2SK3541M3T5 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – SOT-723 Plastic-Encapsulate MOSFETS

WILLAS
S1.0OA TSU-7RF2A3CEPMlOaUsNtTicSC-EHOnTcTKaYpBsAuRRlaIEtReREMCTOIFSIERFSE-2T0SV- 200V
SOD-123+ PACKAGE
FM120-M+
6.0^T^H7^R^U
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
N_• -_LoC_oph_wtima_pn^iozn_wee_ebl_rolM^aorsO^ds,sS_hpF_iagE^cheT_{e. fficiency.}
F^•E^HA^igT^hU^cR^urE^reS^{nt capability, low forward voltage drop.}
• High surge capability.
•^zGua^Lrd^or^wing^ofⁿor^-ro^ev^seⁱr^sv^to^altⁿa^cg^ee protection.
•_zUltra_Fh_ai_sgh_t -_ss_wpe_ite_cd_hs_inw_gitc_sh_pin_eg_e. _d
••^zLSeilaicd^Lo-onfrweeep^viptoaaxlr^titaaslgmp^{eleaedntraeirv}nc^evhiri^{mpo,nammkeeetnas}tla^tslhisliistcaon^dndejauvrnⁱd^ccsetiooifn^{d.eal for portable equipment}
z^MIL-D^Sr^Tiv^De^-1c⁹i⁵r⁰c⁰u^/i²ts²⁸can be simple
•_zRHoaHloS_Pgeapnr_rof_ardelu_leectp_l fr_uoor_sdpueacct_iskfoinr_egp_aacsoc_{ykdiengsucfofidxe"Gsu"ffix "H"}
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-723
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
Mechanical data
A^•P^EP^pL^oI^xC^y A^{: U}T^LI⁹O^4-N^VS^{0 rated flame retardant}
0.040(1.0)
0.024(0.6)
•_InC_ta_es_re_fa:_cM_ino_glde_, d_Sp_wla_its_cti_hc,_inS_gOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
M_• A_PR_olaK_riI_tN_y G_{: In}:K_diN_{cated by cathode band}
Dimensions in inches and (millimeters)
• Mounting Position : Any
KN ^{• Weight : Approximated 0.011 gram}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For cap_Pa_bci_-t_Fiv_re_elo_ead_p,_ad_ce_kra_ate_gc_eur_ir_sen_at _vby_a2_il0_a%_ble
RoHS produ^Rc^At ^Tfo^INr^Gp^Sacking code suffi^Sx^YM”G^BO” ^{L FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Marking_HC_ao_ld_oe_{gen free product for packing}
Maximum Recurrent Peak Reverse Voltage
code suffix
VRRM
“¹²H²⁰”
13
30
14
40
15
50
16
60
18
10
115 120
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum^*D^AC^pB^rolo^tc^ek^cin^tig^onVo^dltⁱa^og^de^{e is included between} _V^th_D^e_C ^{gate a}2ⁿ0^{d the s}3^o0^{urce te}4^rm0 ^{inals t}5^o0^protect60^{the diode}80^against1^s0^t0^{atic elec}15^tr0^icity 200
Maximum^wA^hv^eerⁿag^the^eFo^pr^rw^oa^drd^ucR^teⁱc^stifⁱiⁿed^uC^su^er^.re^Un^st ^{e a protecti}I^oO^{n circuit when the fixed voltages are exceed}1^e.0^d.
Volts
Volts
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
s_Tu_yp_pe_icri_am_l p_TMo_hs_eae_rd_xmo_iamn_{l R}ra_uete_smd_isl_to_ara_nad_cte(J_inE_(ND_goE_tseC ₂₍m_T)e_ath₌od₂)_{5℃ unlessRΘoJtAherwise noted)}
40
Amps
℃/W
Typical Junction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
Parameter
TJ
-55_St_yo_m+1_b2_o5_l
Value ^{-55 to +150}
Units
℃
Storage_DT_re_am_inp_-e_sra_ot_uur_re_ceRa_vn_og_le_tage
Gate-sourc_Ce_HAv_Rol_Ata_Cg_Te_ERISTICS
TSTG
V_DS
- 65 to +175
30
℃
V
SYMBOL FM120-MH FM130^V-MGSH FM140-MH FM150-MH FM160-M^±H²⁰FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum_CoF_no_tr_iw_na_ur_od _uV_sol_dta_rg_ae_inat_c1_u.0_rrA_eD_ntC
VF
Maximu_Pm_oA_wve_er_rag_de_isR_se_ipv_aer_ts_ioe_nCurrent at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
Thermal resistance from junction to ambient
NOTES:
1- Measu^Jre^udⁿa^ct^t1^ioMⁿH^tZ^eman^pd^ea^rp^ap^tli^ue^rd^ereverse voltage of 4.0 VDC.
2- Therm^Sal^tR^oe^rasi^gst^ean^tc^ee^mF^pro^em^raJu^tunc^retion to Ambient
I_D^0.50
P_D
R_θJA
T_J
T_stg
0.70 _±100 0.85
0₀._.5₁₅
10
833
150
-55 ~+150
0.9 _mA 0.92
W
℃/W
Volts
mAmps
℃
* Pw≤10µs ,Duty cycle≤1%
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.