu_ƽar_Hd_ir_gin_hg_cufo_rrr_eo_nv_t e_cr_av_po_al_cta_ityge_inp_cr_oo_mte_pc_at_cio_{t p}n_a. _ckage.
• Ultra_Ih_Ci₌g₁h_.-₅s_Ap_.eed switching.
• Sili_ƽco_En_pie_tap_xit_iaa_lx_pia_lal_np_al_ra_tn_ya_pr_ec_. hip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL^ƽ-S^PNTD^P-^c1^o9^m5^p0^l0^em/2^e2ⁿ8^{t: 8550H}
• RoHƽSWperoduectlaforer pthacaktinthgecmodaetesruifafilxo"fGp"roduct compliance with RoHS requirements.
HalogPebn-fFrereeeprpodauccktafogrepiasckainvgaiclaodbelesuffix "H"
0.071(1.8)
0.056(1.4)
SOT–23
MecRhoaHnSipcroadludct afotrapacking code suffix ”G”
CO0L.L04E0C(1T.0O) R
• EpoxHy a: lUoLg9e4n-fVre0eraptreoddfulacmt feorreptaacrkdianngt code suffix “H”
0.02₃4(0.6)
• Case : Molded plastic, SOD-123H
DEVICE MARKING AND ORDERING INFORMATION^,
• Terminals :Plated terminals, solderable per MIL-STD-750
Device_{Method 2026}
Marking
Shipping
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
y _{• Pola8ri5ty50:HInQdLicTa1ted by cathode ba1nHdD}
r _{• Moun85ti5n0gHPRoLsTit1ion : Any}
Y2
3000/Tape&Reel
3000/Tape&Reel
Dimensions in inches and (millimeters) 2
EMITTER
a _{• Weight : Approximated 0.011 gram}
in ^{MAXIMMUMAXRIAMTUINMGRSATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambienRt atetimnpgerature unless otherwise specifieSdy. mbol
Max
Unit
Single phase_Ch_oa_llelf_cw_toa_rv_-Ee_m, 6_it0_teH_rz_V, _ore_ltasi_gs_etive of inductive load.
For capacitiv_Ce_ol_lo_lea_cd_t,_od_r-e_Br_aa_ste_e c_Vu_or_lr_te_an_gt_eby 20%
VCEO
VCBO
25
V
40
V
Emitter-Ba_Rs_Ae_TV_INol_Gta_Sge
lim ^{Marking CodeCollector Current-continuoun}
SYMBOL FM12^V0-EMBOH FM130-MH FM⁵140-MH FM150^V-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12 ^IC 13 ¹⁵1⁰4⁰
1^m5 ^Adc 16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum^TR^HM^ES^RV^Mol^Ata^Lge^{CHARACTERISTICS}
e _{Maximum DC Blocking VoltagCe haracteristic}
VRRM
VRMS
VDC
20
30
14
21
20 ^Sym3^b0^ol
40
50
60
28
35
42
40^Max 50 ^Unit60
80
100
150
200 Volts
56
70
105
140 ^Volts
80
100
150
200 ^Volts
r _{Maximum AverTaogteaFl DorewvaicrdeRDeiscstiifpieadtiConurFreRn-t5 Board,(1) IO}
PD
1.0
Amps
Peak Forward S^Tur^Ag⁼e²⁵C^°u^Crrent 8.3 ms single half sine-wave
P _{superimposed oDn erartaetdeloaabdo(vJeED2E5°CCmethod)}
IFSM
225
mW
30
1.8
mW/°C
Amps
Typical Therma_Tl _hR_ee_rs_mis_ata_l n_Rc_ee_s(_iN_sto_at_ne_c2_e)_{,Junction to Ambien}R_t ΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Tem^Tp^oe^tr^aa^ltu^Dre^evR^ica^eng^De^issipation
TJ
R θJ A
556
-5^P5D to +125
°C/W ⁴⁰
120
-55 to +150
℃/W
PF
℃
Storage TempeAralutumreinRaaSnugbestrate,(2) TA=25°C
TSTG
300
mW- 65 to +175
℃
Derate above 25°C
CHARACTERISTICS
2.4
mW/°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum ForwTahrderVmoaltal gReeastis1ta.0nAceD,CJunction to AmbientVF
R θJ A 0.50 417
0°.C7/0W
0.85
0.9
0.92 Volts
Maximum Ave_Ora_pg_ee_rR_ate_inv_gers_Je_unC_cu_tr_ir_oe_nnt_aa_nt_{d S}@_toT_rA_a=_g2_e5_T℃_emperatIuRre
Rated DC Blocking Voltage
@T A=125℃
T j,T St g
-55 to +150
°C ^0.5
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
22001122--0076
WILLASWEILLELCATSREOLNEICCTCROORNPIC. CORP.