8050SLT1 Datasheet, PDF (1/3 Pages) WILLAS ELECTRONIC CORP – SOT-23 Plastic-Encapsulate Transistors

WILLAS
SO₁T_.0-_A2_S3_URP_Fl_Aa_Cs_Et_Mic_OU-E_NTn_Sc_Ca_HOp_Ts_Tu_KYla_Bt_Ae_RRT_IEr_Ra_Rn_Es_Ci_Ts_IFt_IEo_Rr_Ss_{-20V- 200V}
SOD-123+ PACKAGE
FM120-M
8050SLT1^THRU
FM1200-M
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
TRANSISTOR^be(N^tteP^rN^re)^{verse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
FEATURES _{• Low power loss, high efficiency.}
z _Pb-Free^{• H}_pⁱ_a^g_c^h_k^c_a^u_g^rr_e^en_is^{t c}_a^a_v^pa_a^b_ilⁱ_a^lit_b^y,_le^{low forward voltage drop.}
RoHS p^•ro^Hd^igu^hc^st ^ufo^rgr^ep^ca^ac^pk^ain^big^litc^y.ode suffix ”G”
• Guardring for overvoltage protection.
Halogen• Ufrletrea phirgohd-uspcet efodrspwaitcckhiinngg. code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
z Collecto_• r_LeC_au_dr_-r_fre_en_et_p: _aI_Crt=_s0_m._e5_eA_{t environmental standards of}
MIL-STD-19500 /228
MARKING: J^• 3^RY^{oHS product for packing code suffix "G"}
Halogen free product for packing code suffix "H"
Package outline
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
3. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MAXIMUM R^MA^eTI^cN^hG^aSⁿ(ⁱT^ca=^a2^l5^d℃^atu^anless otherwise noted)
Symbol^{• Epoxy : UL94-V0 rated flame reta}P^rda^araⁿm^t eter
V_CBO
V_CEO
• Case_C: M_ollo_el_cd_te_od_r-p_Bla_as_st_eic_V, _oS_lO_taD_g-_e123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector-Emitter Voltage
Method 2026
V_EBO
• Polar^Eity^m:^itI^tn^ed^r-ic^Ba^at^se^ed ^Vby^olc^taa^gth^eode band
Value
0.040(1.0)
Uni⁰t^.024(0.6)
40 ^{0.031(0.8) Typ.}
V ^{0.031(0.8) Typ.}
25
V
Dimen⁵sions in inches and (millime^Vters)
I_C
• Moun^Ctin^og^lleP^co^tos^rit^Cio^un^r:^reAⁿn^ty^-Continuous
0.5
A
P_C
• WeighCto:lAlepcptoror xDimisastipeadt0io.n011 gram
0.3
W
T_j
Ju_Mn_Act_Xio_In_MT_Ue_Mmp_Rer_Aa_Ttu_Ir_Ne_{GS AND ELECTRICAL CHARACTERISTICS} 150
℃
T_{stg Ratings at 25℃}St_ao_mra_bg_iee_nT_t e_tem_mp_pe_er_ra_att_uu_rr_ee_{unless otherwise specified.}
-55-150
℃
Single phase half wave, 60Hz, resistive of inductive load.
ELECT_FR_orIC_caA_paL_ciC_tivH_e A_loaR_dA_{, d}C_erT_atE_e R_cuI_rS_reT_ntIC_byS₂₀(T_%a=25℃ unless otherwise specified)
RATINGS
Marking^PC^ao^rd^ae^meter
Maximum Recurrent Peak Reverse Voltage
Colle_Mc_at_xo_imr-_ub_mas_Re_Mb_Sr_Ve_oa_ltk_ad_geown voltage
Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
Symbol
1^T2^{est co}1ⁿ3^ditions14
15 ^Min 16 ^Typ 18 ^Max10 ^Uni1^t15
120
VRRM
V_(BR)CVBROMS
20
30
40
I_C1=₄100μA₂,₁I_E=0 ₂₈
50
60
35 ⁴⁰ 42
80
100
150
200
56
70 ^V 105
140
VDC
20
30
40
V_(BR)CEO = I_C=1mA, I_B 0
IO
50
60
80
25
1.0
100
150
200
V
EmitPteera-kbFaosrwearbdrSeuargkedCouwrrnentv8o.3ltmags esingle half sine-waVve(BR)E_IB_FO_SM I_E=100μA, I_C=0
5
30
V
superimposed on rated load (JEDEC method)
Colle_Tc_yt_po_icr_alc_Tu_ht_e-o_rmff_alc_Ru_er_sr_ie_stn_ant_{ce (Note 2)}
I_CBORΘJA V= _CB=40 V , I_E 0
40
0.1 μA
Typical Junction Capacitance (Note 1)
CJ
120
ColleOcpteorratcinugtT-oemffpceurartruerenRt ange
I_CEOTJ
= V_CB= 20^-V⁵⁵, ^tI^o_E⁺¹0²⁵
-550t.o1+150 _μA
Storage Temperature Range
TSTG
- 65 to +175
Emitter cut-off current
I_EBO
= V_EB= 5V , I_C 0
0.1 μA
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Maximum Forward Voltage at 1.0A DC
H_FE(^V₁₎^F
V_CE= 1V, I _C= 5⁰0^.m⁵⁰A
1⁰2^.70⁰
0.8₃5 ₅₀
0.9
0.92
DC cMuarxreimnutmgAavinerage Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃ H_FE(2)
V_CE= 1V, I _C= 500mA
0.5
50 10
Colle^N1-c^OMt^To_eEr_aS-_s:e_urm_edit_at_te₁r_Ms_Ha_Ztu_ar_na_dt_aio_ppn_liev_do_relt_va_eg_rse_{e voltage of 4}V_.0C_VE_D(s_Cat_.)
Base²-^-e^Tm^hei^rt^mte^alr^Rs^ea^sit^su^tarⁿa^ct^eio^Frn^omvo^Julⁿta^ctg^ioe^{n to Ambient}
V_BE(sat)
I=500 mA, I_B= 50mA
I_C=500 mA, I_B= 50mA
0.6
V
1.2
V
Transition frequency
CLASSIFICATION OF h_FE(1)
Rank
Range^2012-06
f_T
L
120-200
V_CE= 6V, I _C= 20mA
f=30MHz
150
MHz
H
200^W-3^I5^L0^{LAS ELECTRONIC CO}
2012-0
WILLAS ELECTRONIC CORP.